Abstract: An image sensor includes pixel electrodes, a control electrode, a photoelectric conversion film arranged on the pixel electrodes, a transparent electrode arranged on the photoelectric conversion film, an insulating layer arranged on at least a portion of a top surface of the transparent electrode, and a connection layer that electrically connects the control electrode to the transparent electrode. The connection layer is in contact with at least one side surface of the transparent electrode. A side surface of the insulating layer, the at least one side surface of the transparent electrode, and a side surface of the photoelectric conversion film are aligned with each other.

Abstract: An imaging device includes at least one first pixel electrode, at least one second pixel electrode, a photoelectric converter continuously covering upper surfaces of the at least one first pixel electrode and the at least one second pixel electrode, a first counter electrode facing the at least one first pixel electrode, a second counter electrode facing the at least one second pixel electrode, and a sealing layer continuously covering upper surfaces of the first and second counter electrodes. In a plan view, a first portion of an upper surface of the photoelectric converter in an interelectrode region between the first counter electrode and the second counter electrode is more depressed than a second portion of the upper surface of the photoelectric converter in an overlap region overlapping the first counter electrode or the second counter electrode. The sealing layer is in contact with the photoelectric converter in the interelectrode region.

Abstract: An imaging device includes a first photoelectric converter, a first capacitive element, a second photoelectric converter, and a second capacitive element. The first photoelectric converter converts light having a wavelength in a first wavelength region into first electric charge. The first capacitive element accumulates the first electric charge. The first capacitive element includes a first electrode, a second electrode, and a first dielectric. The second photoelectric converter is arranged at a different height from the first photoelectric converter in a thickness direction of the imaging device. The second photoelectric converter converts light having a wavelength in a second wavelength region into second electric charge. The second capacitive element accumulates the second electric charge. The second capacitive element includes a third electrode, a fourth electrode, and a second dielectric.

Abstract: An imaging device includes a first photoelectric converter, a second photoelectric converter, and a first capacitive element. The first photoelectric converter converts light having a wavelength in a first wavelength region into first electric charge. The second photoelectric converter converts light having a wavelength in a second wavelength region into second electric charge. The second photoelectric converter is arranged at a different height from the first photoelectric converter in a thickness direction of the imaging device. The first capacitive element accumulates the first electric charge and the second electric charge.

Abstract: An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.

Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer, and a charge storage region. The photoelectric conversion layer is located between the first electrode and the second electrode. The charge storage region is electrically connected to the first electrode. An area of the charge storage region in plan view is smaller than or equal to 0.01 µm2.

Abstract: An imaging device includes: a photoelectric conversion film; a first electrode located above the photoelectric conversion film; a second electrode; a plug coupled to the second electrode; a protective film located above the second electrode; and a wiring line that electrically couples the first electrode to the second electrode. The protective film overlaps the entire plug and does not overlap the photoelectric conversion film in plan view. The second electrode includes a non-overlapping portion that does not overlap the protective film in plan view, and the wiring line is coupled to the non-overlapping portion of the second electrode.

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

Abstract: An imaging device includes at least one first pixel electrode, at least one second pixel electrode, a photoelectric converter continuously covering upper surfaces of the at least one first pixel electrode and the at least one second pixel electrode, a first counter electrode facing the at least one first pixel electrode, a second counter electrode facing the at least one second pixel electrode, and a sealing layer continuously covering upper surfaces of the first and second counter electrodes. In a plan view, a first portion of an upper surface of the photoelectric converter in an interelectrode region between the first counter electrode and the second counter electrode is more depressed than a second portion of the upper surface of the photoelectric converter in an overlap region overlapping the first counter electrode or the second counter electrode. The sealing layer is in contact with the photoelectric converter in the interelectrode region.

Abstract: An imaging device includes: a first pixel array including a first photoelectric converter and first pixel electrodes connected to the first photoelectric converter; and a second pixel array including a second photoelectric converter and second pixel electrodes connected to the second photoelectric converter. The first pixel array and the second pixel array are stacked one on another. In a plan view, an area of an overlapping region defined by overlapping between the first pixel electrodes and a corresponding second pixel electrode of the second pixel electrodes is smaller than an area of a remaining region obtained by excluding the overlapping region from the corresponding second pixel electrode.

Abstract: An imaging device includes a pixel section and a peripheral circuitry section provided around the pixel section. The pixel section includes: a photoelectric conversion film; a top electrode located above the photoelectric conversion film; bottom electrodes that face the top electrode, with the photoelectric conversion film being disposed between the top electrode and the bottom electrodes; and a first light-shielding film that overlaps part of the photoelectric conversion film in a plan view and that is electrically connected to the top electrode. The first light-shielding film has electrical conductivity. The peripheral circuitry section includes peripheral circuitry and a second light-shielding film that overlaps at least part of the peripheral circuitry in the plan view. The first light-shielding film and the second light-shielding film are separated from each other.

Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

Abstract: A photoelectric conversion device includes: a substrate; a photodetection film including a first surface facing the substrate and a second surface opposing the first surface; first electrodes provided between the substrate and the photodetection film; a second electrode provided between the substrate and the photodetection film and including a first portion overlapped with the first surface and a second portion not overlapped therewith when viewed from a normal direction of the substrate; a third electrode provided on the second surface of the photodetection film and including a third surface facing the second surface; wiring allowing for conduction between the second and third electrodes; and a first conductive plug connected with the first portion and extending toward the substrate. Material of the first conductive plug differs from that of the second electrode. The wiring is in contact with a side surface of the photodetection film and the second portion.

Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer that is arranged between the first electrode and the second electrode and converts light to charge, and an electron blocking layer that is arranged between the first electrode and the photoelectric conversion layer and suppresses movement of electrons from the first electrode to the photoelectric conversion layer. The electron blocking layer contains carbon and an oxide of nickel. The carbon concentration in the electron blocking layer is 0.1 atom % or more and 1.3 atom % or less.

Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer that is arranged between the first electrode and the second electrode, and an electron blocking layer that suppresses movement of electrons from the first electrode to the photoelectric conversion layer. The electron blocking layer contains carbon and an oxide of chromium and is arranged between the first electrode and the photoelectric conversion layer.

Abstract: An image sensor includes pixel electrodes, a control electrode, a photoelectric conversion film arranged on the pixel electrodes, a transparent electrode arranged on the photoelectric conversion film, an insulating layer arranged on at least a portion of a top surface of the transparent electrode, and a connection layer that electrically connects the control electrode to the transparent electrode. The connection layer is in contact with at least one side surface of the transparent electrode. A side surface of the insulating layer, the at least one side surface of the transparent electrode, and a side surface of the photoelectric conversion film are aligned with each other.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.