Abstract: A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R2 and R3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R2 and R3 bond, or R1 and either R2 or R3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R1 and either R2 or R3 bond.

Abstract: A composition includes: a metal compound; a compound having an oxymethylene structure; and a solvent. The metal compound is a metal salt or a metal complex. The compound having an oxymethylene structure is capable of generating an aldehyde structure when degraded through heating. A metal atom contained in the metal compound preferably belongs to any one of periods 3 to 7 among groups 2 to 14 in a periodic table.

Abstract: A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R2 and R3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R2 and R3 bond, or le and either R2 or R3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which le and either R2 or R3 bond.

Abstract: A film-forming composition includes: a metal compound; a nitrogen-containing organic compound; and a solvent. The nitrogen-containing organic compound is: a first compound including a nitrogen atom, an aliphatic hydrocarbon group, and at least two hydroxy groups; a second compound including a nitrogen-containing aromatic heterocycle and at least one hydroxy group; or a mixture thereof. A method of forming a resist pattern includes applying the film-forming composition directly or indirectly on a substrate to form a resist underlayer film. An organic-resist-film-forming composition is applied directly or indirectly on the resist underlayer film to form an organic resist film. The organic resist film is exposed to a radioactive ray. The organic resist film exposed is developed.

Abstract: A composition includes: a cobalt-containing compound not containing a cobalt-carbon bond; and a solvent. The composition is capable of forming a coating film. The solvent preferably includes an organic solvent, and the organic solvent preferably includes an alcohol solvent. A method of producing a substrate includes applying the composition directly or indirectly on a substrate to form a coating film.

Abstract: A patterned substrate-producing method includes applying a surface treatment agent on a surface layer of a substrate. The surface layer includes at least one metal element. A resist composition is applied on a surface of the surface layer to provide a resist film on the surface. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film exposed is developed to form a resist pattern. The substrate is etched using the resist pattern as a mask. The surface treatment agent includes: a polymer including a group including a polar group at at least one end of a main chain of the polymer; and a solvent.

Abstract: A resist pattern-forming method includes treating a surface layer of a substrate with an ultraviolet ray, plasma, water, an alkali, an acid, hydrogen peroxide, ozone, or a combination thereof. The surface layer includes at least one metal element. A resist composition is applied on a surface of the surface layer to provide a resist film directly or indirectly on the surface. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film exposed is developed. The at least one metal element preferably belongs to period 3 to period 7 of group 3 to group 15 in periodic table.

Abstract: A metal-containing film-forming composition for lithography with an extreme ultraviolet ray or electron beam includes a compound and a solvent. The compound includes a metal element and an oxygen atom, and further includes a metal-oxygen covalent bond. The metal element in the compound belongs to period 3 to period 7 of group 3 to group 15 in periodic table. The solvent includes a first solvent component having a normal boiling point of less than 160° C. and a second solvent component having a normal boiling point of no less than 160° C. and less than 400° C. The solvent includes an alcohol solvent. A percentage content of the alcohol solvent in the solvent is no less than 30% by mass.

Abstract: Provided are: a composition for forming a silicon-containing film for EUV lithography capable of forming a silicon-containing film that is superior in an outgas-inhibiting property and enables formation of a resist pattern with a superior collapse-inhibiting property and a favorable configuration; a silicon-containing film for EUV lithography; and a pattern-forming method. The composition for forming a silicon-containing film for EUV lithography contains: a polysiloxane; a compound having an onium cation and a sulfonate anion; and a solvent, in which a sum of atomic masses of the atoms constituting the sulfonate anion is no less than 240, the sulfonate anion has a sulfonate group, and a carbon atom adjacent to the sulfonate group, and a fluorine atom does not bond to the carbon atom.