Abstract: The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.

Abstract: The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.

Abstract: There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.

Abstract: A substrate processing apparatus includes a processing vessel, a substrate holder, arranged in the processing vessel, for holding a target substrate, a rotary member coupled to the substrate holder and having a hollow portion, at an intermediate portion thereof in an axial direction, with a larger outer diameter than that of a portion thereof coupled to the substrate holder, a bearing portion for rotatably supporting the rotary member, a driving portion for supplying a rotational force to the rotary member, a heating portion for heating the target substrate through the substrate holder, and a cooling portion, arranged in the vicinity of the hollow portion of the rotary member through a small gap, for cooling the hollow portion.

Abstract: A wafer having a recess with an aspect ratio of 0.5 or above on a surface to be processed is placed on a holder provided within a process chamber. A process gas consisting of a mixture of a material gas of SiH.sub.4 and a carrier gas of H.sub.2 is uniformly supplied to the surface of the wafer vertically. The pressure within the process chamber is set at 1 Torr or above. The temperature of the surface to be processed of the wafer is set at 600.degree. C. to 800.degree. C. Under these conditions, a polysilicon film is formed in the recess by a vapor phase growth method. During the formation of the film, the wafer is rotated at 500 rpm or above by an output of a motor via a holder. Thereby, a high film formation rate and a good step coverage can be made compatible.

Abstract: A simulation method for performing a simulation with respect to a trace object that an event occurs depending on a probability in a domain to be analyzed. The simulation method includes the step of dividing a flowing field into cells serving as domains to be analyzed, the step of arranging molecules serving as the target object in the cells, the step of performing the simulation such that the molecules are moved in the cells and the number of stickings or a sticking amount occurring on a wall surface or a film portion as the result of the movement larger than the number of times of the event or a change amount led by the probability, and the step of outputting, as a simulation result, a film profile obtained as the result of the simulation.

Abstract: A substrate such as a semiconductor wafer is transferred to a plurality of process chambers so as to perform prescribed processes. An inspection chamber is air-tightly connected to each of the process chambers. The inspection chamber is provided with a handler which loads and unloads the substrate. A gate valve is disposed between each process chamber and the inspection chamber. By this gate valve, each chamber is air-tightly closed.

Abstract: A substrate such as a semiconductor wafer is transferred to a plurality of process chambers so as to perform prescribed processes. An inspection chamber is air-tightly connected to each of the process chambers. The inspection chamber is provided with a handler which loads and unloads the substrate. A gate valve is disposed between each process chamber and the inspection chamber. By this gate valve, each chamber is air-tightly closed.

Abstract: A vapor-phase deposition apparatus comprises a substrate-supporting unit for supporting a substrate, a heater for heating the substrate-supporting unit, and a gas-supplying unit for supplying gas for forming a thin film on the substrate supported by the substrate-supporting unit. The substrate-supporting unit includes a first member to be heated to a predetermined temperature by the heater, a second member for supporting a peripheral part of the substrate, and a support member for supporting the second member on the first member and located outside a periphery of the substrate.

Abstract: A vapor-phase deposition apparatus comprises a substrate-supporting unit for supporting a substrate, a heater for heating the substrate-supporting unit, and a gas-supplying unit for supplying gas for forming a thin film on the substrate supported by the substrate-supporting unit. The substrate-supporting unit includes a first member to be heated to a predetermined temperature by the heater, a second member for supporting a peripheral part of the substrate, and a support member for supporting the second member on the first member and located outside a periphery of the substrate.

Abstract: A vapor growth apparatus has a susceptor which rotates in a water cooled reaction tube with holding semiconductor susbstrates thereon. A heater is provided in order to heat the susceptor and to maintain a predetermined temperature. This heater is comprised of an inner heater, which heats the inner part of the susceptor, and a peripheral heater, which heats the peripheral part of the susceptor. The peripheral heater is made thicker than the inner heater. In addition, these inner and peripheral heaters are connected in parallel with each other. So, the peripheral heater can generate more heat than the inner heater so as to compensate the temperature decrease in the peripheral part of the susceptor, without loosing the mechanical strength of the whole heater.

Abstract: An argon (Ar.sup.+) laser has a resonator. A reaction chamber is integrally formed in the resonator. A voltage is applied to electrodes, which discharge electricity to excite argon atoms in the resonator to produce a laser beam. The laser beam is continuously oscillated between total reflection mirrors disposed at opposite ends of the resonator. A substrate is disposed in the reaction chamber into which a material gas is introduced. The material gas absorbs the laser beam, to decompose and deposit as a thin film over the substrate.