Patents by Inventor Yuuzou Oohirabaru
Yuuzou Oohirabaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10727088Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.Type: GrantFiled: October 4, 2016Date of Patent: July 28, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
-
Patent number: 10559481Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.Type: GrantFiled: February 29, 2016Date of Patent: February 11, 2020Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
-
Patent number: 10522331Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: GrantFiled: October 25, 2016Date of Patent: December 31, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
-
Patent number: 9831096Abstract: A plasma processing method including disposing a wafer to be processed on a sample stage disposed in a processing chamber within a vacuum vessel, supplying an electric field using first high frequency power for plasma forming into the processing chamber and forming plasma, and supplying second high frequency power for bias potential forming to electrodes disposed within the sample stage and processing a film on a top surface of the wafer. At least the first or second high frequency power repeats a change of becoming a plurality of predetermined amplitudes for predetermined periods with a predetermined repetition period. In the processing of the film, supply of the high frequency power is changed by finally increasing a predetermined magnitude of amplitude among the repetition period, ratio of the period, and amplitude of the at least the first or second high frequency power, or first decreasing a predetermined magnitude of the amplitude.Type: GrantFiled: January 14, 2016Date of Patent: November 28, 2017Assignee: Hitachi High-Technologies CorporationInventors: Hiromitsu Terauchi, Tsutomu Iida, Yuuzou Oohirabaru
-
Publication number: 20170040143Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: ApplicationFiled: October 25, 2016Publication date: February 9, 2017Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
-
Publication number: 20170025289Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.Type: ApplicationFiled: October 4, 2016Publication date: January 26, 2017Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
-
Patent number: 9514967Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: GrantFiled: January 16, 2013Date of Patent: December 6, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
-
Publication number: 20160211153Abstract: A plasma processing method including disposing a wafer to be processed on a sample stage disposed in a processing chamber within a vacuum vessel, supplying an electric field using first high frequency power for plasma forming into the processing chamber and forming plasma, and supplying second high frequency power for bias potential forming to electrodes disposed within the sample stage and processing a film on a top surface of the wafer. At least the first or second high frequency power repeats a change of becoming a plurality of predetermined amplitudes for predetermined periods with a predetermined repetition period. In the processing of the film, supply of the high frequency power is changed by finally increasing a predetermined magnitude of amplitude among the repetition period, ratio of the period, and amplitude of the at least the first or second high frequency power, or first decreasing a predetermined magnitude of the amplitude.Type: ApplicationFiled: January 14, 2016Publication date: July 21, 2016Inventors: Hiromitsu TERAUCHI, Tsutomu IIDA, Yuuzou OOHIRABARU
-
Publication number: 20160181131Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.Type: ApplicationFiled: February 29, 2016Publication date: June 23, 2016Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
-
Patent number: 9305803Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.Type: GrantFiled: July 19, 2011Date of Patent: April 5, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
-
Publication number: 20140057445Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.Type: ApplicationFiled: January 17, 2013Publication date: February 27, 2014Applicant: Hitachi High-Technologies CorporationInventors: Michikazu MORIMOTO, Yasuo OHGOSHI, Yuuzou OOHIRABARU, Tetsuo ONO
-
Publication number: 20140020831Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: ApplicationFiled: January 16, 2013Publication date: January 23, 2014Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo OHGOSHI, Michikazu MORIMOTO, Yuuzou OOHIRABARU, Tetsuo ONO
-
Publication number: 20120252219Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.Type: ApplicationFiled: July 19, 2011Publication date: October 4, 2012Inventors: Michikazu MORIMOTO, Yasuo OHGOSHI, Yuuzou OOHIRABARU, Tetsuo ONO
-
Publication number: 20100207790Abstract: The invention provides an analog input and output circuit and a vacuum processing apparatus capable of automatically performing the correction of all analog inputs and outputs via a single reference voltage adjustment, thereby solving the prior art problem of requiring a different correction value for each channel for accurately controlling the analog input and output due to the difference in the on resistances of switches for respective channels of an analog multiplexer.Type: ApplicationFiled: March 3, 2009Publication date: August 19, 2010Inventors: Koji Toyota, Koichi Yamamoto, Yuuzou Oohirabaru
-
Patent number: 7585383Abstract: The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof.Type: GrantFiled: August 30, 2004Date of Patent: September 8, 2009Assignee: Hitachi High-Technologies CorporationInventors: Yuuzou Oohirabaru, Akira Ueda
-
Patent number: 7353076Abstract: The invention provides a semiconductor processing apparatus having a high throughput capable of appropriately coping with the positional displacement that may occur during transfer of the wafer after correcting the position thereof, without slowing down the transfer speed of the wafer. A position correction quantity of the wafer with respect to a vacuum robot is computed based on the outputs of a ? axis sensor for detecting the interception angle of the wafer during rotation of the vacuum robot and an R axis sensor for detecting the interception distance of the wafer during expansion and contraction of the vacuum robot. If the position correction quantity exceeds a predetermined standard value, an operation to change the position data is performed, and if the distance data obtained based on the outputs from the ? axis sensor and the R axis sensor exceeds a predetermined permissible value, it is determined that a displacement error has occurred and the operation is stopped.Type: GrantFiled: February 27, 2006Date of Patent: April 1, 2008Assignee: Hitachi High-Technologies CorporationInventors: Nobuo Nagayasu, Hideki Kihara, Michinori Kawaguchi, Yuuzou Oohirabaru
-
Publication number: 20070100488Abstract: The invention provides a semiconductor processing apparatus having a high throughput capable of appropriately coping with the positional displacement that may occur during transfer of the wafer after correcting the position thereof, without slowing down the transfer speed of the wafer. A position correction quantity of the wafer with respect to a vacuum robot is computed based on the outputs of a ? axis sensor for detecting the interception angle of the wafer during rotation of the vacuum robot and an R axis sensor for detecting the interception distance of the wafer during expansion and contraction of the vacuum robot. If the position correction quantity exceeds a predetermined standard value, an operation to change the position data is performed, and if the distance data obtained based on the outputs from the ? axis sensor and the R axis sensor exceeds a predetermined permissible value, it is determined that a displacement error has occurred and the operation is stopped.Type: ApplicationFiled: February 27, 2006Publication date: May 3, 2007Inventors: Nobuo Nagayasu, Hideki Kihara, Michinori Kawaguchi, Yuuzou Oohirabaru
-
Publication number: 20050193948Abstract: The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof.Type: ApplicationFiled: August 30, 2004Publication date: September 8, 2005Inventors: Yuuzou Oohirabaru, Akira Ueda