Patents by Inventor Yuval Saado

Yuval Saado has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11550101
    Abstract: An integrated photonic device is provided with a photonic crystal lower cladding on a semiconductor substrate.
    Type: Grant
    Filed: October 25, 2021
    Date of Patent: January 10, 2023
    Assignee: Micron Technology, Inc.
    Inventor: Yuval Saado
  • Publication number: 20220043206
    Abstract: An integrated photonic device is provided with a photonic crystal lower cladding on a semiconductor substrate.
    Type: Application
    Filed: October 25, 2021
    Publication date: February 10, 2022
    Inventor: Yuval Saado
  • Patent number: 11156775
    Abstract: An integrated photonic device is provided with a photonic crystal lower cladding on a semiconductor substrate.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: October 26, 2021
    Assignee: Micron Technology, Inc.
    Inventor: Yuval Saado
  • Publication number: 20200341195
    Abstract: An integrated photonic device is provided with a photonic crystal lower cladding on a semiconductor substrate.
    Type: Application
    Filed: July 10, 2020
    Publication date: October 29, 2020
    Inventor: Yuval Saado
  • Patent number: 10718901
    Abstract: An integrated photonic device is provided with a photonic crystal lower cladding on a semiconductor substrate.
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: July 21, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Yuval Saado
  • Patent number: 9099581
    Abstract: A photonic integrated circuit (I/C) includes a focusing sidewall or in-plane surface that redirects and focuses light from a waveguide to a photodetector structure. The focusing includes redirecting an optical signal to a width smaller than a width of the waveguide. The focusing of the light allows the photodetector structure to be outside a waveguide defined by parallel oxide structures. With the photodetector structure outside the waveguide, the contacts can be placed closer together, which reduces contact resistance.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: August 4, 2015
    Assignee: Intel Corporation
    Inventors: Yun-Chung Neil Na, Yuval Saado, Yimin Kang
  • Patent number: 9024402
    Abstract: Devices comprised of end-on waveguide-coupled photodetectors are described. In embodiments of the invention, the photodetectors are avalanche photodiodes coupled end-on to a waveguide. The waveguide includes an insulating trench proximate to the coupled photodetector. In embodiments of the invention, the avalanche photodiodes are silicon/germanium avalanche photodiodes.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: May 5, 2015
    Assignee: Intel Corporation
    Inventors: Yimin Kang, Zhihong Connie Huang, Han-Din Dean Liu, Yuval Saado, Yun-Chung Neil Na
  • Publication number: 20150003775
    Abstract: An integrated photonic device is provided with a photonic crystal lower cladding on a semiconductor substrate.
    Type: Application
    Filed: June 26, 2013
    Publication date: January 1, 2015
    Inventor: Yuval Saado
  • Publication number: 20140231946
    Abstract: Devices comprised of end-on waveguide-coupled photodetectors are described. in embodiments of the invention, the pbotodetectors are avalanche photodiodes coupled end-on to a waveguide. The waveguide comprises an insulating trench proximate to the coupled photodetector. In embodiments of the invention, the avalanche photodiodes are silicin/germanium avalanche photodiodes.
    Type: Application
    Filed: November 2, 2011
    Publication date: August 21, 2014
    Inventors: Yimin Kang, Zhihong Connie Huang, Han-Din Dean Liu, Yuval Saado, Yun-Chung Neil Na