Abstract: A wafer inspection system employing reflected bright-field microscopy can be adapted with polarizing optics and a mirror to detect polarization-altering defects (such as micropipes) in semiconductor wafers. The polarization-altering defects can be located within the bulk of the semiconductor wafer and can be imaged as bright features on a darker background. The system can also be used for conventional bright-field inspection of non-polarization-altering defects such as contaminants and inclusions.

Abstract: An illumination module may include a laser diode array configured to emit laser radiation; a phosphor illumination unit that is configured to emit phosphor radiation following an exposure to the laser radiation; a multiple-angle illumination unit; and intermediate optics that is configured to convey the phosphor radiation to the multiple-angle illumination unit. The multiple-angle illumination unit is configured to receive the phosphor radiation and to dark field illuminate a region of a sample wafer from multiple angles during inspection of the wafer.