Abstract: The present invention discloses a method for adsorption and immobilization of a heavy metal ion in water and a method for preparing a geopolymer cementitious material, and belongs to the fields of environmental protection engineering and materials engineering. The method for adsorption and immobilization of a heavy metal ion in water includes the following steps: adsorbing a heavy metal ion in water using carbonized micropowder; mixing the carbonized micropowder after adsorbing the heavy metal ion with one or more of granulated blast furnace slag, gypsum, and steel slag to obtain a solid material; and mixing the solid material with an alkaline activator, followed by curing and molding. According to the present invention, a solidification amount of heavy metals can be significantly increased. Meanwhile, a prepared geopolymer has excellent mechanical performance, can be used as a low-cost green building material or for fields such as solid waste landfill.

Abstract: A microelectronic device comprises lateral contact structures overlying a source structure and comprising conductive material, a cap material overlying the lateral contact structures and comprising implant regions therein, a stack structure overlying the cap material and comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers, and pillars vertically extending through the stack structure and into the source structure. The pillars individually comprise semiconductive channel material in physical contact with the lateral contact structures. The microelectronic device comprises filled slot structures vertically extending at least through the stack structure and the cap material. The filled slot structures are positioned within horizontal areas of the implant regions of the cap material. Related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.

Abstract: A microelectronic device comprises lateral contact structures overlying a source structure and comprising conductive material, a cap material overlying the lateral contact structures and comprising implant regions therein, a stack structure overlying the cap material and comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers, and pillars vertically extending through the stack structure and into the source structure. The pillars individually comprise semiconductive channel material in physical contact with the lateral contact structures. The microelectronic device comprises filled slot structures vertically extending at least through the stack structure and the cap material. The filled slot structures are positioned within horizontal areas of the implant regions of the cap material. Related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.

Abstract: A microelectronic device includes a boron-doped semiconductor material, a stack structure, slot structures, and cell pillar structures. The boron-doped semiconductor material is vertically above a lateral contact material. The stack structure is vertically above the boron-doped semiconductor material and includes blocks horizontally extending in parallel in a first direction and individually having tiers respectively including conductive material and insulative material vertically neighboring the conductive material. The slot structures vertically extend through the stack structure, the boron-doped semiconductor material, and the lateral contact material. The slot structures horizontally alternate with the blocks of the stack structure in a second direction orthogonal to the first direction.

Abstract: A quantum chip and a quantum computing device are applied to the field of quantum computing technologies. The quantum chip includes a first substrate and a second substrate arranged oppositely, where a reading cavity is formed on a side surface of the first substrate facing the second substrate, a quantum bit corresponding to the reading cavity is disposed on a side surface of the second substrate facing the first substrate, and the reading cavity and the quantum bit are mutually coupled by forming a capacitor therebetween.

Abstract: Methods, systems, and devices for support structures for tier deflection in a memory system are described. The memory system may include a word line contact that extends through a stack of materials and lands on a tier of a word line. The word line contact may be between four support structures that form a diamond around the word line contact. Two support structures that form opposite vertices of the diamond may align centrally with the word line contact in a lateral direction and two other support structures that form opposite vertices of the diamond may align centrally with the word line contact in a longitudinal direction.

Abstract: A microelectronic device comprises lateral contact structures overlying a source structure and comprising conductive material, a cap material overlying the lateral contact structures and comprising implant regions therein, a stack structure overlying the cap material and comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers, and pillars vertically extending through the stack structure and into the source structure. The pillars individually comprise semiconductive channel material in physical contact with the lateral contact structures. The microelectronic device comprises filled slot structures vertically extending at least through the stack structure and the cap material. The filled slot structures are positioned within horizontal areas of the implant regions of the cap material. Related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.

Abstract: Disclosed are a lightweight conductive mortar material, a preparation method therefor and use thereof. The lightweight conductive mortar material includes the following components in parts by weight: 100 parts of cement, 25 parts to 60 parts of a conductive porous lightweight aggregate loaded with a modified agar gel, and 30 parts to 45 parts of water.

Abstract: Disclosed are a lightweight conductive mortar material, a preparation method therefor and use thereof. The lightweight conductive mortar material includes the following components in parts by weight: 100 parts of cement, 25 parts to 60 parts of a conductive porous lightweight aggregate loaded with a modified agar gel, and 30 parts to 45 parts of water.