Abstract: Embodiments of the disclosure generally relate to methods for filling substrate features. Particularly, embodiments of the disclosure are directed to methods improving lateral gap fill. In one embodiment, a method includes positioning a substrate having a feature formed therein within a processing chamber, the feature comprising a vertical trench and one or more lateral trenches extending from the vertical trench; exposing the substrate to at least one pretreatment precursor to pretreat the substrate, wherein pretreating the substrate increases a hydrophobicity of one or more surfaces of the feature in the substrate; and depositing a gapfill material on the substrate and the feature formed therein to gapfill the vertical trench and the one or more lateral trenches of the feature.

Abstract: Exemplary processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate including a plurality of layers of a silicon-containing material may be housed within the processing region. Adjacent layers of the silicon-containing material may be vertically spaced apart to define a plurality of lateral gaps. One or more features may extend through the plurality of layers of the silicon-containing material and into the substrate. The methods may include depositing a flowable oxygen-containing material on the substrate in the plurality of lateral gaps and in the one or more features extending into the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the hydrogen-containing precursor while applying a bias power.

Abstract: A system for storing wafer is provided. The system includes a wafer box, an installing member, a detection tube, a control unit, and a detection unit. The wafer box includes an outlet connector and an inlet connector extending a wall of the wafer box. The installing member covers the wafer box to form a sealed receiving room. Two ends of the detection tube are coupled to the outlet connector and the inlet connector. The control unit are configured to output a first control signal to the detection unit. The detection unit includes a first sensor arranged in the detection tube. The first sensor is configured to detect a property of gas to obtain data of an environment where the wafer is stored upon the first control signal. A related system for monitoring pollution of wafer is also provided.

Abstract: The invention discloses a method of preventing and treating osteoporosis. The method comprises a step of enhancing osteoblast differentiation and inhibiting osteoclast differentiation by administering a pharmaceutically effective amount of a composition comprising 6-hydroxy flavone compound or 7-methoxy flavone compound, or at least one pharmaceutically acceptable salt thereof to a subject.

Abstract: The invention develops a high-throughput screening method based on charcoal-sorbent peptide binding assay (CPBA) which does not need a solid phase and can simultaneously detect plural target biomolecules in a sample. The method of the invention can achieve high-throughput screening of biomolecules (such as antibodies and antigens) with a molecular weight of more than 10 KD.

Abstract: The invention develops a high-throughput screening method based on charcoal-sorbent peptide binding assay (CPBA) which does not need a solid phase and can simultaneously detect plural target biomolecules in a sample. The method of the invention can achieve high-throughput screening of biomolecules (such as antibodies and antigens) with a molecular weight of more than 10 KD.

Abstract: A method for modifying a thiol group is provided. The method includes: providing a first material containing at least one sulfhydryl group; providing a second material containing at least one thiourea group; and reacting the first material with the second material in the presence of copper (II) ions to quickly form a disulfide bond between the sulfhydryl group and the thiourea group, wherein the disulfide bond can be easily reduced.