Abstract: A plasma processing system (system) for processing a substrate is provided. The system includes a gas distribution system and a gas flow control assembly coupled to the gas distribution system. The gas flow control assembly is configured to control the input gases provided by the gas distribution system. The plasma processing system also includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate. The flow rate of the first set of gases is different from a flow rate of the second set of gases.

Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system. The plasma processing system further includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate.

Abstract: A method for etching a barrier material on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system, wherein the substrate includes the barrier material and a low-k material, and wherein the barrier material and a low-k material are configured to be exposed to a plasma. The method also includes flowing an etchant gas mixture, including CH3F from about 4% to about 8% of a plasma gas flow, into the plasma processing chamber, wherein the etchant gas mixture is configured to etch the barrier material at a first etch rate, the etchant gas mixture is configured to etch the low-k material at a second etch rate, wherein the first etch rate is substantially greater than the second etch rate. The method further includes striking a plasma from the etchant source gas; and etching the barrier layer and the low-k layer.

Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system. The plasma processing system further includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate.