Patents by Inventor Yuxia Sun

Yuxia Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11029237
    Abstract: A sediment pressure-holding transfer device developed based on abyssal sediment fidelity sampler is disclosed, which uses a vacuum pump to discharge a gas in the device, uses a high-pressure pump as a power source to perform a pressurization process, uses gravity of a sample to perform a first transfer, and uses a high-pressure impurity pump and a safety valve to perform a second transfer of a sample mixture, in its structure, a high-pressure-resistant and corrosion-resistant material is used as a main material of the device, the device mainly comprises a mechanical system and a hydraulic system, the mechanical system is used as a main frame of the device and is a basis for ensuring operation of the device; the hydraulic system is used as a core of the device and is a key to ensure success of sediment transfer.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: June 8, 2021
    Assignee: Zhejiang University
    Inventors: Jiawang Chen, Jing Xiao, Jiasong Fang, Weitao He, Hao Wang, Yue Huang, Wei Wang, Yuxia Sun
  • Publication number: 20200355579
    Abstract: A sediment pressure-holding transfer device developed based on abyssal sediment fidelity sampler is disclosed, which uses a vacuum pump to discharge a gas in the device, uses a high-pressure pump as a power source to perform a pressurization process, uses gravity of a sample to perform a first transfer, and uses a high-pressure impurity pump and a safety valve to perform a second transfer of a sample mixture, in its structure, a high-pressure-resistant and corrosion-resistant material is used as a main material of the device, the device mainly comprises a mechanical system and a hydraulic system, the mechanical system is used as a main frame of the device and is a basis for ensuring operation of the device; the hydraulic system is used as a core of the device and is a key to ensure success of sediment transfer.
    Type: Application
    Filed: May 9, 2019
    Publication date: November 12, 2020
    Inventors: Jiawang CHEN, Jing XIAO, Jiasong FANG, Weitao HE, Hao WANG, Yue HUANG, Wei WANG, Yuxia SUN
  • Publication number: 20170043399
    Abstract: A method for preparing a porous metal material comprises: in a vacuum environment, volatilizing one or more volatile alloy elements in an alloy, so as to finally form a porous pure metal or a porous alloy. The process method can be widely applied in the fields such as aeronautics and astronautics, atomic energy, electrochemistry, petrochemical industry, metallurgy, machinery, medicines, environmental protection or construction.
    Type: Application
    Filed: October 8, 2014
    Publication date: February 16, 2017
    Inventors: YIbin REN, Yuxia SUN, Keshen XIAO, Ke YANG
  • Patent number: 7361522
    Abstract: A heterosystem of two different materials, mismatched in terms of lattice constant or symmetry, may be formed with reduced defects by using a two step approach proposed in this invention. Nanowires are first grown on a semiconductor substrate, and then a thin film of the disparate crystallographically inconsistent material is grown from the nanowires through a two dimensional growth mode. The nanowire material may better match crystallographically to both the substrate and the grown film, or is simply the same as the grown film.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: April 22, 2008
    Assignee: Intel Corporation
    Inventors: Yongqian J. Wang, Yuxia Sun
  • Publication number: 20070238211
    Abstract: A heterosystem of two different materials, mismatched in terms of lattice constant or symmetry, may be formed with reduced defects by using a two step approach proposed in this invention. Nanowires are first grown on a semiconductor substrate, and then a thin film of the disparate crystallographically inconsistent material is grown from the nanowires through a two dimensional growth mode. The nanowire material may better match crystallographically to both the substrate and the grown film, or is simply the same as the grown film.
    Type: Application
    Filed: March 28, 2006
    Publication date: October 11, 2007
    Inventors: Yongqian Wang, Yuxia Sun
  • Patent number: 7185384
    Abstract: A semiconductor wafer scrubber has a brush with a nubless outer surface for cleaning the surfaces of a semiconductor wafer. The nubless brush has a body and rotates around a central axis as it contacts the wafer surface. The brush has a central section with an outer diameter less than the diameter of the end sections.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: March 6, 2007
    Assignee: Intel Corporation
    Inventors: Yuxia Sun, Sujit Sharan
  • Publication number: 20060096049
    Abstract: A semiconductor wafer scrubber has a brush with a nubless outer surface for cleaning the surfaces of a semiconductor wafer. The nubless brush has a body and rotates around a central axis as it contacts the wafer surface. The brush has a central section with an outer diameter less than the diameter of the end sections.
    Type: Application
    Filed: December 20, 2005
    Publication date: May 11, 2006
    Inventors: Yuxia Sun, Sujit Sharan
  • Publication number: 20040040576
    Abstract: A semiconductor wafer scrubber has a brush with a nubless outer surface for cleaning the surfaces of a semiconductor wafer. The nubless brush has a body and rotates around a central axis as it contacts the wafer surface. The brush has a central section with an outer diameter less than the diameter of the end sections.
    Type: Application
    Filed: August 29, 2002
    Publication date: March 4, 2004
    Inventors: Yuxia Sun, Sujit Sharan