Abstract: The present disclosure discloses a sintered neodymium-iron-boron magnet and a preparation method thereof. The sintered neodymium-iron-boron magnet includes the following raw materials in mass percentage: 1%-40% of an iron powder or a steel powder with a magnetic induction intensity of more than 1.2 T, not more than 10% of a praseodymium-neodymium metal hydride powder, and a remainder of a neodymium-iron-boron fine powder, wherein the mass percentages of the above raw materials add up to 100%. The preparation method includes: weighing the raw materials in mass percentage; mixing the weighed raw materials uniformly, and then subjecting to magnetic-field press molding, isostatic pressing, sintering and tempering to obtain the sintered neodymium-iron-boron magnet.

Abstract: Disclosed are a semiconductor device, a preparation method therefor and electrical equipment thereof. The semiconductor device includes: a silicon substrate on which an emitter, a gate, and a collector are formed; a bootstrap electrode formed on the silicon substrate; and an insulating layer, formed on the silicon substrate and disposed between the emitter and the bootstrap electrode. A bootstrap capacitor is formed between the emitter and the bootstrap electrode.

Abstract: A power device and an electrical appliance are provided. The power device has a control input terminal, a first driving circuit and a second driving circuit. When the control input terminal is connected to a high level or a low level, the first driving circuit and the second driving circuit output a high/low level signal in a first voltage range or a high/low level signal in a second voltage range. The first voltage range is different from the second voltage range.

Abstract: Provided are a trench gate IGBT and a device. The trench gate IGBT includes an emitting electrode, a p well region, a gate, a gate oxide layer, a drift region and a back collecting electrode. The gate is located in a trench; the gate is isolated from the emitting electrode, the p well region and the drift region by the gate oxide layer; the trench is disposed inside a substrate; and recesses are provided at the boundary of the trench and the drift region. During switching on and off the trench gate IGBT, an interface between the drift region and a side surface of the trench is provided with recess gate oxide layers, so that electron charges can be restrained and accumulated, and improving the conduction capacity.

Abstract: Disclosed is a driver IC circuit of an intelligent power module including an upper bridge control signal input end, a lower bridge control signal input end, a PFC control signal input end, a logic input buffer circuit, a first upper bridge driver circuit, a second upper bridge driver circuit, a first lower bridge driver circuit, a second lower bridge driver circuit and a PFC driver circuit. The logic input buffer circuit performs full-wave filtering on control signals. The first upper bridge driver circuit, the first lower bridge driver circuit, the second upper bridge driver circuit and the second lower bridge driver circuit each drives a switch transistor corresponding to a first or second external motor according to one of the control signals. The PFC driver circuit drives an external PFC switch transistor according to one of the control signals. An intelligent power module and an air conditioner are also disclosed.

Abstract: An insulated gate bipolar transistor includes a semiconductor substrate, and the semiconductor substrate includes: a collector region doped in a first type, wherein the collector region includes a bump region; a first drift region doped in a second type and a second drift region doped in the second type; wherein the first drift region and the second drift region locate on a side of the collector region having the bump region, a profile contour of the first drift region matches a profile contour of the bump region, such that the second drift region does not contact the bump region, and a doping concentration of the first drift region is greater than a doping concentration of the second drift region; and a first active region and a second active region, formed at two opposite ends of the second drift region.

Abstract: Disclosed are a semiconductor device, a preparation method therefor and electrical equipment thereof. The semiconductor device includes: a silicon substrate on which an emitter, a gate, and a collector are formed; a bootstrap electrode formed on the silicon substrate; and an insulating layer, formed on the silicon substrate and disposed between the emitter and the bootstrap electrode. A bootstrap capacitor is formed between the emitter and the bootstrap electrode.

Abstract: A power device for an electrical applicant, such as, a household air conditioner, is provided. The power device has a control input terminal, a first driving circuit, and a second driving circuit. When the control input terminal inputs a low level, the first driving circuit and the second driving circuit output high and low level signals in a first voltage range. When the control input terminal inputs a high level, the first driving circuit and the second driving circuit output high and low level signals in a second voltage range. The first voltage range is different from the second voltage range.

Abstract: Provided are a trench gate IGBT and a device. The trench gate IGBT includes an emitting electrode, a p well region, a gate, a gate oxide layer, a drift region and a back collecting electrode. The gate is located in a trench; the gate is isolated from the emitting electrode, the p well region and the drift region by the gate oxide layer; the trench is disposed inside a substrate; and recesses are provided at the boundary of the trench and the drift region. During switching on and off the trench gate IGBT, an interface between the drift region and a side surface of the trench is provided with recess gate oxide layers, so that electron charges can be restrained and accumulated, and improving the conduction capacity.

Abstract: A power device and an electrical appliance are provided. The power device has a control input terminal, a first driving circuit and a second driving circuit. When the control input terminal is connected to a high level or a low level, the first driving circuit and the second driving circuit output a high/low level signal in a first voltage range or a high/low level signal in a second voltage range. The first voltage range is different from the second voltage range.

Abstract: A power device for an electrical applicant, such as, a household air conditioner, is provided. The power device has a control input terminal, a first driving circuit, and a second driving circuit. When the control input terminal inputs a low level, the first driving circuit and the second driving circuit output high and low level signals in a first voltage range. When the control input terminal inputs a high level, the first driving circuit and the second driving circuit output high and low level signals in a second voltage range. The first voltage range is different from the second voltage range.

Abstract: Disclosed is a driver IC circuit of an intelligent power module including an upper bridge control signal input end, a lower bridge control signal input end, a PFC control signal input end, a logic input buffer circuit, a first upper bridge driver circuit, a second upper bridge driver circuit, a first lower bridge driver circuit, a second lower bridge driver circuit and a PFC driver circuit. The logic input buffer circuit performs full-wave filtering on control signals. The first upper bridge driver circuit, the first lower bridge driver circuit, the second upper bridge driver circuit and the second lower bridge driver circuit each drives a switch transistor corresponding to a first or second external motor according to one of the control signals. The PFC driver circuit drives an external PFC switch transistor according to one of the control signals. An intelligent power module and an air conditioner are also disclosed.

Abstract: A highly integrated power module and an air conditioner are provided. The module has a substrate. The module has a power factor correction element, a rectifier bridge, a compressor inverter and a blower inverter, which are arranged on the substrate. The rectifier bridge is arranged on a first side of the power factor correction element. The compressor inverter is arranged on a second side of the power factor correction element. The blower inverter is arranged on a third side of the compressor inverter. The rectifier bridge is electrically connected to the power factor correction element. The power factor correction element is electrically connected to the compressor inverter and the blower inverter.

Abstract: Disclosed are a driver IC circuit of an intelligent power module, an intelligent power module and an air conditioner. The driver IC circuit includes: an operating voltage input end, an inverter logic buffer circuit, an upper bridge driver circuit, a lower bridge driver circuit, a PFC logic buffer circuit, a PFC driver circuit, a first voltage regulation control input end, a second voltage regulation control input end, a first voltage regulation module and a second voltage regulation module. The first voltage regulation module increases or decreases the operating voltage according to the first voltage regulation control signal; the second voltage regulation module increase or decreases the operating voltage according to the second voltage regulation control signal; or output the operating voltage to the PFC logic buffer input circuit and the PFC driver circuit. The problem that existing driver IC circuits cannot directly drive SiC-based power switching devices can be solved.

Abstract: An intelligent power module and a controller for an air conditioner are provided. For the intelligent power module, an adjust circuit is additionally provided between a respective drive circuit and a respective IGBT transistor. The adjust circuit detects a change in the voltage of a low voltage power supply of the intelligent power module in real time, and disables the output of the module when the voltage is detected to be too low due to fluctuation of the low voltage power supply. This operation releases the charge accumulated in the IGBT transistor, when energy storage of a drive motor causes charge accumulation of the IGBT transistor. The adjust circuit can continue releasing the charge when the low voltage power supply is restored to normal, to prevent the operating reliability of the module from being affected by the impact of the charge on internal circuits of the module.

Abstract: An intelligent power module and a controller for an air conditioner are provided. For the intelligent power module, an adjust circuit is additionally provided between a respective drive circuit and a respective IGBT transistor. The adjust circuit detects a change in the voltage of a low voltage power supply of the intelligent power module in real time, and disables the output of the module when the voltage is detected to be too low due to fluctuation of the low voltage power supply. This operation releases the charge accumulated in the IGBT transistor, when energy storage of a drive motor causes charge accumulation of the IGBT transistor. The adjust circuit can continue releasing the charge when the low voltage power supply is restored to normal, to prevent the operating reliability of the module from being affected by the impact of the charge on internal circuits of the module.

Abstract: An intelligent power module and a manufacturing method thereof are provided. The intelligent power module includes a radiator, an insulating layer, a circuit wiring, a circuit component and a metal wire. At least part of a lower surface of the radiator is defined as a heat dissipating area, the heat dissipating area is provided with a heat dissipating corrugation, the insulating layer is provided to an upper surface of the radiator, the circuit wiring is provided to the insulating layer, and the circuit component is provided to the circuit wiring and is connected to the circuit wiring via the metal wire.

Abstract: Disclosed are a driver IC circuit of an intelligent power module, an intelligent power module and an air conditioner. The driver IC circuit includes: an operating voltage input end, an inverter logic buffer circuit, an upper bridge driver circuit, a lower bridge driver circuit, a PFC logic buffer circuit, a PFC driver circuit, a first voltage regulation control input end, a second voltage regulation control input end, a first voltage regulation module and a second voltage regulation module. The first voltage regulation module increases or decreases the operating voltage according to the first voltage regulation control signal; the second voltage regulation module increase or decreases the operating voltage according to the second voltage regulation control signal; or output the operating voltage to the PFC logic buffer input circuit and the PFC driver circuit. The problem that existing driver IC circuits cannot directly drive SiC-based power switching devices can be solved.

Abstract: An intelligent power module and a manufacturing method thereof are provided. The intelligent power module includes a radiator, an insulating layer, a circuit wiring, a circuit component and a metal wire. At least part of a lower surface of the radiator is defined as a heat dissipating area, the heat dissipating area is provided with a heat dissipating corrugation, the insulating layer is provided to an upper surface of the radiator, the circuit wiring is provided to the insulating layer, and the circuit component is provided to the circuit wiring and is connected to the circuit wiring via the metal wire.