Abstract: A method of training a deep learning model, a method of processing a natural language, an electronic device, and a storage medium are provided, which relate to a field of artificial intelligence, in particular to deep learning technology and natural language processing technology. The method includes: inputting first sample data into a first deep learning model to obtain a first output result; training the first deep learning model according to the first output result and a first target output result, the first target output result is obtained by processing the first sample data using a reference deep learning model; inputting second sample data into a second deep learning model to obtain a second output result; and training the second deep learning model according to the second output result and a second target output result, to obtain a trained second deep learning model.

Abstract: A pre-training method of a neural network model, an electronic device, and a medium. The pre-training data is inputted to the initial neural network model, and the initial neural network model is pre-trained in the first training mode, in the first training mode, the plurality of hidden layers share one hidden layer parameter, and the loss value of the initial neural network model is obtained, if the loss value of the initial neural network model is less than a preset threshold, the initial neural network model continues to be pre-trained in the second training mode, in the second training mode, each of the plurality of hidden layers has its own hidden layer parameter.

Abstract: Methods for forming semiconductor devices, such as FinFET devices, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets and a bottom surface including two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed by an isotropic plasma etch process. The isotropic plasma etch process may be performed at a pressure ranging from about 5 mTorr to about 200 mTorr in order to maximize the amount of radicals while minimizing the amount of ions in the plasma. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

Abstract: Methods for forming semiconductor devices, such as FinFET devices, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets and a bottom surface including two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed by an isotropic plasma etch process. The isotropic plasma etch process may be performed at a pressure ranging from about 5 mTorr to about 200 mTorr in order to maximize the amount of radicals while minimizing the amount of ions in the plasma. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.