Patents by Inventor Yuxiang May Wang
Yuxiang May Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7638440Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.Type: GrantFiled: March 12, 2004Date of Patent: December 29, 2009Assignee: Applied Materials, Inc.Inventors: Yuxiang May Wang, Sudha S. R. Rathi, Michael Chiu Kwan, Hichem M'Saad
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Publication number: 20080197109Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.Type: ApplicationFiled: October 31, 2007Publication date: August 21, 2008Applicant: Applied Materials, Inc.Inventors: David S. Mui, Wei Liu, Thorsten Lill, Christopher Dennis Bencher, Yuxiang May Wang
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Patent number: 7407893Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.Type: GrantFiled: February 24, 2005Date of Patent: August 5, 2008Assignee: Applied Materials, Inc.Inventors: Martin Jay Seamons, Wendy H. Yeh, Sudha S. R. Rathi, Deenesh Padhi, Andy (Hsin Chiao) Luan, Sum-Yee Betty Tang, Priya Kulkarni, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad, Yuxiang May Wang, Michael Chiu Kwan
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Patent number: 7335462Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: GrantFiled: February 9, 2007Date of Patent: February 26, 2008Assignee: Applied Materials, Inc.Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
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Patent number: 7223526Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: GrantFiled: December 21, 2004Date of Patent: May 29, 2007Assignee: Applied Materials, Inc.Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
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Patent number: 7105460Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.Type: GrantFiled: July 11, 2002Date of Patent: September 12, 2006Assignee: Applied MaterialsInventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti
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Patent number: 6927178Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.Type: GrantFiled: December 10, 2003Date of Patent: August 9, 2005Assignee: Applied Materials, Inc.Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti, Miguel Fung, Keebum Jung, Lei Zhu
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Patent number: 6841341Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: GrantFiled: December 17, 2002Date of Patent: January 11, 2005Assignee: Applied Materials, Inc.Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
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Publication number: 20040214446Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.Type: ApplicationFiled: December 10, 2003Publication date: October 28, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti, Miguel Fung, Keebum Jung, Lei Zhu
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Publication number: 20040009676Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.Type: ApplicationFiled: July 11, 2002Publication date: January 15, 2004Applicant: Applied Materials, Inc.Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti
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Patent number: 6573030Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: GrantFiled: June 8, 2000Date of Patent: June 3, 2003Assignee: Applied Materials, Inc.Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
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Publication number: 20030091938Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: ApplicationFiled: December 17, 2002Publication date: May 15, 2003Applicant: Applied Materials, Inc.Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S. Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
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Publication number: 20020086547Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.Type: ApplicationFiled: July 13, 2001Publication date: July 4, 2002Applicant: Applied Materials, Inc.Inventors: David S. Mui, Wei Liu, Thorsten Lill, Christopher Dennis Bencher, Yuxiang May Wang