Patents by Inventor Yuxiang May Wang

Yuxiang May Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7638440
    Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: December 29, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Yuxiang May Wang, Sudha S. R. Rathi, Michael Chiu Kwan, Hichem M'Saad
  • Publication number: 20080197109
    Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.
    Type: Application
    Filed: October 31, 2007
    Publication date: August 21, 2008
    Applicant: Applied Materials, Inc.
    Inventors: David S. Mui, Wei Liu, Thorsten Lill, Christopher Dennis Bencher, Yuxiang May Wang
  • Patent number: 7407893
    Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.
    Type: Grant
    Filed: February 24, 2005
    Date of Patent: August 5, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Martin Jay Seamons, Wendy H. Yeh, Sudha S. R. Rathi, Deenesh Padhi, Andy (Hsin Chiao) Luan, Sum-Yee Betty Tang, Priya Kulkarni, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad, Yuxiang May Wang, Michael Chiu Kwan
  • Patent number: 7335462
    Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: February 26, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
  • Patent number: 7223526
    Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
    Type: Grant
    Filed: December 21, 2004
    Date of Patent: May 29, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
  • Patent number: 7105460
    Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.
    Type: Grant
    Filed: July 11, 2002
    Date of Patent: September 12, 2006
    Assignee: Applied Materials
    Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti
  • Patent number: 6927178
    Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
    Type: Grant
    Filed: December 10, 2003
    Date of Patent: August 9, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti, Miguel Fung, Keebum Jung, Lei Zhu
  • Patent number: 6841341
    Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: January 11, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
  • Publication number: 20040214446
    Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
    Type: Application
    Filed: December 10, 2003
    Publication date: October 28, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti, Miguel Fung, Keebum Jung, Lei Zhu
  • Publication number: 20040009676
    Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.
    Type: Application
    Filed: July 11, 2002
    Publication date: January 15, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti
  • Patent number: 6573030
    Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
    Type: Grant
    Filed: June 8, 2000
    Date of Patent: June 3, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
  • Publication number: 20030091938
    Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
    Type: Application
    Filed: December 17, 2002
    Publication date: May 15, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S. Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
  • Publication number: 20020086547
    Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.
    Type: Application
    Filed: July 13, 2001
    Publication date: July 4, 2002
    Applicant: Applied Materials, Inc.
    Inventors: David S. Mui, Wei Liu, Thorsten Lill, Christopher Dennis Bencher, Yuxiang May Wang