Abstract: An information processing method and apparatus, a terminal, and a storage medium. The information processing method comprises: determining first content in response to a first operation event of a first control in a first document (S11); and adding the first content to the first document on the basis of content information and type information of the first content (S12). The type information comprises first type information and/or second type information, the second type information having an association with the first type information. In the described method, first content can be added to a first document according to content information and type information of the first content, so as to distinguish different ways of adding the first content.

Abstract: The present invention relates to a symmetric quadrupole structured field emission display without spacer comprising the upper and under substrates with a dielectric layer in between, wherein comb-like dielectric layer with lateral connection belts and a number of longitudinal working belts and longitudinal anodes are arranged on the upper substrate, bus electrodes are arranged longitudinally along the center on each anode, on the top, longitudinal alternating phosphor layer and dielectric layer for isolation on anode, gate electrodes are arranged on both sides of each longitudinal work belts, with the bus electrode as symmetry center, forming interdigital gate electrodes, horizontal cathode electrodes and longitudinal auxiliary electrodes are on the under substrate, resistor layer for current limiting and dielectric layer for cathode protection are arranged alternating horizontally on each cathode electrode, each intersect of the auxiliary electrode and cathode is isolated by the dielectric layer for cathode.

Abstract: The present invention relates to a symmetric quadrupole structured field emission display without spacer comprising the upper and under substrates with a dielectric layer in between, wherein comb-like dielectric layer with lateral connection belts and a number of longitudinal working belts and longitudinal anodes are arranged on the upper substrate, bus electrodes are arranged longitudinally along the center on each anode, on the top, longitudinal alternating phosphor layer and dielectric layer for isolation on anode, gate electrodes are arranged on both sides of each longitudinal work belts, with the bus electrode as symmetry center, forming interdigital gate electrodes, horizontal cathode electrodes and longitudinal auxiliary electrodes are on the under substrate, resistor layer for current limiting and dielectric layer for cathode protection are arranged alternating horizontally on each cathode electrode, each intersect of the auxiliary electrode and cathode is isolated by the dielectric layer for cathode

Abstract: The present invention relates to a triode field emission display with anode and gate on the same substrate, comprising anode-gate substrate and cathode substrate, parallel and adapted in the size; a number of strip-like cathode conducting layers arranged alternating on the cathode substrate; resistor layer for current limiting and dielectric layer for cathode protection are arranged alternately on the cathode conducting layer in the longitudinal direction; the electron emission materials are arranged on the resistor layer for current limiting; wherein the strip-like anode conducting layer and strip-like gate conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate and the cathode substrates, one end of the dielectric layer for isolation is connected to the dielectric layer for gate protection, the other end is connected to the dielectric layer for cathode protection.

Abstract: The present invention relates to a triode field emission display with anode and gate on the same substrate, comprising anode-gate substrate and cathode substrate, parallel and adapted in the size; a number of strip-like cathode conducting layers arranged alternating on the cathode substrate; resistor layer for current limiting and dielectric layer for cathode protection are arranged alternately on the cathode conducting layer in the longitudinal direction; the electron emission materials are arranged on the resistor layer for current limiting; wherein the strip-like anode conducting layer and strip-like gate conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate and the cathode substrates, one end of the dielectric layer for isolation is connected to the dielectric layer for gate protection, the other end is connected to the dielectric layer for cathode protection.