Patents by Inventor Yuxiong REN

Yuxiong REN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11145790
    Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: October 12, 2021
    Assignee: ALPAD CORPORATION
    Inventors: Go Oike, Hiroshi Katsuno, Koji Kaga, Masakazu Sawano, Yuxiong Ren, Kazuyuki Miyabe
  • Publication number: 20200127165
    Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: ALPAD CORPORATION
    Inventors: Go Oike, Hiroshi Katsuno, Koji Kaga, Masakazu Sawano, Yuxiong Ren, Kazuyuki Miyabe
  • Patent number: 10559716
    Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: February 11, 2020
    Assignee: ALPAD CORPORATION
    Inventors: Go Oike, Hiroshi Katsuno, Koji Kaga, Masakazu Sawano, Yuxiong Ren, Kazuyuki Miyabe
  • Publication number: 20190088821
    Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.
    Type: Application
    Filed: March 8, 2017
    Publication date: March 21, 2019
    Applicant: ALPAD CORPORATION
    Inventors: Go OIKE, Hiroshi KATSUNO, Koji KAGA, Masakazu SAWANO, Yuxiong REN, Kazuyuki MIYABE