Abstract: A substrate processing method includes an operation for holding a substrate in a horizontal position, the substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed, an operation for irradiating the altered layer with ultraviolet rays to reform the altered layer into a reformed layer, and an operation for supplying a chemical solution to the amorphous silicon layer having the reformed layer on the surface to perform wet etching on the amorphous silicon layer. This improves the efficiency of the wet etching on the amorphous silicon layer.

Abstract: An etching method according to the present invention includes a step of creating a reduced pressure state inside of a processing chamber accommodating a substrate, after the step of creating the reduced pressure state, a step of supplying vapor into the processing chamber, after the step of creating the reduced pressure state, a step of supplying an etching gas containing hydrogen fluoride into the processing chamber and etching the coating film formed on the substrate, and in the step of supplying the vapor, a step of detecting OH stretching vibration in the substrate by infrared spectroscopy, in which the step of etching the coating film is performed when the OH stretching vibration of a predetermined threshold value or higher is detected in the substrate. Therefore, the efficiency of the etching process is enhanced.

Abstract: An etching method according to the present invention includes after a step of creating a reduced pressure state, a step of supplying an etching gas containing hydrogen fluoride into a processing chamber and etching a coating film formed on a substrate, after the step of etching the coating film, a step of cleaning the substrate by supplying vapor into the processing chamber, and in the step of cleaning the substrate, a step of detecting Si—F stretching vibration in the substrate by infrared spectroscopy, in which the step of cleaning the substrate ends when the Si—F stretching vibration equal to or lower than a predetermined first threshold value is detected. Therefore, the time required for cleaning the substrate is prevented from being unnecessarily long.

Abstract: In a substrate processing method, a silicon oxide film formed on a substrate is etched. The substrate processing method includes a first etching step and a second etching step. In the first etching step, the silicon oxide film is selectively etched against another film by supplying a hydrogen fluoride gas into a chamber in a state in which a pressure in the chamber is a first pressure lower than the atmospheric pressure. In the second etching step, the silicon oxide film is selectively etched against the another film by supplying the hydrogen fluoride gas into the chamber in a state in which the pressure in the chamber is a second pressure lower than the atmospheric pressure. The second pressure is lower than the first pressure.

Abstract: The substrate processing method includes alternately performing a plurality of times of a metal oxide layer forming process in which an oxidation fluid is supplied to a surface of the substrate and a metal oxide layer composed of a one-atom layer or a several-atom layer is formed on a surface layer of the metal layer; and a metal oxide layer removal process in which an etching solution is supplied to the surface of the substrate and the metal oxide layer is removed from the surface of the substrate. A final dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the surface of the substrate in a final metal oxide layer removal process is lower than an initial dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the substrate in an initial metal oxide layer removal process.

Abstract: A substrate processing method includes an operation for holding a substrate in a horizontal position, the substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed, an operation for irradiating the altered layer with ultraviolet rays to reform the altered layer into a reformed layer, and an operation for supplying a chemical solution to the amorphous silicon layer having the reformed layer on the surface to perform wet etching on the amorphous silicon layer. This improves the efficiency of the wet etching on the amorphous silicon layer.

Abstract: A substrate processing method processes a substrate having a surface in which a plurality of recessed parts is formed. The substrate processing method includes a processing target layer removing process of etching and removing at least a part of a processing target layer by supplying an etching solution, of which an etching rate for a crystal grain of a processing target material in the processing target layer formed in the recessed part in a manner of a surface thereof is exposed is equal to an etching rate for a crystal grain boundary in the processing target layer, to the surface of the substrate.

Abstract: A substrate processing method includes generating a low-oxygen processing liquid by reducing oxygen dissolved in a processing liquid (step S12), and processing a main surface (i.e., upper surface) of a substrate by supplying the low-oxygen processing liquid to the substrate, the upper surface having a first metal part and a second metal part in contact with the first metal part (step S14). In the step S14, the low-oxygen processing liquid is brought into contact with an interface between the first metal part and the second metal part to inhibit oxygen reduction reaction on the second metal part which is nobler than the first metal part, and thereby to inhibit dissolution of the first metal part. According to the substrate processing method, it is possible to suitably inhibit dissolution of the metal part (i.e., the first metal part) on the substrate.

Abstract: A substrate processing method which processes a substrate having a metal layer on a surface thereof includes a metal oxide layer forming step of forming a metal oxide layer formed of one atomic layer or several atomic layers on a surface layer of the metal layer by supplying an oxidizing fluid to the surface of the substrate, and a metal oxide layer removing step of selectively removing the metal oxide layer from the surface of the substrate by supplying an etchant to the surface of the substrate.

Abstract: The substrate processing method includes alternately performing a plurality of times of a metal oxide layer forming process in which an oxidation fluid is supplied to a surface of the substrate and a metal oxide layer composed of a one-atom layer or a several-atom layer is formed on a surface layer of the metal layer; and a metal oxide layer removal process in which an etching solution is supplied to the surface of the substrate and the metal oxide layer is removed from the surface of the substrate. A final dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the surface of the substrate in a final metal oxide layer removal process is lower than an initial dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the substrate in an initial metal oxide layer removal process.

Abstract: A substrate processing method processes a substrate having a surface in which a plurality of recessed parts is formed. The substrate processing method includes a processing target layer removing process of etching and removing at least a part of a processing target layer by supplying an etching solution, of which an etching rate for a crystal grain of a processing target material in the processing target layer formed in the recessed part in a manner of a surface thereof is exposed is equal to an etching rate for a crystal grain boundary in the processing target layer, to the surface of the substrate.

Abstract: A substrate processing method which processes a substrate having a metal layer on a surface thereof includes a metal oxide layer forming step of forming a metal oxide layer formed of one atomic layer or several atomic layers on a surface layer of the metal layer by supplying an oxidizing fluid to the surface of the substrate, and a metal oxide layer removing step of selectively removing the metal oxide layer from the surface of the substrate by supplying an etchant to the surface of the substrate.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: In a substrate processing apparatus (1), a silicon oxide film on a main surface of a substrate (9) is removed in an oxide film removing part (4) and then a silylation material is applied to the main surface, to thereby perform a silylation process in a silylation part (6). It is thereby possible to lengthen the Q time from the removal of the silicon oxide film to the formation of the silicon germanium film and reduce the temperature for prebaking in the formation of the silicon germanium film.

Abstract: A substrate processing method includes a water removing unit for removing water from a substrate, a silylating agent supplying unit for supplying a silylating agent to the substrate and an etching agent supplying unit for supplying an etching agent to the substrate. A control unit controls the said units to execute a water removing step, a silylating step and an etching step in that order.

Abstract: A substrate processing method includes a water removing step of removing water from a substrate, a silylating step of supplying a silylating agent to the substrate after the water removing step, and an etching step of supplying an etching agent to the substrate after the silylating step. The substrate may have a surface on which a nitride film and an oxide film are exposed and in this case, the etching step may be a selective etching step of selectively etching the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component.

Abstract: A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate.

Abstract: A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.