Patents by Inventor Yuya Akeboshi
Yuya Akeboshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096659Abstract: A substrate processing apparatus includes: a plurality of roller pairs configured to place a plurality of substrates, respectively, wherein the substrates are arranged side by side in a horizontal direction with a predetermined interval, and rotate the plurality of substrates, respectively, in a circumferential direction; a first, second, and third circulation groove that are disposed along outer peripheral portions of each of the plurality of substrates; a chemical solution supplier configured to supply a chemical solution to the outer peripheral portions of the plurality of substrates through the first circulation groove; a rinse solution supplier configured to supply a rinse solution to the outer peripheral portions of the plurality of substrates through the second circulation groove; and a fluid supplier configured to supply a fluid for drying the rinse solution to the outer peripheral portions of the plurality of substrates through the third circulation groove.Type: ApplicationFiled: August 28, 2023Publication date: March 21, 2024Applicant: Kioxia CorporationInventors: Fuyuma ITO, Jun TAKAGI, Ai MORI, Yosuke MARUYAMA, Yuya AKEBOSHI, Takashi WATANABE, Hiroyasu IIMORI
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Patent number: 11784064Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.Type: GrantFiled: November 17, 2020Date of Patent: October 10, 2023Assignee: Kioxia CorporationInventors: Yasuhito Yoshimizu, Yuya Akeboshi, Fuyuma Ito, Hakuba Kitagawa
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Publication number: 20230072887Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a processor configured to process a film provided on an end portion of a substrate. The apparatus further includes a detector configured to detect information relating to a shape of the end portion of the substrate. The apparatus further includes a controller configured to control the processing of the film by the processor, based on the information relating to the shape of the end portion of the substrate.Type: ApplicationFiled: March 10, 2022Publication date: March 9, 2023Applicant: Kioxia CorporationInventors: Fuyuma ITO, Hiroyasu IIMORI, Shinsuke MURAKI, Yuya AKEBOSHI, Yosuke MARUYAMA, Satoshi NAKAOKA
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Patent number: 11296111Abstract: According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.Type: GrantFiled: February 25, 2020Date of Patent: April 5, 2022Assignee: KIOXIA CORPORATIONInventors: Yosuke Mitsuno, Tatsufumi Hamada, Shinichi Sotome, Tomohiro Kuki, Yuya Akeboshi
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Publication number: 20220013367Abstract: A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.Type: ApplicationFiled: September 23, 2021Publication date: January 13, 2022Applicant: Toshiba Memory CorporationInventors: Yasuhito YOSHIMIZU, Hiroyuki YASUI, Yuya AKEBOSHI, Fuyuma ITO
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Publication number: 20210090913Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.Type: ApplicationFiled: November 17, 2020Publication date: March 25, 2021Applicant: TOSHIBA MEMORY CORPORATIONInventors: Yasuhito YOSHIMIZU, Yuya AKEBOSHI, Fuyuma ITO, Hakuba KITAGAWA
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Publication number: 20210028189Abstract: According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.Type: ApplicationFiled: February 25, 2020Publication date: January 28, 2021Inventors: Yosuke MITSUNO, Tatsufumi HAMADA, Shinichi SOTOME, Tomohiro KUKI, Yuya AKEBOSHI
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Patent number: 10879087Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.Type: GrantFiled: March 14, 2018Date of Patent: December 29, 2020Assignee: TOSHIBA MEMORY CORPORATIONInventors: Yasuhito Yoshimizu, Yuya Akeboshi, Fuyuma Ito, Hakuba Kitagawa
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Patent number: 10529588Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: GrantFiled: June 20, 2018Date of Patent: January 7, 2020Assignee: Toshiba Memory CorporationInventors: Yuya Akeboshi, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Patent number: 10403524Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.Type: GrantFiled: May 25, 2018Date of Patent: September 3, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shinsuke Muraki, Hiroaki Yamada, Yuya Akeboshi, Katsuhiro Sato
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Publication number: 20190035636Abstract: A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.Type: ApplicationFiled: July 6, 2018Publication date: January 31, 2019Applicant: Toshiba Memory CorporationInventors: Yasuhito Yoshimizu, Hiroyuki Yasui, Yuya Akeboshi, Fuyuma Ito
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Publication number: 20180301349Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: ApplicationFiled: June 20, 2018Publication date: October 18, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Yuya AKEBOSHI, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Publication number: 20180277407Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.Type: ApplicationFiled: May 25, 2018Publication date: September 27, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Shinsuke MURAKI, Hiroaki YAMADA, Yuya AKEBOSHI, Katsuhiro SATO
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Publication number: 20180269082Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.Type: ApplicationFiled: March 14, 2018Publication date: September 20, 2018Applicant: Toshiba Memory CorporationInventors: Yasuhito Yoshimizu, Yuya Akeboshi, Fuyuma Ito, Hakuba Kitagawa
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Publication number: 20180265989Abstract: According to an embodiment, a substrate treatment apparatus includes a noble metal-containing member having a concave-convex surface including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While convex portions of the concave-convex surface are contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal to remove the metal with etching.Type: ApplicationFiled: September 11, 2017Publication date: September 20, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Yasuhito YOSHIMIZU, Yuya AKEBOSHI, Fuyuma ITO, Hakuba KITAGAWA
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Patent number: 10014186Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.Type: GrantFiled: January 6, 2016Date of Patent: July 3, 2018Assignee: Toshiba Memory CorporationInventors: Yuya Akeboshi, Hiroshi Tomita, Hisashi Okuchi, Yasuhito Yoshimizu, Hiroaki Yamada
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Patent number: 10008400Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.Type: GrantFiled: March 3, 2017Date of Patent: June 26, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shinsuke Muraki, Hiroaki Yamada, Yuya Akeboshi, Katsuhiro Sato
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Patent number: 9991159Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved.Type: GrantFiled: March 3, 2017Date of Patent: June 5, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Fuyuma Ito, Yasuhito Yoshimizu, Yuya Akeboshi, Hisashi Okuchi, Masayuki Kitamura
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Publication number: 20180082869Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.Type: ApplicationFiled: March 3, 2017Publication date: March 22, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Shinsuke MURAKI, Hiroaki YAMADA, Yuya AKEBOSHI, Katsuhiro SATO
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Publication number: 20180082893Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved.Type: ApplicationFiled: March 3, 2017Publication date: March 22, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Fuyuma ITO, Yasuhito YOSHIMIZU, Yuya AKEBOSHI, Hisashi OKUCHI, Masayuki KITAMURA