Abstract: A hydrogen supply device disposed in a high-potential section includes a bottle internally provided with a hydrogen absorbing alloy.

Abstract: A semiconductor manufacturing apparatus includes a wafer clamp including a mechanical clamp and an electrostatic chuck, and a controller that controls the wafer clamp to selective clamp a wafer using only the mechanical clamp based on a processing temperature of a wafer.

Abstract: A data acquisition unit (21) acquires operation data including an influence-source object being an object which has performed an operation to influence another object, an influence-destination object being an object influenced by the operation performed by the influence-source object, and an attack probability representing a probability of the operation being an attack. A relation construction unit (22) constructs relation data when the attack probability is equal to or higher than a threshold value A, by adding a relation between the influence-source object and the influence-destination object to relation data. When an attack is detected, a specification unit (23) specifies at least either of an infected range supposed to be affected by the attack, and an intrusion route of the attack, based on the relation data.

Abstract: A semiconductor manufacturing apparatus includes a wafer clamp including a mechanical clamp and an electrostatic chuck, and a controller that controls the wafer clamp to selective clamp a wafer using only the mechanical clamp based on a processing temperature of a wafer.

Abstract: An ion implanter includes an angle measurement apparatus that measures a first angle of an ion beam in a first direction and a second angle of the ion beam in a second direction, the first direction and the second direction being mutually orthogonal to a traveling direction of the ion beam, an angle corrector that is located in a beamline of the ion beam and corrects an angle of the ion beam in the first direction based on the first angle, a wafer holder that holds a wafer in a process chamber, a tilt device that is connected to the wafer holder and that rotates the wafer around a rotation axis parallel to the first direction, and a controller that controls the tilt device based on the second angle, crystal axis information of the wafer, and implantation recipe information.

Abstract: A plasma source includes a chamber in which plasma is generated, a cathode provided in the chamber that emits electrons into the chamber, and an electromagnet provided around the chamber. The electromagnet includes a coil and magnetic flux passing members that cause a magnetic flux generated by energization of the coil to reach the inside of the chamber. A usage mode of one or more of the magnetic flux passing members is changeable.

Abstract: An ion beam extraction electrode includes a first member including a first beam passage hole through which an ion beam passes, a second member positioned opposite the first member and including a second beam passage hole through which the ion beam passes, a heater partially or fully disposed between the first member and the second member, and a gas shutoff member that blocks a flow of a gas from entering a space between the first member and the second member.

Abstract: An vaporizer includes a crucible, a heater that heats the crucible, a support member that supports the crucible and includes an internal space in which a pressure in the internal space can be changed, and a control device. The control device increases the pressure of the internal space when the heating of the crucible by the heater is stopped, compared to the pressure when the crucible is heated by the heater.

Abstract: An ion source includes a vaporizer, a plasma chamber, and a controller. The vaporizer produces a reaction product by supplying, through a first gas supply line to a crucible in which a solid material is installed, a reactive gas that reacts with the solid material, and vaporizes the reaction product by heating the crucible with a heater. The plasma chamber is supplied with a vapor from the vaporizer through a vapor supply line, and has a second gas supply line connected to the plasma chamber separately from the vapor supply line. The controller controls the heater to heat the crucible while a gas is being supplied from the second gas supply line to the plasma chamber and stops a supply of the reactive gas through the first gas supply line to the crucible.

Abstract: An ion beam irradiation apparatus includes a plasma generation container in which plasma is generated, a vaporizer connected to the plasma generation container, a halogen gas supply passage through which a halogen gas is supplied to the vaporizer, an air supply passage through which air is supplied to the vaporizer, and an evacuation passage through which a reaction product produced through a reaction between the halogen gas and the air is evacuated to an outside of the ion beam irradiation apparatus.

Abstract: A method for forming a multilayer coating film comprising the steps of: (1) applying a base paint (X) to a substrate to form a base coating film, (2) applying an effect pigment dispersion (Y) to the base coating film formed in step (1) to form an effect coating film, (3) applying a clear paint (Z) to the effect coating film formed in step (2) to form a clear coating film, and (4) heating the uncured base coating film, the uncured effect coating film, and the uncured clear coating film formed in steps (1) to (3) to thereby simultaneously cure these three coating films; wherein the effect pigment dispersion (Y) contains water, a black pigment (A), a vapor deposition metal flake pigment (B), and a rheology control agent (C).

Abstract: A hydrogen supply device disposed in a high-potential section includes a bottle internally provided with a hydrogen absorbing alloy.

Abstract: An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

Abstract: An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

Abstract: A method for forming a multilayer coating film comprising the steps of: (1) applying a base paint (X) to a substrate to form a base coating film, (2) applying an effect pigment dispersion (Y) to the base coating film formed in step (1) to form an effect coating film, (3) applying a clear paint (Z) to the effect coating film formed in step (2) to form a clear coating film, and (4) heating the uncured base coating film, the uncured effect coating film, and the uncured clear coating film formed in steps (1) to (3) to thereby simultaneously cure these three coating films; wherein the effect pigment dispersion (Y) contains water, a black pigment (A), a vapor deposition metal flake pigment (B), and a rheology control agent (C).

Abstract: An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.