Abstract: An antenna unit to be used by being installed so as to face window glass of a building, the antenna unit including a radiating element, a reflective member configured to reflect electromagnetic waves radiated from the radiating element toward outside of the building, and a support unit configured to removably support the reflective member. An antenna unit attachment method includes installing an antenna unit so as to face window glass for a building, the antenna unit having a radiating element and a support unit, and supporting a reflective member that reflects electromagnetic waves radiated from the radiating element by the support unit on an outdoor side relative to the radiating element.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator. The surface acoustic wave resonator includes a piezoelectric substrate, interdigital transducer electrodes disposed on an upper surface of the piezoelectric substrate, a dielectric temperature compensation layer disposed on the piezoelectric substrate to cover the interdigital transducer electrodes, and a dielectric passivation layer over the temperature compensation layer. The passivation layer may include an oxide layer configured to have a sound velocity greater than that of the temperature compensation layer to suppress a transverse signal transmission.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with hyperbolic mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator that may include a piezoelectric substrate, interdigital transducer (IDT) electrodes disposed on an upper surface of the piezoelectric substrate, and a dielectric film covering the piezoelectric substrate and the IDT electrode for temperature compensation. The IDT electrodes may include bus bar electrode regions spaced apart from each other in a transverse direction perpendicular to a propagation direction of a surface acoustic wave to be excited, an overlapping region sandwiched between the bus bar regions, and gap regions defined between respective bus bar electrode regions and the overlapping region in the transverse direction. Each of the gap regions may include a dummy electrode in a dummy electrode region extending from the bus bar electrode region in the transverse direction. The dielectric film may include an open region exposing a respective bus bar electrode region and dummy electrode region.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator. The surface acoustic wave resonator includes a piezoelectric substrate, interdigital transducer electrodes formed on an upper surface of the piezoelectric substrate, a dielectric temperature compensation layer formed on the piezoelectric substrate to cover the interdigital transducer electrodes, and a dielectric passivation layer over the temperature compensation layer. The passivation layer may include an oxide layer configured to have a sound velocity greater than that of the temperature compensation layer to suppress a transverse signal transmission.

Abstract: A surface acoustic wave (SAW) filter package comprises a substrate, one or more trenches formed in the substrate, a SAW filter formed in each trench of the one or more trenches, and a cavity forming layer extending horizontally across the substrate and each trench.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can be configured to generate a wave having a wavelength of L. The acoustic wave device can include a piezoelectric layer, a first layer of an interdigital transducer electrode over the piezoelectric layer, and a second layer of the interdigital transducer over the first layer. The first layer has a first material with a first mass density. The first material has a normalized mechanical loading exchange rate that is normalized by a mechanical loading exchange rate of molybdenum. The first layer has a thickness less than 0.04L multiplied by the normalized mechanical loading exchange rate of the first material. The second layer has a second material with a second mass density smaller than the first mass density.

Abstract: An acoustic wave device is disclosed. the acoustic wave device is configured to generate a wave having a wavelength of L. The acoustic wave device includes a piezoelectric layer a first layer of an interdigital transducer electrode over the piezoelectric layer, and a second layer of the interdigital transducer electrode over the first layer. The first layer has a material with a first mass density of ?. The first mass density of ? is greater than 5000 kg/m3. The first layer has a thickness of t1 less than 0.04 L. The first layer can have the thickness of t1 in a range between 0.0025 L(10220/?) and 0.04 L(10220/?). The second layer has a material with a second mass density that is smaller than the first mass density.

Abstract: A multi-band filter configured to allow signals to pass at multiple frequency bands includes a piezoelectric substrate and a plurality of groups of electrodes disposed on the piezoelectric substrate. Each group forms a respective filter to allow signals to pass at a corresponding frequency band. A first group forms a first filter having a first frequency band and a second group forms a second filter having a second frequency band. The first frequency band is lower than the second frequency band. The filter includes a dielectric film formed to cover at least a part of the piezoelectric substrate and the plurality of groups of electrodes. The filter also includes a passivation film disposed on the dielectric film. The passivation film has a smaller thickness for the first group than for the second group, so as to suppress a spurious response generated in the piezoelectric substrate.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with transverse mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a non-zero tilt angle that provides an improved quality factor as compared to a zero tilt angle. The acoustic wave device is configured to generate a surface acoustic wave having a wavelength L. A total number of fingers of the interdigital transducer electrode is between 50 L and 100 L. A width between a finger of the interdigital transducer electrode and an adjacent finger of interdigital transducer electrode is between 20 L and 40 L.

Abstract: Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode having a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. The interdigital transducer electrode is configured to shift stopband of the acoustic wave device and to reduce a slanted stopband.

Abstract: Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. A thickness of the interdigital transducer electrode is at least 40% of a thickness of the piezoelectric layer, 400 nm, or 0.08? where ? is the wavelength generated by the acoustic wave device.

Abstract: An acoustic wave resonator is disclosed. The acoustic wave resonator can include a plurality of interdigital transducer electrodes and a multilayer piezoelectric substrate (MPS) adjacent the plurality of interdigital transducer electrodes. The MPS includes a first substrate layer of a piezoelectric material, and a second substrate layer of silicon that is bonded to the first layer. The silicon has a cut direction and/or acoustic wave propagation direction that is different from those of a silicon substrate. The silicon substrate has a cut direction and a propagation direction property defined by the silicon cut angle of {100} and the propagation direction <110>.

Abstract: An acoustic wave device is disclosed. The acoustic wave device is configured to generate a surface acoustic wave having a wavelength L. The acoustic wave device can include a piezoelectric layer. The piezoelectric layer has a thickness in a range of 0.1 L to 0.3 L. The acoustic wave device can include an interdigital transducer electrode that is positioned over the piezoelectric layer, and a support substrate that is bonded to the piezoelectric layer such that the piezoelectric layer is positioned between the interdigital transducer electrode and the support substrate. The support substrate has a cut angle configured to provide a velocity of the surface acoustic wave calculated by multiplying the wavelength L by a particular frequency to be greater than 4800 m/s.

Abstract: A surface acoustic wave device can have a piezoelectric layer and at least one interdigital transducer electrode thereon with a trapezoidal shape. This can be useful to fill dead space or voids between nonparallel elements on the layer. For example, an array with ranks of slanted interdigital transducer electrodes may not be aligned with non-slanted elements (e.g., a surface acoustic wave filter). This can leave voids or openings with unused portions of the piezoelectric layer. Trapezoidal elements such as those described here can solve this problem and help suppress transverse modes.

Abstract: Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with transverse mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with hyperbolic mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.