Patents by Inventor Yuya Kuwahara

Yuya Kuwahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250091638
    Abstract: A steering system has a support tube that supports a steering shaft, and a housing that has a cylindrical portion housing a speed reducer. A bearing support member is fitted to an inner circumferential face of the cylindrical portion. A bearing is disposed between an outer circumferential face of the steering shaft and an inner circumferential face of the bearing support member. The bearing support member has an inner circumferential wall that fits to an outer circumferential face of the bearing, an outer circumferential wall that fits to the inner circumferential face of the cylindrical portion, and a coupling wall that couples the inner circumferential wall and the outer circumferential wall in a radial direction. The inner circumferential wall extends from the coupling wall in a same direction as a mounting direction, and the outer circumferential wall extends in an opposite direction from the mounting direction.
    Type: Application
    Filed: March 11, 2022
    Publication date: March 20, 2025
    Applicant: JTEKT CORPORATION
    Inventors: Yu MYOHOJI, Naofumi KAWAMURA, Yasuhiro TANIOKA, Yuya KUWAHARA, Yuichi TOYAMA, Takao NAKAAKI
  • Patent number: 11808649
    Abstract: A magnetic shield includes a divided portion divided into a plurality of parts before attachment to a sensor device. The divided portion is integrated by bringing the plurality of parts close to or in contact with each other during the attachment to the sensor device. The divided portion in an integrated state includes a first shield portion that surrounds a body of a magnetic flux collecting ring from an outer side in a radial direction, and a second shield portion that surrounds a magnetic flux collecting portion of the magnetic flux collecting ring together with a magnetic sensor to extend outward in the radial direction from the first shield portion.
    Type: Grant
    Filed: February 3, 2022
    Date of Patent: November 7, 2023
    Assignee: JTEKT CORPORATION
    Inventor: Yuya Kuwahara
  • Publication number: 20220268650
    Abstract: A magnetic shield includes a divided portion divided into a plurality of parts before attachment to a sensor device. The divided portion is integrated by bringing the plurality of parts close to or in contact with each other during the attachment to the sensor device. The divided portion in an integrated state includes a first shield portion that surrounds a body of a magnetic flux collecting ring from an outer side in a radial direction, and a second shield portion that surrounds a magnetic flux collecting portion of the magnetic flux collecting ring together with a magnetic sensor to extend outward in the radial direction from the first shield portion.
    Type: Application
    Filed: February 3, 2022
    Publication date: August 25, 2022
    Applicant: JTEKT CORPORATION
    Inventor: Yuya KUWAHARA
  • Patent number: 11398508
    Abstract: A first oxide semiconductor thin-fil transistor includes a top gate electrode, a first metal oxide film, and a top gate insulating film between the top gate electrode and the first metal oxide film. A second oxide semiconductor thin-film transistor includes a bottom gate electrode, a second metal oxide film, and a bottom gate insulating film between the bottom gate electrode and the second metal oxide film. A storage capacitor stores a signal voltage to the bottom gate electrode. A first electrode of the storage capacitor includes a part of the bottom gate electrode. A source/drain region of the first oxide semiconductor thin-film transistor is in contact with the bottom gate electrode in a contact hole in the bottom gate insulating layer. Capacitance per unit area of the bottom gate insulating film is smaller than capacitance per unit area of the top gate insulating film.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: July 26, 2022
    Assignees: TIANMA JAPAN, LTD., Wuhan Tianma Micro-Electronics Co., Ltd.
    Inventors: Yuya Kuwahara, Kazushige Takechi
  • Publication number: 20210202540
    Abstract: A first oxide semiconductor thin-fil transistor includes a top gate electrode, a first metal oxide film, and a top gate insulating film between the top gate electrode and the first metal oxide film. A second oxide semiconductor thin-film transistor includes a bottom gate electrode, a second metal oxide film, and a bottom gate insulating film between the bottom gate electrode and the second metal oxide film. A storage capacitor stores a signal voltage to the bottom gate electrode. A first electrode of the storage capacitor includes a part of the bottom gate electrode. A source/drain region of the first oxide semiconductor thin-film transistor is in contact with the bottom gate electrode in a contact hole in the bottom gate insulating layer. Capacitance per unit area of the bottom gate insulating film is smaller than capacitance per unit area of the top gate insulating film.
    Type: Application
    Filed: December 23, 2020
    Publication date: July 1, 2021
    Applicants: Tianma Japan, Ltd., Wuhan Tianma Micro-Electronics Co., Ltd.
    Inventors: Yuya Kuwahara, Kazushige Takechi