Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

Abstract: A reliable semiconductor module and a reliable power conversion device using the semiconductor module are obtained. A semiconductor module includes a heat dissipation member, a semiconductor device, and a thermally conductive insulating resin sheet. The thermally conductive insulating resin sheet connects the heat dissipation member and the semiconductor device. The semiconductor device includes a semiconductor element and a metal wiring member. The metal wiring member is electrically connected to the semiconductor element. The metal wiring member includes a terminal portion protruding outside the semiconductor device. In a surface portion of the semiconductor device, a concave portion is formed outward of a partial region to which the thermally conductive insulating resin sheet is connected. The concave portion is located in a region closer to the heat dissipation member than the terminal portion.

Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

Abstract: A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.

Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

Abstract: This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

Abstract: A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.

Abstract: This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.