Abstract: A thermosensitive part sensing temperature; a temperature sensor for measurement provided in the unit and measuring temperature by contacting the unit with a body to be measured; a temperature detecting part detecting, from when the unit contacts the body, the time when the sensor senses a difference from an initial temperature of the sensor, and a measured temperature of the sensor at that time, and detecting, from when the difference is sensed, a time after a certain length of time and a measured temperature of the sensor at that time; an estimating part estimating, from the time when the difference is sensed and a time after a certain length of time, the time when the thermosensitive part contacts the body, and the measured temperature at that time; and a heat conduction analyzing part estimating the measured temperature based on output information from the temperature detecting part and the estimating part.

Abstract: A film formation device having a high operation rate is provided. The film formation device includes: a film formation chamber (2) in which at least a film formation material (M) and a film formation target (S) are provided, wherein the film formation chamber (2) can be set to a predetermined film formation atmosphere; a hearth liner (23) provided inside the film formation chamber (2) to accommodate the film formation material (M); a heating source (24) provided inside the film formation chamber (2) to heat the film formation material (M) accommodated in the hearth liner (23); and a material supply chamber (3) having a material-filled unit (35) that is filled with the film formation material (M) to supply to the hearth liner (23). The material supply chamber (3) is connected to the film formation chamber (2) via a communication path (36) having a gate valve (37) and can be set to a predetermined pressure atmosphere.

Abstract: A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.

Abstract: A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

Abstract: A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Abstract: A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract: A method of forming a low-k film containing silicon and carbon on a substrate by plasma CVD, includes: supplying gas of a precursor having a Si—R—O—R—Si bond into a reaction space in which a substrate is placed; and exciting the gas in the reaction space, thereby depositing a film on the substrate.