Patents by Inventor Yuya OGINO

Yuya OGINO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor element
    Patent number: 11088512
    Abstract: This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlxGa(1-x)N and a composition change layer made above the nitride semiconductor active layer and made of Alx3Ga(1-x3)N in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: August 10, 2021
    Assignee: Asahi Kasei Kabushiki Kaisha
    Inventors: Kosuke Sato, Motoaki Iwaya, Shinji Yasue, Yuya Ogino
  • NITRIDE SEMICONDUCTOR ELEMENT
    Publication number: 20200287354
    Abstract: This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlxGa(1-x)N and a composition change layer made above the nitride semiconductor active layer and made of Alx3Ga(1-x3)N in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer.
    Type: Application
    Filed: March 3, 2020
    Publication date: September 10, 2020
    Applicant: ASAHI KASEI KABUSHIKI KAISHA
    Inventors: Kosuke SATO, Motoaki IWAYA, Shinji YASUE, Yuya OGINO