Abstract: A deposition method includes: a) depositing a film of a reaction product of a first reaction gas and a second reaction gas that react with each other in the recess; and b) exposing the substrate on which the film is deposited to a plasma generated from a noble gas. a) includes: a1) exposing the substrate to a plasma generated from the noble gas and a modifying gas to adsorb a hydroxyl group on an inner surface of the recess in a predetermined distribution, a2) supplying the first reaction gas to the substrate on which the hydroxyl group is adsorbed, and a3) supplying the second reaction gas to the substrate on which the first reaction gas is adsorbed, thereby causing the first reaction gas to react with the second reaction gas to produce the reaction product.

Abstract: A substrate processing method includes: preparing a substrate having a target film on a surface; forming a barrier film that covers the target film; supplying a deuterium gas and an oxygen gas to the target film covered with the barrier film, thereby implanting deuterium into the target film; and removing the barrier film after the deuterium is implanted into the target film.

Abstract: Disclosed is a substrate processing method for processing a substrate in a processing vessel. In the substrate processing method, the following steps (a) through (d) are performed together (a) heating the substrate to a set processing temperature, (b) supplying deuterium into the processing vessel, (c) supplying oxygen into the processing vessel, and (d) discharging the deuterium and the oxygen in the processing vessel so that a pressure inside the processing vessel becomes a set processing pressure.

Abstract: A film forming apparatus according to one aspect of the present disclosure includes a processing chamber, a gas supply pipe extending vertically in the processing chamber and including gas holes, and a boat configured to accommodate substrates including product substrates in a vertical direction in the processing chamber. The film forming apparatus forms a film on each of the substrates by use of gas supplied from the gas holes, each of the substrates corresponding to respective one or more of gas holes. The gas holes that are arranged in a height range in which the product substrates are situated include first gas holes that are opened at a same height, the first gas holes being oriented at respective angles such that respective imaginary lines passing through the first holes and a central axis of the gas supply pipe are at a same angle relative to an imaginary line.

Abstract: A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.

Abstract: A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.

Abstract: A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container. The film forming method includes: storing the raw material gas in a reservoir; adsorbing the raw material gas on the substrate by supplying the raw material gas stored in the reservoir to the substrate; and reacting the raw material gas and the reactive gas with each other by supplying the reactive gas to the substrate on which the raw material gas is adsorbed to generate the reaction product; wherein the storing, the adsorbing, and the reacting are repeated a plurality of times, while a condition for the storing is changed at least once.

Abstract: A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container. The film forming method includes: storing the raw material gas in a reservoir; adsorbing the raw material gas on the substrate by supplying the raw material gas stored in the reservoir to the substrate; and reacting the raw material gas and the reactive gas with each other by supplying the reactive gas to the substrate on which the raw material gas is adsorbed to generate the reaction product; wherein the storing, the adsorbing, and the reacting are repeated a plurality of times, while a condition for the storing is changed at least once.