Abstract: The present invention provides a supporting hook structure, comprising a sleeve, a fixing rod, a first limit unit, a hook and a fixing device. The fixing rod is connected to the side surface of the sleeve. The hook body is connected to one end of the sleeve. The first limit unit is arranged on the side surface of the sleeve and adjacent to the hook body. The first limit unit makes the hook body rotates with the axis direction of the sleeve as a rotation axis. The fixing device is connected to the other end of the sleeve to fix the rotating position of the hook body. Through the above, the hook part enters the proximal thigh from a surgical entrance and the hook part rotates to make the hook part abut against the proximal femur to complete the positioning and fixation of the femur hook structure to the femur.

Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.

Abstract: A modified cutinase is disclosed. The cutinase has the modified amino acid sequence of SEQ ID NO: 2, wherein the modification is a substitution of asparagine at position 181 with alanine, or substitutions of asparagine at position 181 with alanine and phenylalanine at position 235 with leucine. The modified enzyme has improved PET-hydrolytic activity, and thus, the high-activity PET hydrolase is obtained, and the industrial application value of the PET hydrolase is enhanced.

Abstract: An electrical connector assembly includes: a bracket; and at least one transmission assembly mounted to the bracket and including an internal printed circuit board (PCB), a board-mount connector connected to a first row of conductive pads disposed at a bottom end portion of the PCB, and a plug-in connector connected to a second row of conductive pads disposed at a front end portion of the PCB, wherein the PCB has a third row of conductive pads disposed at a rear end portion thereof.

Abstract: An example electronic device includes a controller to determine a user touch detection by a power adaptor coupled to the electronic device to operate the electronic device in an AC power mode. The power adaptor may comprise a proximity sensor to detect a user touch for detachment of the power adaptor from the electronic device, and a control circuit to operate a configuration pin in a low output mode to signal user touch detection. The controller may initiate central processing unit (CPU) throttling to reduce power consumption by the electronic device. The controller may further stop CPU throttling in response to detecting that the power adaptor has been detached from the electronic device. Further, the controller may switch the electronic device to a DC power mode to operate using DC power supplied by a battery of the electronic device in response to power adaptor detachment.

Abstract: A method for producing ?-aminobutyric acid includes cultivating, in a culture medium containing glutamic acid or a salt thereof, a probiotic composition including at least one lactic acid bacterial strain selected from the group consisting of Bifidobacterium breve CCFM1025 which is deposited at the Guangdong Microbial Culture Collection Center under an accession number GDMCC 60386, Lactobacillus acidophilus TYCA06, Lactobacillus plantarum LPL28, and Bifidobacterium longum subsp. infantis BLI-02 which are deposited at the China General Microbiological Culture Collection Center respectively under accession numbers CGMCC 15210, CGMCC 17954, and CGMCC 15212, Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection under an accession number CCTCC M 2011127, and combinations thereof.

Abstract: A method for measuring a thickness of a thin film layer disposed on a piece of glass is implemented using a computer device that stores a thin film image of the thin film layer, a surface dataset associated with a surface of the thin film layer, and a plurality of reference parameter sets each being associated with a specific thickness of the thin film layer, the method including: generating a spectral image dataset that includes spectral data associated with different pixels of the thin film image using a spectral transformation matrix; performing regression analysis on the surface dataset and the spectral image dataset, so as to obtain a thickness parameter set including a plurality of thickness parameters; and determining a thickness of the thin film layer using the thickness parameter set and the plurality of reference parameter sets.

Abstract: A data storage device includes a controller, a data storage unit, a microprocessor, and a network communication unit. The controller includes a firmware. The data storage unit includes a first system storage sector and a second system storage sector. The first system storage sector stores an original operating system, and the second system storage sector stores a backup operating system. When the data storage device receives an operating system differential file from a cloud management platform, the firmware updates the backup operating system in the second system storage sector to obtain a new version of backup operating system. Accordingly, the backup operating system of the data storage device can be quickly updated by downloading a small file size of the operating system differential file so as to enhance the convenience for the updating of the backup operating system.

Abstract: A method of fabricating a semiconductor device includes forming a memory gate and a hard mask layer on the memory gate, forming a select gate on a sidewall of the memory gate and the hard mask layer, performing a selective oxidation process to form an oxide layer on the hard mask layer and the select gate, wherein a portion of the oxide layer on the select gate is thicker than a portion of the oxide layer on the hard mask layer, and removing the oxide layer on the hard mask layer and the hard mask layer to expose a top surface of the memory gate.

Abstract: A method of fabricating a semiconductor device includes forming a memory gate and a hard mask layer on the memory gate, forming a select gate on a sidewall of the memory gate and the hard mask layer, performing a selective oxidation process to form an oxide layer on the hard mask layer and the select gate, wherein a portion of the oxide layer on the select gate is thicker than a portion of the oxide layer on the hard mask layer, and removing the oxide layer on the hard mask layer and the hard mask layer to expose a top surface of the memory gate.

Abstract: A method of manufacturing a semiconductor device includes providing a silicon substrate with multiple layers formed on a front side and a backside, wherein at least a dielectric layer is formed on the backside of the silicon substrate; defining isolation regions and active regions at the front side of the silicon substrate, wherein the active regions are separated by the isolation regions; treating the multiple layers formed at the front side and the backside of the silicon substrate, so as to remain the dielectric layer as an outermost layer exposed at the backside of the silicon substrate; and depositing a polysilicon layer on the isolation regions and the active regions at the front side of the silicon substrate.

Abstract: The present invention provides a flash cell structure and a method of fabricating the same. The flash cell structure includes a semiconductor substrate, a stacked gate structure disposed on the semiconductor substrate, a first doped region disposed in the semiconductor substrate at a side of the stacked gate structure, a first dielectric layer, a second dielectric layer, and an erase gate. The stacked gate structure includes a floating gate insulated from the semiconductor substrate and a control gate disposed on the floating gate and insulated from the floating gate. The first dielectric layer is disposed on a sidewall of the floating gate. The second dielectric layer is disposed on the first doped region. A thickness of the first dielectric layer is less than a thickness of the second dielectric layer.

Abstract: A semiconductor fabricating apparatus includes a reaction chamber, a first gas pipeline, and a second gas pipeline. The first gas pipeline includes a first cleaning gas pipeline for providing a first cleansing gas to the reaction chamber in a cleansing process, and a second cleansing gas pipeline for providing a second cleansing gas to the reaction chamber in the cleansing process. The first cleansing gas pipeline and the second cleansing gas pipeline are connected in parallel. The second gas pipeline provides a reactive gas to the reaction chamber in a fabricating process. The first gas pipeline and the second gas pipeline are connected in parallel.

Abstract: The present invention discloses a clock generator circuit for generating an output clock signal. The clock generator circuit includes: a random frequency code generator for generating a frequency code randomly, wherein the random frequency code generator is clocked by a first clock signal; an accumulator electrically connected to the random frequency code generator, for generating a selection code by accumulating the frequency code, wherein the accumulator is clocked by the first clock signal; a first multiplexer electrically connected to the accumulator, for selecting one of a plurality of reference clock signals as the first clock signal according to the selection code; and a toggle circuit electrically connected to the first multiplexer, being clocked by the first clock signal for generating the output clock signal.

Abstract: The present invention discloses a clock generator circuit for generating an output clock signal. The clock generator circuit includes: a random frequency code generator for generating a frequency code randomly, wherein the random frequency code generator is clocked by a first clock signal; an accumulator electrically connected to the random frequency code generator, for generating a selection code by accumulating the frequency code, wherein the accumulator is clocked by the first clock signal; a first multiplexer electrically connected to the accumulator, for selecting one of a plurality of reference clock signals as the first clock signal according to the selection code; and a toggle circuit electrically connected to the first multiplexer, being clocked by the first clock signal for generating the output clock signal.