Abstract: Provided herein are a lappaconitine derivative of formula (I), and a preparation and application thereof.

Abstract: A pollen polysaccharide extract prepared by the following method: mixing rape pollen with water, then heating and stirring for extraction, filtering, mixing filtrates, adding chitosan to a resulting filtrate to obtain a liquid to be clarified, keeping the liquid to be clarified at 60-80° C. for at least 1 h, cooling and allowing to stand, and performing solid-liquid separation to obtain a liquid, namely the pollen polysaccharide extract.

Abstract: A pollen polysaccharide extract prepared by the following method: mixing rape pollen with water, then heating and stirring for extraction, filtering, mixing filtrates, adding chitosan to a resulting filtrate to obtain a liquid to be clarified, keeping the liquid to be clarified at 60-80° C. for at least 1 h, cooling and allowing to stand, and performing solid-liquid separation to obtain a liquid, namely the pollen polysaccharide extract.

Abstract: Provided herein are a lappaconitine derivative of formula (I), and a preparation and application thereof.

Abstract: Embodiments of the present specification disclose data monitoring methods, apparatuses, electronic devices, and computer readable storage media. In an embodiment, a method comprising: receiving, from a network device, data at a frequency range higher than a predetermined frequency; determining whether the data belongs to a currently monitored data interval; in response to determining that the data does not belong to the currently monitored data interval, determining whether the data belongs to an abnormal data interval of a plurality of abnormal data intervals; in response to determining that the data belongs to the abnormal data interval, updating the abnormal data interval based on the data; and updating the currently monitored data interval to be the abnormal data interval in response to determining that the abnormal data interval satisfies a predetermined condition.

Abstract: Embodiments of the present specification disclose data monitoring methods, apparatuses, electronic devices, and computer readable storage media. In an embodiment, a method comprising: receiving, from a network device, data at a frequency range higher than a predetermined frequency; determining whether the data belongs to a currently monitored data interval; in response to determining that the data does not belong to the currently monitored data interval, determining whether the data belongs to an abnormal data interval of a plurality of abnormal data intervals; in response to determining that the data belongs to the abnormal data interval, updating the abnormal data interval based on the data; and updating the currently monitored data interval to be the abnormal data interval in response to determining that the abnormal data interval satisfies a predetermined condition.

Abstract: A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer and N? drift layer. There are active cells and dummy cells on top of the device. The active cell and dummy cell are separated by gate trench. The gate trench is formed by polysilicon and gate oxide layer. There are N+ region and P+ region in active cells, and they are connected to metal emitter layer through the window in the insulation layer. There are P-well regions in both active cells and dummy cells. The P-well regions in active cells are continuous and connected to emitter electrode through P+ region. The P-well regions in dummy cells are discontinuous and electrically floating.

Abstract: A method to make a semiconductor device, a first SiO2 layer and a first Si3N4 layer are sequentially formed on the semiconductor substrate. The first SiO2 layer and the first Si3N4 layer are then patterned as etching mask to form a trench in a semiconductor substrate by a trench etching process. After this, a second SiO2 layer and a second Si3N4 layer are formed conformal onto the substrate. Anisotropic etching is then performed to remove the second Si3N4 and second SiO2 layer except on the trench sidewall. Then a thermal oxidation process is done to grow oxide only in trench bottom and at trench top corner. The radius of curvature of trench bottom and trench top corner is increased at the same time by this thermal oxidation process.

Abstract: A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer, N-drift layer and N-type CS layer within the N-drift layer near the top side. Multiple trench structures are formed by polysilicon core and gate oxide layer near the front side. There are active cells and plugged cells on top of the device. The polysilicon cores of the trenches in the active cells are connected to the gate electrode, and the polysilicon cores of the trenches in the plugged cells are connected to the emitter electrode. There are N+ region and P+ region in active cells, and they are connected to metal emitter layer through the window in the insulation layer. There are P-well regions in both active cells and plugged cells. The P-well regions in active cells are continuous and connected to emitter electrode through P+ region. The P-well regions in plugged cells are divided by N-drift layer, forming discontinuous P-type regions along the direction of trenches.

Abstract: A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer, N-drift layer and N-type CS layer within the N-drift layer near the top side. Multiple trench structures are formed by polysilicon core and gate oxide layer near the front side. There are active cells and plugged cells on top of the device. The polysilicon cores of the trenches in the active cells are connected to the gate electrode, and the polysilicon cores of the trenches in the plugged cells are connected to the emitter electrode. There are N+ region and P+ region in active cells, and they are connected to metal emitter layer through the window in the insulation layer. There are P-well regions in both active cells and plugged cells. The P-well regions in active cells are continuous and connected to emitter electrode through P+ region. The P-well regions in plugged cells are divided by N-drift layer, forming discontinuous P-type regions along the direction of trenches.

Abstract: A method to make a semiconductor device, a first SiO2 layer and a first Si3N4 layer are sequentially formed on the semiconductor substrate. The first SiO2 layer and the first Si3N4 layer are then patterned as etching mask to form a trench in a semiconductor substrate by a trench etching process. After this, a second SiO2 layer and a second Si3N4 layer are formed conformal onto the substrate. Anisotropic etching is then performed to remove the second Si3N4 and second SiO2 layer except on the trench sidewall. Then a thermal oxidation process is done to grow oxide only in trench bottom and at trench top corner. The radius of curvature of trench bottom and trench top corner is increased at the same time by this thermal oxidation process.

Abstract: A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer and N- drift layer. There are active cells and dummy cells on top of the device. The active cell and dummy cell are separated by gate trench. The gate trench is formed by polysilicon and gate oxide layer. There are N+ region and P+ region in active cells, and they are connected to metal emitter layer through the window in the insulation layer. There are P-well regions in both active cells and dummy cells. The P-well regions in active cells are continuous and connected to emitter electrode through P+ region. The P-well regions in dummy cells are discontinuous and electrically floating.