Abstract: A glass crack prevention laminate has a glass crack prevention adhesive layer having a dynamic storage elastic modulus G? of not larger than 1×107 Pa at 20° C., and a liquid crystal display optical film laminated on a surface of the glass crack prevention adhesive layer. Particularly, the liquid crystal display optical film is made of a polarizing plate or of a laminate of a polarizing plate and another optical layer. The thickness of the glass crack prevention adhesive layer is selected to be in a range of from 0.1 mm to 5 mm. The glass crack prevention adhesive layer has removability. The adhesive agent-including optical film having the configuration can be directly mounted on a liquid crystal panel so that the glass crack prevention adhesive layer is provided on an inner side. Thus, a liquid crystal display device can be provided.

Abstract: A glass crack prevention laminate has a glass crack prevention adhesive layer having a dynamic storage elastic modulus G′ of not larger than 1×107 Pa at 20° C., and a liquid crystal display optical film laminated on a surface of the glass crack prevention adhesive layer. Particularly, the liquid crystal display optical film is made of a polarizing plate or of a laminate of a polarizing plate and another optical layer. The thickness of the glass crack prevention adhesive layer is selected to be in a range of from 0.1 mm to 5 mm. The glass crack prevention adhesive layer has removability. The adhesive agent-including optical film having the configuration can be directly mounted on a liquid crystal panel so that the glass crack prevention adhesive layer is provided on an inner side. Thus, a liquid crystal display device can be provided.

Abstract: A sheet for holding and protecting semiconductor wafers which can closely follow up even a wafer surface having large roughness is disclosed. The hot-melt sheet for holding and protecting semiconductor is applied to a surface of a semiconductor wafer to thereby hold and protect the semiconductor wafer in processing the semiconductor wafer. The sheet comprises a hot-melt layer A having a melting point of 105° C. or below. A pressure-sensitive adhesive layer B may be formed on one surface of the hot-melt layer A. A reinforcing layer C having a melting point higher by 20° C. or more than that of hot-melt layer A may further be formed on one surface of the hot-melt layer A, provided that when the pressure-sensitive adhesive layer B is formed on one surface of the hot-melt layer A, the reinforcing layer C is formed on the opposite surface thereof.

Abstract: A dicing-die bonding film comprising an ultraviolet-transmitting substrate having provided thereon an ultraviolet-curable pressure-sensitive adhesive layer and an adhesive layer in this order, the pressure-sensitive adhesive layer having been partly ultraviolet-cured to have cured parts and uncured parts. The film has a well-balanced combination of a holding power for supporting a semiconductor wafer during dicing and release properties for enabling cut chips to be easily released together with the adhesive layer so that even large-sized chips as larger than 10 mm.times.10 mm can easily be picked up.

Abstract: A dicing-die bonding film comprising an ultraviolet-transmitting substrate having provided thereon an ultraviolet-curable pressure-sensitive adhesive layer and an adhesive layer in this order, the pressure-sensitive adhesive layer having been partly ultraviolet-cured to have cured parts and uncured parts. The film has a well-balanced combination of a holding power for supporting a semiconductor wafer during dicing and release properties for enabling cut chips to be easily released together with the adhesive layer so that even large-sized chips as larger than 10 mm.times.10 mm can easily be picked up.