Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A method of producing semiconductor devices which have an excellent separability from a metal mold after resin encapsulation and thus eliminates the need to clean the metal mold. A metal mold for producing such semiconductor devices is also provided. According to the method of the present invention, the metal mold is first opened, and two separation sheets are disposed on dividing surfaces including cavity forming surfaces of a first metal mold and a second metal mold. A substrate is then placed on one of the separation sheets, with its semiconductor chip formed surface facing the second metal mold. An encapsulation resin is provided on the substrate placed on one of the separation sheets. The metal mold in a heated state is closed and pressed to form a resin layer for encapsulating electrodes formed on the substrate. The metal mold is again opened, and the resin-encapsulated substrate is taken out of the metal mold.

Abstract: A mold for press-molding a resin package body includes a lower mold and an upper mold, wherein the upper mold includes a press plate held in a tiltable manner with respect to a press head used for urging the upper mold against the lower mold and a lock mechanism for locking the press plate. The lower mold includes an inner die carrying a semiconductor device and a resin tablet and an outer die surrounding the inner die in a manner movable up and down with respect to the inner die. In operation, the press plate is first engaged with the outer die in the unlocked state to achieve an exact parallelism with respect to the inner die, and after locking the press plate and melting the resin tablet, the press plate is urged further toward the inner die while simultaneously lowering the outer die such that the space formed by the lower die, outer die and the press plate for accommodating a semiconductor chip is collapsed.

Abstract: In a semiconductor device of the present invention and a production method thereof, an electronic circuit is provided in a semiconductor substrate, the electronic circuit having terminals. An internal wiring pattern is provided in the substrate, the internal wiring pattern being connected to the electronic circuit terminals. A protective layer is provided on the substrate, the protective layer covering the substrate. Vias are provided on the substrate so as to project from the protective layer, the vias being connected to the internal wiring pattern at arbitrary positions on the substrate. An external wiring pattern is provided on the protective layer, the external wiring pattern being connected to the vias. Projection electrodes are connected to the external wiring pattern, the projection electrodes having a predetermined height above the external wiring pattern.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.