Patents by Inventor Yuzo Irie

Yuzo Irie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 6232209
    Abstract: A gate electrode includes a polycrystalline silicon layer, a barrier layer and a metal layer. The metal layer and barrier layer includes for example W and RuO2 layers, respectively. In forming the gate electrode, the metal layer and barrier layer are etched using at least one of the barrier layer and polycrystalline silicon layer as an etching stopper.
    Type: Grant
    Filed: November 15, 1999
    Date of Patent: May 15, 2001
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Nobuo Fujiwara, Takahiro Maruyama, Shigenori Sakamori, Akemi Teratani, Satoshi Ogino, Kazuyuki Ohmi, Yuzo Irie