Patents by Inventor Yuzo Kataoka

Yuzo Kataoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with buried electrode
    Patent number: 5306934
    Abstract: A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.
    Type: Grant
    Filed: January 17, 1992
    Date of Patent: April 26, 1994
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yuzo Kataoka, Toshihiko Ichise, Keiji Ishizuka, Tetsuo Asaba
  • Semiconductor device with isolating groove containing single crystalline aluminum wiring
    Patent number: 5200639
    Abstract: A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region.
    Type: Grant
    Filed: May 29, 1991
    Date of Patent: April 6, 1993
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keiji Ishizuka, Yuzo Kataoka, Toshihiko Ichise, Hidekazu Takahashi, Hayao Ohzu