Patents by Inventor Yuzo Kohda
Yuzo Kohda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20090145555Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).Type: ApplicationFiled: December 3, 2008Publication date: June 11, 2009Applicant: CANON KABUSHIKI KAISHAInventors: TADASHI SAWAYAMA, YASUSHI FUJIOKA, MASAHIRO KANAI, SHOTARO OKABE, YUZO KOHDA, TADASHI HORI, KOICHIRO MORIYAMA, HIROYUKI OZAKI, YUKITO AOTA, ATSUSHI KOIKE, MITSUYUKI NIWA, YASUYOSHI TAKAI, HIDETOSHI TSUZUKI
-
Publication number: 20090114155Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).Type: ApplicationFiled: December 3, 2008Publication date: May 7, 2009Applicant: CANON KABUSHIKI KAISHAInventors: Tadashi Sawayama, Yasushi Fujioka, Masahiro Kanai, Shotaro Okabe, Yuzo Kohda, Tadashi Hori, Koichiro Moriyama, Hiroyuki Ozaki, Yukito Aota, Atsushi Koike, Mitsuyuki Niwa, Yasuyoshi Takai, Hidetoshi Tsuzuki
-
Publication number: 20090095420Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).Type: ApplicationFiled: December 3, 2008Publication date: April 16, 2009Applicant: CANON KABUSHIKI KAISHAInventors: Tadashi Sawayama, Yasushi Fujioka, Masahiro Kanai, Shotaro Okabe, Yuzo Kohda, Tadashi Hori, Koichiro Moriyama, Hiroyuki Ozaki, Yukito Aota, Atsushi Koike, Mitsuyuki Niwa, Yasuyoshi Takai, Hidetoshi Tsuzuki
-
Publication number: 20090084500Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).Type: ApplicationFiled: December 2, 2008Publication date: April 2, 2009Applicant: CANON KABUSHIKI KAISHAInventors: Tadashi Sawayama, Yasushi Fujioka, Masahiro Kanai, Shotaro Okabe, Yuzo Kohda, Tadashi Hori, Koichiro Moriyama, Hiroyuki Ozaki, Yukito Aota, Atsushi Koike, Mitsuyuki Niwa, Yasuyoshi Takai, Hidetoshi Tsuzuki
-
Publication number: 20080014345Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).Type: ApplicationFiled: July 11, 2007Publication date: January 17, 2008Applicant: CANON KABUSHIKI KAISHAInventors: TADASHI SAWAYAMA, YASUSHI FUJIOKA, MASAHIRO KANAI, SHOTARO OKABE, YUZO KOHDA, TADASHI HORI, KOICHIRO MORIYAMA, HIROYUKI OZAKI, YUKITO AOTA, ATSUSHI KOIKE, MITSUYUKI NIWA, YASUYOSHI TAKAI, HIDETOSHI TSUZUKI
-
Publication number: 20050161077Abstract: An apparatus for efficiently and continuously mass-producing a photovoltaic element by a plasma CVD method having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. The apparatus has a first chamber where raw material gas flows from top to bottom. A second chamber is connected to the first chamber by a separating path and causes the raw material gas to flow from bottom to top along the movement direction of the long substrate.Type: ApplicationFiled: July 23, 2003Publication date: July 28, 2005Applicant: CANON KABUSHIKI KAISHAInventors: Shotaro Okabe, Yasushi Fujioka, Masahiro Kanai, Akira Sakai, Tadashi Sawayama, Yuzo Kohda, Tadashi Hori, Takahiro Yajima
-
Publication number: 20040161533Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).Type: ApplicationFiled: February 12, 2004Publication date: August 19, 2004Inventors: Tadashi Sawayama, Yasushi Fujioka, Masahiro Kanai, Shotaro Okabe, Yuzo Kohda, Tadashi Hori, Koichiro Moriyama, Hiroyuki Ozaki, Yukito Aota, Atsushi Koike, Mitsuyuki Niwa, Yasuyoshi Takai, Hidetoshi Tsuzuki
-
Publication number: 20030164225Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).Type: ApplicationFiled: April 20, 1999Publication date: September 4, 2003Inventors: TADASHI SAWAYAMA, YASUSHI FUJIOKA, MASAHIRO KANAI, SHOTARO OKABE, YUZO KOHDA, TADASHI HORI, KOICHIRO MORIYAMA, HIROYUKI OZAKI, YUKITO AOTA, ATSUSHI KOIKE, MITSUYUKI NIWA, YASUYOSHI TAKAI, HIDETOSHI TSUZUKI
-
Publication number: 20030124819Abstract: The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency.Type: ApplicationFiled: March 1, 2002Publication date: July 3, 2003Inventors: Shotaro Okabe, Yasushi Fujioka, Masahiro Kanai, Akira Sakai, Tadashi Sawayama, Yuzo Kohda, Tadashi Hori, Takahiro Yajima
-
Patent number: 6530341Abstract: A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment.Type: GrantFiled: February 25, 1999Date of Patent: March 11, 2003Assignee: Canon Kabushiki KaishaInventors: Yuzo Kohda, Shotaro Okabe, Masahiro Kanai, Akira Sakai, Tadashi Hori, Tomonori Nishimoto, Takahiro Yajima
-
Patent number: 6399411Abstract: A method for forming a non-single-crystal semiconductor thin film and a photovoltaic device using an apparatus, which has a film deposition chamber with a film-forming space surrounded by a film deposition chamber wall and a belt-like substrate. An external chamber surrounding the deposition chamber wall is provided in the apparatus. While the belt-like substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the belt-like substrate. A cooling mechanism and a temperature-increasing mechanism covering a part of an outside surface of the deposition chamber wall provide temperature control.Type: GrantFiled: June 15, 2000Date of Patent: June 4, 2002Assignee: Canon Kabushiki KaishaInventors: Tadashi Hori, Shotaro Okabe, Akira Sakai, Yuzo Kohda, Takahiro Yajima
-
Patent number: 6368944Abstract: The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency.Type: GrantFiled: September 18, 2000Date of Patent: April 9, 2002Assignee: Canon Kabushiki KaishaInventors: Shotaro Okabe, Yasushi Fujioka, Masahiro Kanai, Akira Sakai, Tadashi Sawayama, Yuzo Kohda, Tadashi Hori, Takahiro Yajima
-
Patent number: 6313430Abstract: A high frequency plasma processing apparatus and a high frequency plasma processing method according to the invention can suitably be used for uniformly forming on a substrate a deposition film over a large area. The apparatus and the related method solve the problem wherein high frequency power supplied to a known plasma processing apparatus can become distorted to produce harmonics and give rise to difficulty in correctly reading the incident and reflected powers and realizing an accurate matching when a VHF is used in order to raise the processing rate.Type: GrantFiled: February 26, 1999Date of Patent: November 6, 2001Assignee: Canon Kabushiki KaishaInventors: Yasushi Fujioka, Shotaro Okabe, Masahiro Kanai, Akira Sakai, Tadashi Sawayama, Yuzo Kohda
-
Patent number: 6271055Abstract: A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor while decreasing the film forming rate thereof and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor.Type: GrantFiled: March 9, 1998Date of Patent: August 7, 2001Assignee: Canon Kabushiki KaishaInventors: Takahiro Yajima, Yasushi Fujioka, Shotaro Okabe, Masahiro Kanai, Hirokazu Ohtoshi, Akira Sakai, Tadashi Sawayama, Yuzo Kohda
-
Patent number: 6162988Abstract: The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency.Type: GrantFiled: September 4, 1997Date of Patent: December 19, 2000Assignee: Canon Kabushiki KaishaInventors: Shotaro Okabe, Yasushi Fujioka, Masahiro Kanai, Akira Sakai, Tadashi Sawayama, Yuzo Kohda, Tadashi Hori, Takahiro Yajima
-
Patent number: 6159763Abstract: There is provided a method of forming a photovoltaic element, in which a p-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure, in which in a plasma discharge space, the surface area of a cathod electrode in a plasma discharge space is larger than the sum of surface areas of a belt-like member and an anode electrode, a potential of said cathod electrode at the time of excitation of glow discharge is positive relative to the belt-like member and the anode electrode, and a separator electrode partially constituting the cathod electrode is configured to have a form of a fin or a block, and an n-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure of a capacitive-coupling, parallel-plate type.Type: GrantFiled: September 10, 1997Date of Patent: December 12, 2000Assignee: Canon Kabushiki KaishaInventors: Akira Sakai, Yasushi Fujioka, Shotaro Okabe, Masahiro Kanai, Yuzo Kohda, Tadashi Hori, Takahiro Yajima
-
Patent number: 6159300Abstract: An apparatus for forming a non-single-crystal semiconductor thin film comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a beltlike substrate, and an external chamber surrounding the deposition chamber wall is provided. While the beltlike substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the beltlike substrate. A cooling mechanism and a temperature-increasing mechanism are provided to cover a part of an outside surface of the deposition chamber wall. An apparatus for forming a non-single-crystal semiconductor thin film where the gas supply device comprises a gas manifold set apart from the deposition chamber wall is another embodiment.Type: GrantFiled: December 15, 1997Date of Patent: December 12, 2000Assignee: Canon Kabushiki KaishaInventors: Tadashi Hori, Shotaro Okabe, Akira Sakai, Yuzo Kohda, Takahiro Yajima
-
Patent number: 6153013Abstract: The deposited-film-forming apparatus of the present invention is an apparatus for forming deposited films while continuously passing a belt-like member through the insides of a plurality of vacuum chambers connected via connecting members and superposingly forming a plurality of different thin films on the surface of the belt-like member by plasma-assisted CVD, wherein the vacuum chambers are fixed to a stand for supporting the vacuum chambers, and a mechanism for relaxing stress acting in the transport direction of the belt-like member, generated in the vacuum chambers by the action of expansion and contraction due to thermal expansion of the vacuum chambers, is provided between each vacuum chamber and each connecting member.Type: GrantFiled: February 14, 1997Date of Patent: November 28, 2000Assignee: Canon Kabushiki KaishaInventors: Akira Sakai, Shotaro Okabe, Masahiro Kanai, Yuzo Kohda, Tadashi Hori, Tomonori Nishimoto, Takahiro Yajima
-
Patent number: 5927994Abstract: A method of manufacturing thin films by plasma CVD is described. This method comprises supplying power to a power electrode in a way such that a self-bias upon plasma discharge of the power applying electrode, which is situated in a plasma discharge space, is a positive potential relative to a ground electrode.Type: GrantFiled: January 13, 1997Date of Patent: July 27, 1999Assignee: Canon Kabushiki KaishaInventors: Yuzo Kohda, Shotaro Okabe, Masahiro Kanai, Akira Sakai, Tadashi Hori, Tomonori Nishimoto, Takahiro Yajima
-
Patent number: 5897332Abstract: A method for manufacturing a photoelectric conversion element containing at least one pin junction, wherein a diffusion preventing layer is provided between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, and the diffusion preventing layer is deposited such that deposition temperature differs in its thickness direction.Type: GrantFiled: September 23, 1996Date of Patent: April 27, 1999Assignee: Canon Kabushiki KaishaInventors: Tadashi Hori, Shotaro Okabe, Masahiro Kanai, Akira Sakai, Yuzo Kohda, Tomonori Nishimoto, Takahiro Yajima