Abstract: A semiconductor device includes: a semiconductor substrate that has an integrated circuit; a plurality of electrodes that is formed on the semiconductor substrate, the plurality of the electrodes being electrically coupled to the integrated circuit; a passivation film that is formed on the semiconductor substrate, the passivation film having an opening on at least a part of one of the plurality of electrodes; a resin protrusion that is disposed on the passivation film; and a plurality of wiring lines that extend to a surface of the resin protrusion, each of the plurality of wiring lines extending from one of the plurality of the electrodes, a first portion of each of the plurality of wiring lines being positioned at an uppermost edge of the resin protrusion, a second portion of each of the plurality of wiring lines being positioned between one of the plurality of electrodes and the uppermost edge of the resin protrusion, a width of the first portion of each of the plurality of wiring lines being narrower than

Abstract: A semiconductor device includes: a semiconductor substrate that has an integrated circuit; a plurality of electrodes that is formed on the semiconductor substrate, the plurality of the electrodes being electrically coupled to the integrated circuit; a passivation film that is formed on the semiconductor substrate, the passivation film having an opening on at least a part of one of the plurality of electrodes; a resin protrusion that is disposed on the passivation film; and a plurality of wiring lines that extend to a surface of the resin protrusion, each of the plurality of wiring lines extending from one of the plurality of the electrodes, a first portion of each of the plurality of wiring lines being positioned at an uppermost edge of the resin protrusion, a second portion of each of the plurality of wiring lines being positioned between one of the plurality of electrodes and the uppermost edge of the resin protrusion, a width of the first portion of each of the plurality of wiring lines being narrower than

Abstract: An electronic device includes: a semiconductor chip that includes an integrated circuit, a plurality of electrodes electrically connected to the integrated circuit, and a passivation film formed in a manner that at least a portion of each of the plurality of electrodes is exposed; a resin layer that is formed on the passivation film; a plurality of wirings, each of the plurality of wirings extending from a top surface of each of the plurality of electrodes to a top surface of the resin layer and electrically connected to each of the plurality of electrodes, respectively; a wiring substrate that has a wiring pattern opposing to and electrically connected to portions of the plurality of wirings above the resin layer; and a hardened adhesive resin that is placed between the semiconductor chip and the wiring substrate, wherein the adhesive resin internally has a residual stress that is generated by contraction at the time of hardening the adhesive resin, and a portion of the adhesive resin is disposed between a p