Patents by Inventor Yuzo Ohishi

Yuzo Ohishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11049739
    Abstract: An ashing apparatus includes a light irradiating unit configured to irradiate, to a substrate having an organic film formed on a surface thereof, processing light for ashing the organic film; a posture changing unit configured to change a posture of the substrate with respect to the light irradiating unit; and a control unit. The control unit performs: a first processing of controlling the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a first posture to a second posture; and a second processing of controlling, after the first processing, the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a third posture different from the first posture to a fourth posture.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: June 29, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takaya Kikai, Yuzo Ohishi
  • Publication number: 20210066098
    Abstract: A substrate processing apparatus 1 includes a rotating/holding unit 30 configured to hold and rotate a wafer W having an organic film on a front surface Wa thereof; a light irradiating unit 40 configured to irradiate light for aching of the organic film to the front surface; a gas flow forming unit 50 configured to form a gas flow of an oxygen-containing gas which passes between the wafer W and the light irradiating unit 40; an irradiation control unit 114 configured to irradiate the light to the front surface in a state that the gas flow is formed between the wafer W and the light irradiating unit 40; and a rotation control unit 115 configured to rotate the wafer W in a state that the gas flow is formed between the wafer W and the light irradiating unit 40 and the light is irradiated to the front surface.
    Type: Application
    Filed: November 13, 2020
    Publication date: March 4, 2021
    Inventors: Takaya Kikai, Yuzo Ohishi
  • Patent number: 10867813
    Abstract: A substrate processing apparatus 1 includes a rotating/holding unit 30 configured to hold and rotate a wafer W having an organic film on a front surface Wa thereof; a light irradiating unit 40 configured to irradiate light for aching of the organic film to the front surface; a gas flow forming unit 50 configured to form a gas flow of an oxygen-containing gas which passes between the wafer W and the light irradiating unit 40; an irradiation control unit 114 configured to irradiate the light to the front surface in a state that the gas flow is formed between the wafer W and the light irradiating unit 40; and a rotation control unit 115 configured to rotate the wafer W in a state that the gas flow is formed between the wafer W and the light irradiating unit 40 and the light is irradiated to the front surface.
    Type: Grant
    Filed: November 12, 2018
    Date of Patent: December 15, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takaya Kikai, Yuzo Ohishi
  • Patent number: 10867817
    Abstract: Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: December 15, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Takaya Kikai, Yuichi Yoshida, Yuzo Ohishi
  • Patent number: 10795265
    Abstract: There is provided a substrate processing apparatus including: a light radiator configured to radiate a light for processing into an irradiation area which is smaller than a processing target area of a surface of a substrate; a driver configured to move the irradiation area in two directions that cross each other in a plane along the surface of the substrate; and a controller configured to control the driver to move an irradiation position in two directions according to a movement pattern which has been set to radiate the light to an entire area of the processing target area.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: October 6, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihisa Koga, Yoshitaka Konishi, Naruaki Iida, Yuzo Ohishi, Kazuhiro Takeshita
  • Publication number: 20200168487
    Abstract: Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.
    Type: Application
    Filed: January 30, 2020
    Publication date: May 28, 2020
    Inventors: Takaya Kikai, Yuichi Yoshida, Yuzo Ohishi
  • Patent number: 10615062
    Abstract: Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: April 7, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Takaya Kikai, Yuichi Yoshida, Yuzo Ohishi
  • Patent number: 10591823
    Abstract: A substrate processing apparatus includes a hot plate which supports and heats a substrate, a light source which emits etching energy beam such that the etching energy beam etches the substrate held by the hot plate, a window device which is positioned between the light source and the hot plate and transmits the etching energy beam emitted by the light source toward the substrate, and an adjusting device which adjusts emission amounts of the etching energy beam from portions of the window device toward the substrate such that the adjusting device reduces difference in etching amounts of portions of the substrate.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: March 17, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Keisuke Yoshida, Yuzo Ohishi, Keisuke Sasaki, Shoichi Terada
  • Publication number: 20200041913
    Abstract: There is provided a substrate processing apparatus including: a light radiator configured to radiate a light for processing into an irradiation area which is smaller than a processing target area of a surface of a substrate; a driver configured to move the irradiation area in two directions that cross each other in a plane along the surface of the substrate; and a controller configured to control the driver to move an irradiation position in two directions according to a movement pattern which has been set to radiate the light to an entire area of the processing target area.
    Type: Application
    Filed: July 24, 2019
    Publication date: February 6, 2020
    Inventors: Norihisa KOGA, Yoshitaka KONISHI, Naruaki IIDA, Yuzo OHISHI, Kazuhiro TAKESHITA
  • Publication number: 20190237346
    Abstract: An ashing apparatus includes a light irradiating unit configured to irradiate, to a substrate having an organic film formed on a surface thereof, processing light for ashing the organic film; a posture changing unit configured to change a posture of the substrate with respect to the light irradiating unit; and a control unit. The control unit performs: a first processing of controlling the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a first posture to a second posture; and a second processing of controlling, after the first processing, the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a third posture different from the first posture to a fourth posture.
    Type: Application
    Filed: January 29, 2019
    Publication date: August 1, 2019
    Inventors: Takaya Kikai, Yuzo Ohishi
  • Publication number: 20190148179
    Abstract: A substrate processing apparatus 1 includes a rotating/holding unit 30 configured to hold and rotate a wafer W having an organic film on a front surface Wa thereof; a light irradiating unit 40 configured to irradiate light for aching of the organic film to the front surface; a gas flow forming unit 50 configured to form a gas flow of an oxygen-containing gas which passes between the wafer W and the light irradiating unit 40; an irradiation control unit 114 configured to irradiate the light to the front surface in a state that the gas flow is formed between the wafer W and the light irradiating unit 40; and a rotation control unit 115 configured to rotate the wafer W in a state that the gas flow is formed between the wafer W and the light irradiating unit 40 and the light is irradiated to the front surface.
    Type: Application
    Filed: November 12, 2018
    Publication date: May 16, 2019
    Inventors: Takaya Kikai, Yuzo Ohishi
  • Publication number: 20180218929
    Abstract: Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.
    Type: Application
    Filed: January 25, 2018
    Publication date: August 2, 2018
    Inventors: Takaya Kikai, Yuichi Yoshida, Yuzo Ohishi
  • Publication number: 20170047233
    Abstract: A substrate processing apparatus includes a placing table configured to hold a substrate having a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere; a processing chamber, configured to accommodate therein the substrate placed on the placing table, having therein the oxygen-containing atmosphere; and an ultraviolet ray irradiation device configured to irradiate the ultraviolet ray to the substrate within the processing chamber. Further, the placing table is provided with a surrounding member configured to surround the substrate placed on the placing table and restrict a gas introduction amount from an outside of the substrate toward above the substrate.
    Type: Application
    Filed: November 1, 2016
    Publication date: February 16, 2017
    Inventors: Masatoshi Kaneda, Yuzo Ohishi, Keisuke Yoshida
  • Patent number: 9514951
    Abstract: A substrate processing method can remove a part of a processing target film formed on a surface of a substrate W under a normal pressure atmosphere while suppressing an influence upon the substrate. A source material of the processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, is coated on the substrate W, and the processing target film is formed by heating the source material coated on the substrate W. Then, the substrate W having thereon the processing target film is placed within a processing chamber under the oxygen-containing atmosphere where a gas flow velocity is equal to or smaller than 10 cm/sec, and the part of the processing target film is removed by irradiating the ultraviolet ray to the substrate W.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: December 6, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masatoshi Kaneda, Yuzo Ohishi, Keisuke Yoshida
  • Publication number: 20160181133
    Abstract: A substrate processing apparatus includes a hot plate which supports and heats a substrate, a light source which emits etching energy beam such that the etching energy beam etches the substrate held by the hot plate, a window device which is positioned between the light source and the hot plate and transmits the etching energy beam emitted by the light source toward the substrate, and an adjusting device which adjusts emission amounts of the etching energy beam from portions of the window device toward the substrate such that the adjusting device reduces difference in etching amounts of portions of the substrate.
    Type: Application
    Filed: December 18, 2015
    Publication date: June 23, 2016
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Keisuke YOSHIDA, Yuzo OHISHI, Keisuke SASAKI, Shoichi TERADA
  • Publication number: 20150371894
    Abstract: A substrate processing method can remove a part of a processing target film formed on a surface of a substrate W under a normal pressure atmosphere while suppressing an influence upon the substrate. A source material of the processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, is coated on the substrate W, and the processing target film is formed by heating the source material coated on the substrate W. Then, the substrate W having thereon the processing target film is placed within a processing chamber under the oxygen-containing atmosphere where a gas flow velocity is equal to or smaller than 10 cm/sec, and the part of the processing target film is removed by irradiating the ultraviolet ray to the substrate W.
    Type: Application
    Filed: June 19, 2015
    Publication date: December 24, 2015
    Inventors: Masatoshi Kaneda, Yuzo Ohishi, Keisuke Yoshida