Abstract: There is disclosed a solid-state image pickup device in which light receiving elements of a light receiving region generates information charges in accordance with incident lights. The information charges are transferred to storage picture elements of a storage region, and subsequently emitted as image signals. Here, the storage region is formed smaller than the light receiving region. Only the information charges of a selected region are transferred from the light receiving elements of the light receiving region to the storage region. Therefore, thinned-out image signals can be obtained.

Abstract: There is disclosed a solid-state image pickup device in which light receiving elements of a light receiving region generates information charges in accordance with incident lights. The information charges are transferred to storage picture elements of a storage region, and subsequently emitted as image signals. Here, the storage region is formed smaller than the light receiving region. Only the information charges of a selected region are transferred from the light receiving elements of the light receiving region to the storage region. Therefore, thinned-out image signals can be obtained.

Abstract: There is disclosed a solid-state image pickup device in which light receiving elements of a light receiving region generates information charges in accordance with incident lights. The information charges are transferred to storage picture elements of a storage region, and subsequently emitted as image signals. Here, the storage region is formed smaller than the light receiving region. Only the information charges of a selected region are transferred from the light receiving elements of the light receiving region to the storage region. Therefore, thinned-out image signals can be obtained.

Abstract: A solid-state image pickup device for generating image signals in accordance with incident light includes a semiconductor substrate with a semiconductor region formed on one surface thereof, plural channel regions extending in a column direction on the region and defining plural picture elements in which electric charges are accumulated, and plural transfer electrodes extending in a row direction on the semiconductor region. The picture elements include light receiving elements accumulating electric charges according to incident light and storage elements for storing charges transferred from the light receiving elements.