Abstract: A polishing material which controls a polishing rate of a silicon surface is provided. A polishing material including abrasive grains and a compound represented by a Formula (1). R—O-(AO)m—H??Formula (1) In the Formula (1), R is an organic group including a conjugated system and may include a heteroatom in a carbon skeleton, and C1/(C1+C2)?0.4 holds, where C1 is the number of atoms constituting the conjugated system and C2 is the number of atoms not constituting the conjugated system among atoms constituting the carbon skeleton, AO represents an oxyalkylene group, and a plurality of the AOs may be the same as or different from each other, and n is an integer of 2 to 200.

Abstract: A glass substrate for a mask blank includes a first surface and a second surface. The first surface and second surface face each other. Each of the first surface and the second surface is approximately square having a vertical length and a horizontal length being equal to the vertical length. The first surface of the glass substrate has specific profile properties.

Abstract: A glass substrate for a mask blank includes two main surfaces facing each other and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around the two main surfaces. A flatness of one of the main surfaces is 100 nm or less. On the surface to be chamfered from which substrate corner parts are excluded, each of the substrate corner part being portions where a distance from an outer end of a two-dimensional projection profile of the one of the main surfaces and the surface to be chamfered is within 10 mm, a waviness measured in a range of 2 mm at an arbitrary part in a direction parallel to one side closest to the surface to be chamfered in the two-dimensional projection profile is 50 nm or less.

Abstract: A mask blank includes a glass substrate including a first main surface and a second main surface, an absorbing film formed above the first main surface, and a conductive film formed on the second main surface. A reflective film is provided between the absorbing film and the glass substrate. In a surface of the conductive film on an opposite side to the glass substrate, when a surface shape of a square central area having a length of 142 mm and a width of 142 mm excluding a four-sided frame-shaped peripheral area thereof is expressed by the specific formula, flatness of a component obtained by summing all aklPk(x)Pl(y) with the sum of k and l being 3 or more and 25 or less is 20 nm or less.

Abstract: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by the following formulas. A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Abstract: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by { z ? ( x , y ) = ? k = 0 N 1 ? ? l = 0 N 2 ? a kl ? P k ? ( x ) ? P l ? ( y ) P k ? ( x ) = 1 2 k ? k ! ? d k dx k ? [ ( x 2 - 1 ) k ] P l ? ( y ) = 1 2 l ? l ! ? d l dy l ? [ ( y 2 - 1 ) l ] . A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Abstract: A mask blank includes a glass substrate including a first main surface and a second main surface, an absorbing film formed above the first main surface, and a conductive film formed on the second main surface. A reflective film is provided between the absorbing film and the glass substrate. In a surface of the conductive film on an opposite side to the glass substrate, when a surface shape of a square central area having a length of 142 mm and a width of 142 mm excluding a four-sided frame-shaped peripheral area thereof is expressed by the specific formula, flatness of a component obtained by summing all aklPk(x)Pl(y) with the sum of k and l being 3 or more and 25 or less is 20 nm or less.

Abstract: A glass substrate for a mask blank includes a first surface and a second surface. The first surface and second surface face each other. Each of the first surface and the second surface is approximately square having a vertical length and a horizontal length being equal to the vertical length. The first surface of the glass substrate has specific profile properties.

Abstract: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by the following formulas. A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Abstract: A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by { z ? ( x , y ) = ? k = 0 N 1 ? ? l = 0 N 2 ? a kl ? P k ? ( x ) ? P l ? ( y ) P k ? ( x ) = 1 2 k ? k ! ? d k dx k ? [ ( x 2 - 1 ) k ] P l ? ( y ) = 1 2 l ? l ! ? d l dy l ? [ ( y 2 - 1 ) l ] . A flatness of a sum of compositing all of aklPk(x)Pl(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Abstract: A glass substrate for a mask blank includes two main surfaces facing each other, side surfaces and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around each of the two main surfaces. At least one of the side surfaces and the surfaces to be chamfered in the glass substrate has, in a measurement area with an atomic force microscope (AFM) of 3 ?m square, an arithmetic mean roughness (Ra) of 0.5 nm or less and a dale void volume (Vvv) obtained from a bearing area curve as defined in ISO 25178-2(2012) of 1.5×107 nm3 or less.

Abstract: A glass substrate for a mask blank includes two main surfaces facing each other and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around the two main surfaces. A flatness of one of the main surfaces is 100 nm or less. On the surface to be chamfered from which substrate corner parts are excluded, each of the substrate corner part being portions where a distance from an outer end of a two-dimensional projection profile of the one of the main surfaces and the surface to be chamfered is within 10 mm, a waviness measured in a range of 2 mm at an arbitrary part in a direction parallel to one side closest to the surface to be chamfered in the two-dimensional projection profile is 50 nm or less.

Abstract: The present invention relates to a method of finishing a pre-polished TiO2—SiO2 glass substrate, containing a step of measuring a striae-originated MSFR (MSFR0) of a major surface, a step of measuring a TiO2 concentration distribution (?TiO2) in the major surface, a first and second processing steps of processing the major surface, and a cleaning step of cleaning the major surface, in which according to the MSFR0 (nm) and the ?TiO2 (wt %), the total etching amount (nm) of a chemical etching amount of the major surface in the second processing step and another chemical etching amount of the major surface in the cleaning step is controlled to satisfy the following expression (1) Total etching amount?(10 nm?MSFR0)v/A/?TiO2 ??(1) (v is an average etching rate (nm/sec) and A is an TiO2 concentration dependency (nm/sec/wt %) of an etching rate).

Abstract: The present invention relates to a multilayer substrate containing a substrate and a multilayer film provided on the substrate, in which a concave or convex fiducial mark that indicates a fiducial position of the multilayer substrate is formed on the surface of the multilayer film on the opposite side to the side of the substrate; and a material of at least a part of the surface of the fiducial mark is different from a material of a most superficial layer of the multilayer film on the opposite side to the side of the substrate.

Abstract: The present invention relates to a reflective mask blank containing in this order, a substrate, a multilayer reflective film that reflects exposure light, and an absorber layer that absorbs the exposure light, in which the reflective mask blank further contains a fiducial mark indicating a reference position of the multilayer reflective film, which is formed in a concave shape or in a convex shape on a surface of the multilayer reflective film or on a surface of one layer formed between the multilayer reflective film and the absorber layer, and the fiducial mark is formed so as to have a reflectivity different from an area surrounding the fiducial mark with respect to a light with a prescribed wavelength and is transferred to a layer formed on the fiducial mark.

Abstract: The present invention relates to a reflective mask blank containing in this order, a substrate, a multilayer reflective film that reflects exposure light, and an absorber layer that absorbs the exposure light, in which the reflective mask blank further contains a fiducial mark indicating a reference position of the multilayer reflective film, which is formed in a concave shape or in a convex shape on a surface of the multilayer reflective film or on a surface of one layer formed between the multilayer reflective film and the absorber layer, and the fiducial mark is formed so as to have a reflectivity different from an area surrounding the fiducial mark with respect to a light with a prescribed wavelength and is transferred to a layer formed on the fiducial mark.

Abstract: The present invention relates to a multilayer substrate containing a substrate and a multilayer film provided on the substrate, in which a concave or convex fiducial mark that indicates a fiducial position of the multilayer substrate is formed on the surface of the multilayer film on the opposite side to the side of the substrate; and a material of at least a part of the surface of the fiducial mark is different from a material of a most superficial layer of the multilayer film on the opposite side to the side of the substrate.