Abstract: A surface treatment composition of the present invention is a surface treatment composition that are supplied as a vapor to a surface of a wafer having an uneven pattern on the surface and used to form a water-repellent protective film on the surface, the surface treatment composition containing a silylating agent and a solvent, in which the silylating agent contains a trialkylsilylamine, the solvent contains at least one or more selected from the group consisting of glycol ether acetate and glycol acetate, and a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of a total amount of the solvent.

Abstract: A bevel portion treatment agent composition of the present invention is a bevel portion treatment agent composition containing a silylating agent, which is used for treating a bevel portion of a wafer, in which a surface modification index Y and a surface modification index Z measured by a predetermined procedure have a characteristic of satisfying 0.5?Y/Z?1.0.

Abstract: A surface treatment method for semiconductor substrates of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a bevel region which is formed on a periphery of the pattern formation region, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the bevel region on the main surface of the semiconductor substrate, in which, with respect to a surface of a silicon oxide substrate brought into contact with the surface treatment agent composition, an IPA receding contact angle is 3° or more at a room temperature of 25° C., and/or a water receding contact angle is 40° or more at the room temperature of 25° C.

Abstract: A surface treatment method for a semiconductor substrate of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a pattern non-formation region in which no pattern is formed, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region on the main surface of the semiconductor substrate, in which, with respect to a surface of the pattern non-formation region after the surface treatment step, an IPA contact angle with 2-propanol is 2° or more at a room temperature of 25° C. and/or a water contact angle with pure water is 50° or more at the room temperature of 25° C.

Abstract: According to the present disclosure, there are provided a surface treatment agent having the advantage that the raw material components can be dissolved in a short time during preparation of the surface treatment agent and capable of exerting a good water repellency imparting effect, and a method of manufacturing a surface-treated body with the use of the surface treatment agent. The surface treatment agent according to the present disclosure includes the following components: (I) at least one kind selected from the group consisting of silicon compounds represented by the following general formulas [1], [2] and [3]; (II) at least one kind selected from the group consisting of a nitrogen-containing heterocyclic compound represented by the following general formula [4], a nitrogen-containing heterocyclic compound represented by the following general formula [5], and imidazole; and (III) an organic solvent.

Abstract: Please substitute the new Abstract submitted herewith for the original Abstract: The present disclosure provides a surface treatment agent capable of not only being prepared by dissolving raw materials in a short time but also exerting a good water repellency imparting effect, and a method for manufacturing a surface treated body with the use of the surface treatment agent.

Abstract: According to the present disclosure, there is provided a water-repellent protective film-forming liquid chemical capable of achieving an improved water repellency imparting effect. The water-repellent protective film-forming liquid chemical according to the present disclosure contains the following compositions: (I) an aminosilane composition of the following general formula [1]; (II) a silicon compound of the following general formula [2]; and (III) an aprotic solvent, wherein the amount of the component (I) contained is 0.02 to 0.5 mass % based on the total amount of the components (I) to (III).

Abstract: A bevel portion treatment agent composition of the present invention is a bevel portion treatment agent composition containing a silylating agent, which is used for treating a bevel portion of a wafer, in which a surface modification index Y and a surface modification index Z measured by a predetermined procedure have a characteristic of satisfying 0.5?Y/Z?1.0.

Abstract: According to the present disclosure, there are provided a surface treatment agent having the advantage that the raw material components can be dissolved in a short time during preparation of the surface treatment agent and capable of exerting a good water repellency imparting effect, and a method of manufacturing a surface-treated body with the use of the surface treatment agent. The surface treatment agent according to the present disclosure includes the following components: (I) at least one kind selected from the group consisting of silicon compounds represented by the following general formulas [1], [2] and [3]; (II) at least one kind selected from the group consisting of a nitrogen-containing heterocyclic compound represented by the following general formula [4], a nitrogen-containing heterocyclic compound represented by the following general formula [5], and imidazole; and (III) an organic solvent.

Abstract: According to the present disclosure, there is provided a water-repellent protective film-forming liquid chemical capable of achieving an improved water repellency imparting effect. The water-repellent protective film-forming liquid chemical according to the present disclosure contains the following compositions: (I) an aminosilane composition of the following general formula [1]; (II) a silicon compound of the following general formula [2]; and (III) an aprotic solvent, wherein the amount of the component (I) contained is 0.02 to 0.5 mass % based on the total amount of the components (I) to (III).

Abstract: The present invention is directed to a novel water-repellent protective film-forming agent and a novel water-repellent protective film-forming liquid chemical, each of which is for forming a water-repellent protective film on a silicon element-containing surface of a wafer, and a method of surface-treating a wafer with the use of the agent in liquid form or the liquid chemical. The water-repellent protective film-forming agent according to the present invention includes at least one kind of silicon compound selected from the group consisting of guanidine derivatives of the following general formula [1] and amidine derivatives of the following general formula [2].

Abstract: The present invention is directed to a liquid chemical for forming a water-repellent protective film on a silicon element-containing wafer surface, a method of preparing the liquid chemical and a method of manufacturing a surface-treated body with the use of the liquid chemical, wherein the liquid chemical includes the following components: (I) a silylation agent; (II) at least one kind of nitrogen-containing compound selected from the group consisting of those of the following general formulas [1] and [2]; and (III) an organic solvent.

Abstract: According to the present invention, there is provided a water-repellent protective film-forming chemical liquid containing: a first solvent being at least one kind selected from the group consisting of an ether solvent and a hydrocarbon solvent; a second solvent being a glycol ether; a silylation agent represented by the following general formula [1]; and a base represented by the following general formula [2] and/or the following general formula [3], wherein the concentration of the second solvent in the chemical liquid is 1 to 30 mass %, wherein the concentration of the silylation agent in the chemical liquid is 2 to 15 mass %, wherein the concentration of the base in the chemical liquid is 0.05 to 2 mass %, and wherein the mass ratio of the silylation agent to the base is 4.5 or greater.

Abstract: To provide a water-repellent protective film-forming liquid chemical used in a process of cleaning a wafer by means of a cleaning machine whose liquid contact member contains a vinyl chloride resin. A liquid chemical is used, which includes an alkoxysilane represented by the following general formula [1]; at least one kind selected from the group consisting of a sulfonic acid represented by the following general formula [2], an anhydride of the sulfonic acid, a salt of the sulfonic acid and a sulfonic acid derivative represented by the following general formula [3]; and a diluent solvent containing at least one kind selected from the group consisting of a hydrocarbon, an ether and a thiol.

Abstract: Provided herein is a method for cleaning a wafer having a fine uneven surface pattern that at least partially contains a silicon element using a wafer cleaning device that includes a vinyl chloride resin as a liquid contacting member, the method including retaining a water-repellent protective film-forming chemical in at least a recessed portion of the uneven pattern to form a water-repellent protective film on a surface of the recessed portion, the water-repellent protective film-forming chemical containing: a monoalkoxysilane represented by the following general formula [1], (R1)aSi(H)3-a(OR2)??[1]; a sulfonic acid represented by the following general formula [2], R3—S(?O)2OH??[2]; and a diluting solvent, wherein the diluting solvent contains 80 to 100 mass % of alcohol with respect to the total 100 mass % of the diluting solvent.