Abstract: Provided is a botulinum toxin producing method which is simple achieves a high toxin yield, and obtains a toxin having high specific activity. This botulinum toxin producing method includes: (A) a step in which a botulinum toxin is produced from botulinum toxin-producing bacteria in a medium, and a mixture a is obtained which contains a botulinum toxin, a bacterial component, and a nucleic acid component derived from the botulinum toxin; (B) a step in which the mixture a is subjected to the removal of the bacterial component, and a mixture b is obtained which contains a nucleic acid component and a botulinum toxin; (C) a step in which an endonuclease is added to the mixture b and a mixture c is obtained which contains a nucleic acid degradation product and a botulinum toxin; and (D) a step in which the mixture c is subjected to removal of the nucleic acid degradation product, and an isolated botulinum toxin liquid d is obtained.

Abstract: A swept light source of the present invention keeps a coherence length of an output beam long over an entire sweep wavelength range. A gain of a gain medium is changed with time in response to a wavelength sweep and the coherence length is kept maximum. The gain of the gain medium is kept close to a lasing threshold and an unsaturated gain range of the gain medium is narrowed over the entire sweep wavelength range. An SOA current waveform data acquiring method of driving while keeping the coherence length long, a novel coherence length measuring method, and an optical deflector suitable for the swept light source are also disclosed.

Abstract: One form of a motor control device includes: a waveform generation unit and an amplifier that generate a drive voltage of a voice coil motor (VCM); a DC offset detection unit that detects a DC offset of the drive voltage; a stop control unit that stops application of the drive voltage to a motor coil when the detected DC offset exceeds an operation stop threshold; a temperature correction value setting unit that sets a temperature correction value corresponding to the DC offset when the detected DC offset is lower than the operation stop threshold; a thermistor that detects an ambient temperature; and a vibration level control unit that varies the drive voltage and controls an amplitude level based on the detected ambient temperature and the set temperature correction value.

Abstract: One form of a motor control device includes: a waveform generation unit and an amplifier that generate a drive voltage of a voice coil motor (VCM); a DC offset detection unit that detects a DC offset of the drive voltage; a stop control unit that stops application of the drive voltage to a motor coil when the detected DC offset exceeds an operation stop threshold; a temperature correction value setting unit that sets a temperature correction value corresponding to the DC offset when the detected DC offset is lower than the operation stop threshold; a thermistor that detects an ambient temperature; and a vibration level control unit that varies the drive voltage and controls an amplitude level based on the detected ambient temperature and the set temperature correction value.

Abstract: A swept light source of the present invention keeps a coherence length of an output beam long over an entire sweep wavelength range. A gain of a gain medium is changed with time in response to a wavelength sweep and the coherence length is kept maximum. The gain of the gain medium is kept close to a lasing threshold and an unsaturated gain range of the gain medium is narrowed over the entire sweep wavelength range. An SOA current waveform data acquiring method of driving while keeping the coherence length long, a novel coherence length measuring method, and an optical deflector suitable for the swept light source are also disclosed.

Abstract: A swept light source of the present invention keeps a coherence length of an output beam long over an entire sweep wavelength range. A gain of a gain medium is changed with time in response to a wavelength sweep and the coherence length is kept maximum. The gain of the gain medium is kept close to a lasing threshold and an unsaturated gain range of the gain medium is narrowed over the entire sweep wavelength range. An SOA current waveform data acquiring method of driving while keeping the coherence length long, a novel coherence length measuring method, and an optical deflector suitable for the swept light source are also disclosed.

Abstract: A swept light source of the present invention keeps a coherence length of an output beam long over an entire sweep wavelength range. A gain of a gain medium is changed with time in response to a wavelength sweep and the coherence length is kept maximum. The gain of the gain medium is kept close to a lasing threshold and an unsaturated gain range of the gain medium is narrowed over the entire sweep wavelength range. An SOA current waveform data acquiring method of driving while keeping the coherence length long, a novel coherence length measuring method, and an optical deflector suitable for the swept light source are also disclosed.

Abstract: In order to reduce edge defects efficiently and sufficiently, a method for manufacturing a SiC epitaxial wafer according to the present invention is a method for manufacturing a SiC epitaxial wafer that forms a SiC epitaxial layer on top of a SiC single crystal substrate having an off angle, and includes a rough polishing step for subjecting an outer circumferential edge on a starting side of step-flow growth in the SiC single crystal substrate to rough polishing before forming the SiC epitaxial layer; and a final polishing step for further polishing for finish.

Abstract: Provided is a swept light source including one end surface coupled to a wavelength filter constituted of a diffraction grating and an end mirror via a light deflector and another end surface including a gain medium facing an output coupling mirror and which configures a laser cavity between the end mirror and the output coupling mirror, wherein a drive voltage having an AC voltage on which a DC bias voltage is superimposed is output from a control voltage source of the light deflector to an electrode pair of an electro-optic crystal, light is radiated from a light emitter to the electro-optic crystal, and incident light from the gain medium incident along an optical axis perpendicular to a direction of an electric field formed by the control voltage is deflected in a direction parallel to the electric field, so that wavelength sweeping is performed.

Abstract: Provided is a swept light source including one end surface coupled to a wavelength filter constituted of a diffraction grating and an end mirror via a light deflector and another end surface including a gain medium facing an output coupling mirror and which configures a laser cavity between the end mirror and the output coupling mirror, wherein a drive voltage having an AC voltage on which a DC bias voltage is superimposed is output from a control voltage source of the light deflector to an electrode pair of an electro-optic crystal, light is radiated from a light emitter to the electro-optic crystal, and incident light from the gain medium incident along an optical axis perpendicular to a direction of an electric field formed by the control voltage is deflected in a direction parallel to the electric field, so that wavelength sweeping is performed.

Abstract: In order to reduce edge defects efficiently and sufficiently, a method for manufacturing a SiC epitaxial wafer according to the present invention is a method for manufacturing a SiC epitaxial wafer that forms a SiC epitaxial layer on top of a SiC single crystal substrate having an off angle, and includes a rough polishing step for subjecting an outer circumferential edge on a starting side of step-flow growth in the SiC single crystal substrate to rough polishing before forming the SiC epitaxial layer; and a final polishing step for further polishing for finish.

Abstract: A method of manufacturing a SiC substrate of the invention includes at least an oxide film-forming process of forming an oxide film (10) to cover a surface (1a) of the SiC substrate (1); and a planarization process of polishing the SiC substrate (1) from an oxide film side (10) in accordance with a CMP method so as to remove the oxide film (10), and of polishing the surface (1a) of the SiC substrate (1) to planarize the surface (1a).

Abstract: A method that includes at least a CMP step of subjecting both a Si surface (1a) and a C surface (1b) of an SiC substrate (1) to double-sided polishing using a CMP (Chemical Mechanical Polishing) method with a C surface/Si surface processing selectivity ratio of 3.0 or greater.

Abstract: A method for manufacturing a SiC substrate is provided. The method includes: a sacrificial film-forming process of forming a sacrificial film on a surface of a SiC substrate in a film thickness that is equal to or greater than a maximum height difference of the surface; a sacrificial film planarization process of planarizing a surface of the sacrificial film by mechanical processing; and a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.

Abstract: A method that includes at least a CMP step of subjecting both a Si surface (1a) and a C surface (1b) of an SiC substrate (1) to double-sided polishing using a CMP (Chemical Mechanical Polishing) method with a C surface/Si surface processing selectivity ratio of 3.0 or greater.

Abstract: A method for manufacturing a SiC substrate is provided. The method includes: a sacrificial film-forming process of forming a sacrificial film on a surface of a SiC substrate in a film thickness that is equal to or greater than a maximum height difference of the surface; a sacrificial film planarization process of planarizing a surface of the sacrificial film by mechanical processing; and a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.

Abstract: A method of manufacturing a SiC substrate of the invention includes at least an oxide film-forming process of forming an oxide film (10) to cover a surface (1a) of the SiC substrate (1); and a planarization process of polishing the SiC substrate (1) from an oxide film side (10) in accordance with a CMP method so as to remove the oxide film (10), and of polishing the surface (1a) of the SiC substrate (1) to planarize the surface (1a).

Abstract: There are provided a method for manufacturing a magnetic recording medium which is excellent in terms of both the recording and reproduction characteristics and the thermal fluctuation characteristics without reducing the density and hardness of the perpendicular magnetic layer; a magnetic recording medium; and a magnetic recording and reproducing apparatus with which an excellent recording density is achieved, wherein, in the method for manufacturing the magnetic recording medium, at least a portion of the perpendicular magnetic layer 4 is formed as a magnetic layer having a granular structure that contains Co as a major component and also contains an oxide of at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg; a target for forming the perpendicular magnetic layer 4 by the sputtering process is prepared so as to include an oxide of Co and a compound of Co and at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg, an

Abstract: A thermal-assist magnetic recording medium is provided which can accomplish a surface recording density of 1 Tbit/inch2. The thermal-assist magnetic recording medium includes: a substrate; a plurality of underlying layers formed on the substrate; a first magnetic layer formed on the underlying layers; a coupling control layer formed on the first magnetic layer and formed of a ferromagnetic alloy; and a second magnetic layer formed on the coupling control layer. Here, Curie temperatures of the first magnetic layer and the second magnetic layer are higher than the Curie temperature of the coupling control layer, an anisotropy magnetic field of the first magnetic layer is greater than the anisotropy magnetic field of the second magnetic layer, and a saturation magnetic field has a minimum value at a temperature of 350° C. or lower.

Abstract: The present invention relates to a method for manufacturing a perpendicular magnetic recording medium including a nonmagnetic substrate, and at least a soft magnetic under layer, an orientation control layer, a magnetic recording layer constituted of two or more layers and a protective layer formed on the nonmagnetic substrate, the method including a step of forming a first magnetic recording layer having a granular structure constituted of ferromagnetic crystal grains and crystal grain boundaries made of a nonmagnetic oxide or nitride on the nonmagnetic substrate side, a step of forming a second magnetic recording layer constituted only of ferromagnetic crystal grains, a step of forming a surface unevenness control layer for decreasing surface unevenness of the first magnetic recording layer located between the first magnetic recording layer and the second magnetic recording layer, and a step of heating the nonmagnetic substrate so as to decrease a surface roughness Ra of the second magnetic recording layer