Abstract: According to one embodiment, nano metal compound particles are provided. The nano metal compound particles have an average particle size of 50 nm or less. The nano metal compound particles have a peak ?t of 2.8 eV or less. The peak ?t corresponds to a resonant frequency of an oscillator according to a spectroscopic ellipsometry method fitted to a Lorentz model.

Abstract: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm?3 or more to 1×1022 cm?3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm?3 or less.

Abstract: The present invention relates to a material for making a transparent conductive film, and a transparent conductive film. The material for making the transparent conductive film is composed of a mixed metal oxide comprising Zn, Sn, O, and at least one doping element selected from the group consisting of Sc, Bi, Cu, Y, La, Ag, and Au.

Abstract: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm?3 or more to 1×1022 cm?3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm?3 or less.

Abstract: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm?3 or more to 1×1022 cm?3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm?3 or less.

Abstract: The present invention provides a transparent electrically conductive film and a method for producing the same. The transparent electrically conductive film comprises Zn, Sn and O, wherein the molar ratio Zn/(Zn+Sn) of Zn to the sum of Zn and Sn is 0.41 to 0.55, and is amorphous.

Abstract: The present invention provides a material for transparent conductive film. The material for transparent conductive film comprises a mixed metal oxide containing Zn, Sn and O, and at least one selected from the group consisting of group V to X elements of the periodic table as a dopant element.

Abstract: There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.

Abstract: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm?3 or more to 1×1022 cm?3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm?3 or less.

Abstract: The present invention provides a transparent electrically conductive film and a method for producing the same. The transparent electrically conductive film comprises Zn, Sn and O, wherein the molar ratio Zn/(Zn+Sn) of Zn to the sum of Zn and Sn is 0.41 to 0.55, and is amorphous.

Abstract: A crystalline ITO transparent conductive thin film is formed by heating a substrate at low temperature during the sputtering film formation. The crystalline ITO transparent conductive thin film is formed by using an ITO target comprising In2O3 and SnO2 where a weight percentage of SnO2 is 6% or less based on the total weight of In2O3 and SnO2 in the ITO target, and heating the substrate at 90 to 170° C. during the sputtering film formation. The crystalline ITO film with high strength and mechanical durability can be formed by heating at low temperature, which meets heat resistance of the substrate, without requiring annealing after the film formation. There are provided a transparent conductive film comprising a polymer film 4 and an ITO transparent conductive film 5 formed thereon, and a touch panel comprising the transparent conductive film.

Abstract: There are provided:

Abstract: There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.

Abstract: In a method of forming a transparent conductive film, an arc discharge type plasma produced by arc discharging is generated in an atmosphere wherein the pressure of an atmospheric gas is 3.0 .times. 10.sup.-4 Torr or higher; the plasma is converged onto a vapor deposition material for forming a transparent conductive film to thereby evaporate the vapor deposition material, whereby said transparent conductive film is formed on a substrate located above said vapor deposition material.