Abstract: A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. The integrated circuit device having a photo detecting part, leads and wires for connection therebetween are encapsulated in an encapsulation section. A recess is formed on the light incident surface of the encapsulation section above the photo detecting part, to thin the encapsulation section on the surface of the photo detecting part and thereby reduce the energy of light absorbed by the encapsulation section.

Abstract: A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.

Abstract: A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.

Abstract: The present invention is intended to prevent a light-emitting diode from emitting light continuously in the case when the level at an input terminal is fixed high because of software or the like and to avoid various problems, such as battery exhaustion and breakdown of the light-emitting diode, in PDAs, cellular phones, etc. For these purposes, a high-pass filter 21 for passing the high-frequency components of an optical transmission input signal having a pulse waveform and a binary circuit 22 for binarizing the output signal of the high-pass filter 21 so as to be returned to a pulse waveform are provided in the preceding stage of a light-emitting device driving circuit 23 for driving a light-emitting diode 8 for optical transmission.

Abstract: A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.

Abstract: A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. The integrated circuit device having a photo detecting part, leads and wires for connection therebetween are encapsulated in an encapsulation section. A recess is formed on the light incident surface of the encapsulation section above the photo detecting part, to thin the encapsulation section on the surface of the photo detecting part and thereby reduce the energy of light absorbed by the encapsulation section.

Abstract: A semiconductor device includes the following: a semiconductor substrate of a first conduction type; an intrinsic semiconductor layer of the first conduction type formed on the semiconductor substrate; a first semiconductor layer of a second conduction type formed on the intrinsic semiconductor layer; a first impurity layer of the first conduction type formed in the first semiconductor layer of the second conduction type; and a bipolar transistor and a MIS transistor formed in the first semiconductor layer of the second conduction type. The laminated structure of the semiconductor substrate, the intrinsic semiconductor layer, and the first semiconductor layer provides a diode for photoelectric conversion. A first insulator layer and a second insulator layer are formed respectively in at least a portion below the bipolar transistor and the MIS transistor.

Abstract: A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.

Abstract: A semiconductor device includes the following: a semiconductor substrate of a first conduction type; an intrinsic semiconductor layer of the first conduction type formed on the semiconductor substrate; a first semiconductor layer of a second conduction type formed on the intrinsic semiconductor layer; a first impurity layer of the first conduction type formed in the first semiconductor layer of the second conduction type; and a bipolar transistor and a MIS transistor formed in the first semiconductor layer of the second conduction type. The laminated structure of the semiconductor substrate, the intrinsic semiconductor layer, and the first semiconductor layer provides a diode for photoelectric conversion. A first insulator layer and a second insulator layer are formed respectively in at least a portion below the bipolar transistor and the MIS transistor.

Abstract: To more precisely output signals of optical recording media, a semiconductor laser element is mounted in a concave portion on the surface of a semiconductor substrate so that the optical axis of signal detecting light emitted from the semiconductor laser element is substantially parallel to the surface of the semiconductor substrate, and the light emitted from the semiconductor laser element is reflected at the side surface of the concave portion that is opposed to the signal detecting light emitting side of the semiconductor laser element in a direction substantially perpendicular to the surface of the semiconductor substrate. A light receiving portion for signal detection is provided in an area outside the concave portion on the surface of the semiconductor substrate where the semiconductor laser element is mounted.

Abstract: An object is that stray light carriers are absorbed, and hence a signal larger than actual signal will not be outputted, thereby to output more precise signals. For achieving the foregoing, a concave portion is provided on the surface of a semiconductor substrate, a light receiving element for signal detection is provided around the concave portion, a semiconductor laser element is mounted in the concave portion, and a light shielding area is provided on the side existing between the semiconductor laser element and the light receiving element for signal detection of the sides of the concave portion. This causes stray light contained in the light emitted from the semiconductor laser element to be cut off at the light shielding area. Consequently, around the light receiving element for signal detection, the occurrence of stray light carriers on the surface of the semiconductor substrate can be prevented, and hence the stray light carriers are not absorbed by the light receiving element for signal detection.

Abstract: A polyester composition, comprising a thermoplastic polyester resin and hydroxy apatite particles with an average particle diameter of 0.01 to 10 .mu.m and a specific surface area of 50 to 500 m.sup.2 /g and represented by the following chemical formula, and a film made thereof. A polyester film excellent in such basic properties as slipperiness and abrasion resistance, and also in electric properties, perforability, processability as a laminate with a metallic sheet, flavor properties, etc. can be obtained.Ca(PO.sub.4).sub.l (OH).sub.m (CO.sub.3).sub.n Y.sub.x(where Y stands for any optional anions other than phosphate group, hydroxyl group and carbonate group, l=0.4.about.0.6, m=0.1.about.0.4, n=0.about.0.2, x=0.about.0.2, 3.times.l+m+2.times.n+z.times.

Abstract: A biaxially oriented polyester film is suitable for laminating onto a metallic sheet so as to provide a laminate capable of being formed into a can. The polyester film comprises at least one of:(1) a polyester having a melting point of 246.degree. to 280.degree. C. and being such that when the laminate is formed into a can, then at a neck of the can the film provides an inner 1 to 3 .mu.m portion (a) close to the metallic sheet and an outer 1-3 .mu.m portion (b) remote from the metallic sheet, which said portions (a) and (b) have respective average orientation intensity ratios, as measured by Raman spectrometry, of 6 or less and 8 or more; and(2) a polyester layer (A) of a polyester having at least 93 mol % thereof of units derived from ethylene terephthalate and/or ethylene naphthalate and a polyester layer (B) of a polyester containing an ionomer and which film has a face orientation factor of 0.10 to.0.15.

Abstract: An apparatus and method for providing a boom extension for retractable booms of gantry cranes which does not require lowering the boom during attachment of the extension, or increasing the lift capacity of the boom hoist machinery, nor does the boom extension add bending moment to the retractable boom.

Abstract: A modified powder or particulate material having a silicone polymer film coated on substantially the entire surface thereof, this powder or particulate material being produced by bringing at least one silicone compound, in the form of a vapor, having the general formula (I):(R.sup.1 HSiO).sub.a (R.sup.2 R.sup.3 SiO).sub.b (R.sup.4 R.sup.5 R.sup.6 SiO.sub.1/2).sub.c (I)Wherein R.sup.1, R.sup.2, and R.sup.3 represent, independently, hydrogen or a hydrocarbon residue having 1 to 10 carbon atoms, which may be substituted with at least one halogen atom, provided that R.sup.1, R.sup.2, and R.sup.3 are not hydrogen at the same time, R.sup.4, R.sup.5, and R.sup.

Abstract: A modified powder or particulate material coated on substantially the entire surface thereof with a film of a silicone polymer carrying a pendant group thereon, this powder or particulate material being produced by a process comprising the steps of(a) coating the powder or particulate material with a film of a silicone polymer having at least one Si-H moiety, and(b) carrying out an addition reaction of a compound capable of reacting with an Si--H moiety to the Si--H moiety in the silicone polymer of step (a), whereby the pendant group derived from said compound is bonded to the silicone polymer.

Abstract: A modified powder or particulate material having a silicone polymer film coated on substantially the entire surface thereof, this powder or particulate material being produced by bringing at least one silicone compound, in the form of a vapor, having the general formula (I):(R.sup.1 HSiO).sub.a (R.sup.2 R.sup.3 SiO).sub.b (R.sup.4 R.sup.5 R.sup.6 SiO.sub.1/2).sub.c (I)wherein R.sup.1, R.sup.2, and R.sup.3 represent, independently, hydrogen or a hydrocarbon residue having 1 to 10 carbon atoms, which may be substituted with at least one halogen atom, provided that R.sup.1, R.sup.2, and R.sup.3 are not hydrogen at the same time, R.sup.4, R.sup.5, and R.sup.