Abstract: A manufacturing method of a glasswork component, includes: forming a compressive stress layer which ranges from one main surface to the other main surface of a glass substrate, along a scheduled cutting line, so as to be adjacent to the scheduled cutting line of the glass substrate; and cutting the glass substrate in the scheduled cutting line.

Abstract: A manufacturing method of a glasswork component, includes: forming a compressive stress layer which ranges from one main surface to the other main surface of a glass substrate, along a scheduled cutting line, so as to be adjacent to the scheduled cutting line of the glass substrate; and cutting the glass substrate in the scheduled cutting line.

Abstract: A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion.

Abstract: The coating film inspection apparatus according to one embodiment of the present invention comprises a terahertz-wave generator that generates a terahertz-wave; an irradiation optical system that irradiates, with the terahertz-wave, a sample with a film formed thereon; a terahertz-wave detector that detects a terahertz-wave reflected at the sample; and a control unit that shows an electric field intensity of the detected terahertz-wave in wave form data on a time axis to detect a plurality of peaks from the wave form data, and also calculates film thickness on the basis of time difference between peaks.

Abstract: A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).

Abstract: The coating film inspection apparatus according to one embodiment of the present invention comprises a terahertz-wave generator that generates a terahertz-wave; an irradiation optical system that irradiates, with the terahertz-wave, a sample with a film formed thereon; a terahertz-wave detector that detects a terahertz-wave reflected at the sample; and a control unit that shows an electric field intensity of the detected terahertz-wave in wave form data on a time axis to detect a plurality of peaks from the wave form data, and also calculates film thickness on the basis of time difference between peaks.

Abstract: A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).

Abstract: A chirped pulse amplifier (CPA) system having a mode-locked laser and a high-speed pulse selector, wherein the pulse selector modulates output pulses based upon an applied modulation voltage. A pulse selector may be an integrated electro-optic modulator, for example a LiNbO3 modulator, or an electro-absorption modulator. Difficulties related to free-space alignment and operational stability of some prior designs are reduced or eliminated. Fiber coupling generally simplifies beam delivery and alignment. Some embodiments include an erbium fiber (or erbium-ytterbium) based CPA system operating at a wavelength of approximately 1550 nanometers. Similar performance can be obtained at other wavelengths, for example a 1.06 micrometer Yb-doped fiber system. Moreover, high amplification and peak intensity at the output may be achieved while avoiding non-linear effects in the pulse selector, thereby providing for high intensity picosecond or femtosecond operation.

Abstract: A terahertz wave generating apparatus includes an excitation light source for outputting an excitation light at a predetermined wavelength, an optical crystal being excited by an irradiation with the excitation light in order to generate a terahertz wave and terahertz wave amplifying means for repeatedly performing an optical parametric amplification for the terahertz wave by use of the excitation light, wherein the terahertz wave amplifying means includes an optical waveguide having the optical crystal serving as a core and a medium serving as a clad whose refractive index is smaller than a refractive index of the optical crystal, and the inputted excitation light is propagated within the optical waveguide with fulfilling a condition for a total reflection.

Abstract: A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion.

Abstract: A chirped pulse amplifier (CPA) system having a mode-locked laser and a high-speed pulse selector, wherein the pulse selector modulates output pulses based upon an applied modulation voltage. A pulse selector may be an integrated electro-optic modulator, for example a LiNbO3 modulator, or an electro-absorption modulator. Difficulties related to free-space alignment and operational stability of some prior designs are reduced or eliminated. Fiber coupling generally simplifies beam delivery and alignment. Some embodiments include an erbium fiber (or erbium-ytterbium) based CPA system operating at a wavelength of approximately 1550 nanometers. Similar performance can be obtained at other wavelengths, for example a 1.06 micrometer Yb-doped fiber system. Moreover, high amplification and peak intensity at the output may be achieved while avoiding non-linear effects in the pulse selector, thereby providing for high intensity picosecond or femtosecond operation.

Abstract: A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion.

Abstract: A method of pulsed laser deposition (PLD) capable of continuously tuning formed-film morphology from that of a nanoparticle aggregate to a smooth thin film free of particles and droplets. The materials that can be synthesized using various embodiments of the invention include, but are not limited to, metals, alloys, metal oxides, and semiconductors. In various embodiments a ‘burst’ mode of ultrashort pulsed laser ablation and deposition is provided. Tuning of the film morphology is achieved by controlling the burst-mode parameters such as the number of pulses and the time-spacing between the pulses within each burst, the burst repetition rate, and the laser fluence. The system includes an ultrashort pulsed laser, an optical system for delivering a focused onto the target surface with an appropriate energy density, and a vacuum chamber in which the target and the substrate are installed and background gases and their pressures are appropriately adjusted.

Abstract: A chirped pulse amplifier (CPA) system having a mode-locked laser and a high-speed pulse selector, wherein the pulse selector modulates output pulses based upon an applied modulation voltage. A pulse selector may be an integrated electro-optic modulator, for example a LiNbO3 modulator, or an electro-absorption modulator. Difficulties related to free-space alignment and operational stability of some prior designs are reduced or eliminated. Fiber coupling generally simplifies beam delivery and alignment. Some embodiments include an erbium fiber (or erbium-ytterbium) based CPA system operating at a wavelength of approximately 1550 nanometers. Similar performance can be obtained at other wavelengths, for example a 1.06 .micrometer Yb-doped fiber system. Moreover, high amplification and peak intensity at the output may be achieved while avoiding non-linear effects in the pulse selector, thereby providing for high intensity picosecond or femtosecond operation.

Abstract: An erbium fiber (or erbium-ytterbium) based chirped pulse amplification system is illustrated. The use of fiber amplifiers operating in the telecommunications window enables the implementation of telecommunications components and telecommunications compatible assembly procedures with superior mechanical stability.

Abstract: A chirped pulse amplifier (CPA) system having a mode-locked laser and a high-speed pulse selector, wherein the pulse selector modulates output pulses based upon an applied modulation voltage. A pulse selector may be an integrated electro-optic modulator, for example a LiNbO3 modulator, or an electro-absorption modulator. Difficulties related to free-space alignment and operational stability of some prior designs are reduced or eliminated. Fiber coupling generally simplifies beam delivery and alignment. Some embodiments include an erbium fiber (or erbium-ytterbium) based CPA system operating at a wavelength of approximately 1550 nanometers. Similar performance can be obtained at other wavelengths, for example a 1.06 .micrometer Yb-doped fiber system. Moreever, high amplification and peak intensity at the output may be achieved while avoiding non-linear effects in the pulse selector, thereby providing for high intensity picosecond or femtosecond operation.

Abstract: A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion.

Abstract: An erbium fiber (or erbium-ytterbium) based chirped pulse amplification system is illustrated. The use of fiber amplifiers operating in the telecommunications window enables the implementation of telecommunications components and telecommunications compatible assembly procedures with superior mechanical stability.

Abstract: An erbium fiber (or erbium-ytterbium) based chirped pulse amplification system is illustrated. The use of fiber amplifiers operating in the telecommunications window enables the implementation of telecommunications components and telecommunications compatible assembly procedures with superior mechanical stability.

Abstract: An erbium fiber (or erbium-ytterbium) based chirped pulse amplification system is illustrated. The use of fiber amplifiers operating in the telecommunications window enables the implementation of telecommunications components and telecommunications compatible assembly procedures with superior mechanical stability.