Abstract: A process for producing nanoclusters of silicon and/or germanium exhibiting a permanent magnetic and/or electric dipole moment for adjusting the work function of materials, for micro- and nano-electronics, for telecommunications, for “nano-ovens”, for organic electronics, for photoelectric devices, for catalytic reactions and for fractionation of water.

Abstract: An organo electro chemical transistor based sensor including at least one set of source and drain electrodes, a plurality of gate electrodes for this set, at least one channel connected to the source and drain electrodes of the at least one set; and at least two gate electrodes being differently functionalized.

Abstract: An electronic control cell for at least one organic light-emitting diode (OLED) of a pixel or segment of an active matrix display, the cell including at least one control circuit (6,61,62) with a control input and operating relative to a control signal arriving at a control line (5,5?) and enabling to turn the OLED(s) on, one capacitive storage circuit of the control signal with a capacitor C connected to the control line, one selection circuit (4,41,42) operating relative to a selection signal Vsel on a selection line (3,3?) and enabling electrical connection or insulation of the capacitive storage circuit with/from a control voltage Vcom (2) relative to the selection signal. The storage is temporary by discharging the capacitor through a resistor Rf parallel to the capacitor. Operating methods and a display unit are also disclosed.

Abstract: Assembly of sensors formed as an imager with a detection brick including a photosensitive material, a brick for addressing and optionally processing signals from the sensor(s), an interconnection brick located between the detection brick and the addressing brick, this brick including connection pads, characterized in that the photosensitive material of the detection brick contains polymorphous silicon. The invention also relates to a method for the making of the latter.

Abstract: Assembly of sensors formed as an imager with a detection brick including a photosensitive material, a brick for addressing and optionally processing signals from the sensor(s), an interconnection brick located between the detection brick and the addressing brick, this brick including connection pads, characterized in that the photosensitive material of the detection brick contains polymorphous silicon. The invention also relates to a method for the making of the latter.