Abstract: An X-ray detection system includes at least two electrodes constructed and cooperatively arranged at a photoconductive material to provide an electric field inside the material in a first direction, an X-ray shield and an X-ray window, a readout circuitry, and a processing circuitry. The X-ray shield and the X-ray window are constructed and arranged to direct X-rays into the photoconductive material in a selected X-ray direction substantially different from the first direction, wherein the directed X-rays are absorbed at a location inside the photoconductive material at a depth corresponding to their energy. The read-out circuitry is constructed and arranged to receive electric signals corresponding to the absorption location inside the photoconductive material. The processing circuitry is constructed and arranged to determine the energy of the absorbed X-rays based on the electric signals.

Abstract: A plurality of phototransistors are connected in a matrix of rows and columns. Light falling on the phototransistors discharges the interelectrode capacitance between the emitter and collector of each phototransistor. Each phototransistor is permitted to discharge for a given period of time. A current source then charges the interelectrode capacitance back to its original level. The amount of time taken to recharge the interelectrode capacitance is a function of the intensity of the light falling on that phototransistor.

Abstract: A plurality of phototransistors are connected in a matrix of rows and columns. Light falling on the phototransistors discharges the interelectrode capacitance between the emitter and collector of each phototransistor. Each phototransistor is permitted to discharge for a given period of time. A current source then charges the interelectrode capacitance back to its original level. The amount of time taken to recharge the interelectrode capacitance is a function of the intensity of the light falling on that phototransistor.