Abstract: The invention concerns a silicon designed in particular for making solar cells containing a total of impurities ranging between 100 and 400 ppm, a boron content ranging between 0.5 and 3 ppm, a phosphorus/boron content ratio ranging between 1 and 3, and a content of metal elements ranging between 30 and 300 ppm. The invention also concerns a method for making such a silicon from an oxygen- or chorine-refined metallurgical silicon containing at least 500 ppm of metal elements, and comprising: refusion under neutral atmosphere of the refined silicon, in an electric furnace equipped with a hot crucible; transferring the molten silicon, to provide a plasma refining, in an electric furnace equipped with a hot crucible; plasma refining with as plasma-forming gas a mixture of argon and of at least a gas belonging the group consisting of chlorine, fluorine, HCI and HF; casting under controlled atmosphere in an ingot mold wherein is produced segregated solidification.

Abstract: The device for producing a sheet of crystalline material by directional solidification of a material in liquid phase composed of a crucible provided with a bottom, side walls and at least one horizontal outlet slot arranged on a bottom part of a side wall. On its external surface in immediate proximity to the slot, the crucible presents electromagnetic means for creating magnetic repulsion forces on the material in liquid phase, at least at the level of the slot. An alternating current with a frequency comprised between 10 kHz and 300 kHz flows through the electromagnetic means. To foster stirring of the material in liquid phase, a low frequency can be used in addition to the above frequencies.

Abstract: The present invention relates to a silicon refining installation, having a cold sectorized induction crucible, having its internal wall lined with a refractory material.

Abstract: The invention concerns a silicon designed in particular for making solar cells containing a total of impurities ranging between 100 and 400 ppm, a boron content ranging between 0.5 and 3 ppm, a phosphorus/boron content ratio ranging between 1 and 3, and a content of metal elements ranging between 30 and 300 ppm. The invention also concerns a method for making such a silicon from an oxygen- or chorine-refined metallurgical silicon containing at least 500 ppm of metal elements, and comprising: refusion under neutral atmosphere of the refined silicon, in an electric furnace equipped with a hot crucible; transferring the molten silicon, to provide a plasma refining, in an electric furnace equipped with a hot crucible; plasma refining with as plasma-forming gas a mixture of argon and of at least a gas belonging the group consisting of chlorine, fluorine, HCI and HF; casting under controlled atmosphere in an ingot mould wherein is produced segregated solidification.

Abstract: The invention concerns a method which consists in: simultaneously subjecting the meniscus of the molten metal present in the ingot mould to the action of an axial alternating electromagnetic field tending to provide it with a general dome-like shape and to the action of a transverse direct electromagnetic field designed to attenuate the surface agitation of the meniscus. The implementing installation comprises an ingot mould (1) with cooled assembled plates (2, 3 and 4, 5) for casting metal slabs, an alternating current coil (17) enclosing the ingot mould at the meniscus (12) of the molten metal to produce an axial magnetic field, collinear with the casting axis (11), and a direct magnetic field winding passing through the large plates of the ingot mould at the meniscus (12) perpendicular to the casting axis.