Patents by Inventor Yves Henry

Yves Henry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240129293
    Abstract: Techniques for (i) using contextual information associated with an exposed credential to identify a resource that could be accessed using the exposed credential, (ii) identifying a responsible entity of that resource, and (iii) alerting the responsible entity about the exposed credential are disclosed. A credential is determined to be in an exposed state. The exposed credential, if used, could potentially provide an actor access to a resource, despite the fact that the actor should not have access to the resource. The exposed credential is analyzed to determine a context. Based on that context, the resource is identified. A responsible entity associated with the resource is identified. An alert is then sent to that entity.
    Type: Application
    Filed: October 17, 2022
    Publication date: April 18, 2024
    Inventors: Michael Christopher FANNING, Suvam MUKHERJEE, Jacek Andrzej CZERWONKA, Christopher Michael Henry FAUCON, Eddy Toshiyuki OKADA NAKAMURA, Danielle Nicole GONZALEZ, Nicolas Yves Couraud, Alison Lynne MACLELLAN
  • Publication number: 20240126917
    Abstract: Techniques for identifying an exposed credential that, if used, would provide access to a resource are disclosed. The techniques enable the resource to remain online while (i) a new credential is allocated for the resource, (ii) the resource is transitioned to using the new credential instead of the exposed credential, and (iii) the exposed credential is attempted to be invalidated. A credential is accessed. This credential is suspected of being in an exposed state. The credential is accessible from within an artifact and is determined to be in the exposed state. A new credential is generated. This new credential is designed to replace the exposed credential. An instruction is transmitted to the resource to cause it to transition from using the exposed credential to using the new credential. The exposed credential is then invalidated.
    Type: Application
    Filed: October 17, 2022
    Publication date: April 18, 2024
    Inventors: Michael Christopher FANNING, Nicolas Yves COURAUD, Jacek Andrzej CZERWONKA, Christopher Michael Henry FAUCON, Yingting YU, Etan Micah BASSERI, Floyd Odiwuor K'OTOHOYOH, Jacek Ernest LICHWA
  • Publication number: 20080255003
    Abstract: A substrate in contact with a solution of polymerisable monomer(s) is subjected to patterned localised heating by means of a scannable laser, causing local polymerisation with generation of a pattern of polymer. The resulting patterned polymer array can be used e.g. in assay devices.
    Type: Application
    Filed: May 23, 2005
    Publication date: October 16, 2008
    Applicant: CRANFIELD UNIVERSITY
    Inventors: Sergey Anatoliyovich Piletsky, David Charles Cullen, Olivier Yves Henry
  • Patent number: 5973055
    Abstract: The invention relates to a water repellent composition (<<Rain Repellent>>), comprising a hydrophobic agent and a solvent compatible with the hydrophobic active agent, characterized in that the solvent comprises at least one fluorinated hydrocarbon, liquid at ambient temperature, and in that the active hydrophobic agent is a compound of organopolysiloxane type.The invention also relates to a disposable pressurized container containing the above composition and an inert gas.The invention finds application in particular in the removal of water from a surface especially the windscreen of vehicles or aircraft.
    Type: Grant
    Filed: December 19, 1997
    Date of Patent: October 26, 1999
    Assignees: Aerospatiale Societe Nationale Industrielle, Elf Atochem S.A.
    Inventors: Pascal Michaud, Bruno Costes, Yves Henry, Pierre Lascours
  • Patent number: 5034795
    Abstract: Disclosed is a substrate particularly designed to bear an active structure made according to thin-film technology. The advantage of the disclosed substrate is that it can be made in large sizes and at low cost. To this end, the substrate 1 has an soda-lime glass plate passivated by means of two superimposed layers. The layer in contact with the glass plate is a barrier layer against the alkaline constituents and the layer deposited on the barrier layer has the function of preventing the effect, on the barrier layer, of the products designed to etch the elements that form the active structure.
    Type: Grant
    Filed: November 9, 1989
    Date of Patent: July 23, 1991
    Assignee: Thomson Tubes Electroniques
    Inventor: Yves Henry
  • Patent number: 4980553
    Abstract: A radiological image detector of the type formed by a matrix of photosensitive elements, associated with a light source, enables a resetting of the voltages at the terminals of the photosensitive elements, the light source and the photosensitive matrix being connected to each other so as to give the image detector a particularly small thickness. To this end, the light source includes a stack of semiconducting layers forming at least one electroluminescent diode having, as its support, a substrate of the matrix.
    Type: Grant
    Filed: April 27, 1989
    Date of Patent: December 25, 1990
    Assignee: Thomson-CSF
    Inventor: Yves Henry
  • Patent number: 4940901
    Abstract: The disclosure concerns devices for the conversion of images into electronic signals with particular application to X-ray imaging. Instead of forming, on an insulating glass substrate, a strip or matrix of photosensitive elements (PIN diodes) which are then coated with a scintillating sheet bonded to or pressed against the upper surface of the photosensitive elements, a scintillating layer is deposited on the substrate before forming the photosensitive elements. Thus, a gain in sensitivity and definition is achieved. It is moreover possible to preserve, in addition to the scintillating layer deposited between the substrate and the photosensitive elements, a scintillating layer bonded to or pressed against the upper surface of the unit. The two scintillators may be identical or different in nature. If they are different, they may react to different wavelengths but may also emit in different wavelengths.
    Type: Grant
    Filed: November 7, 1988
    Date of Patent: July 10, 1990
    Assignee: Thomson-CSF
    Inventors: Yves Henry, Marc Arques
  • Patent number: 4829355
    Abstract: A photocathode having internal amplification includes a first electrode adapted for receiving a first voltage, and for transmitting received photons. An absorption layer is disposed adjacent the first electrode and comprises a P-type semiconductor material having a forbidden band of sufficiently small width to cause photons received through said first electrode to be converted into electron-hole pairs. At least one ionization-induced electron multiplication layer is disposed adjacent the absorption layer. Each such multiplication layer comprises two layers of N-type semiconductor material having respectively two different compositions at an interface therebetween. The two different compositions at the interface cause the multiplication layer, when biased, to accelerate the electrons received from the absorption layer to a degree greater than the acceleration provided to the holes received from the absorption layer.
    Type: Grant
    Filed: December 17, 1986
    Date of Patent: May 9, 1989
    Assignee: Thomson-CSF
    Inventors: Bernard Munier, Paul de Groot, Claude Weisbuch, Guy Moiroud, Yves Henry
  • Patent number: 4751423
    Abstract: A photocathode having a low dark current comprises a first layer consisting of P.sup.+ type semiconductor material which is transparent to all wavelengths of the light to be detected, a second layer consisting of P.sup.
    Type: Grant
    Filed: November 24, 1986
    Date of Patent: June 14, 1988
    Assignee: Thomson CSF
    Inventors: Bernard Munter, Paul de Groot, Claude Weisbuch, Yves Henry
  • Patent number: 4749903
    Abstract: In one example of construction, a high-performance photocathode has the following structure:a transparent layer formed of P.sup.+ type semiconductor material having a forbidden band of sufficient width to ensure that this layer is transparent to the photons of the light to be detected;an absorption layer constituted by ten first sublayers formed of P.sup.
    Type: Grant
    Filed: November 24, 1986
    Date of Patent: June 7, 1988
    Assignee: Thomson CSF
    Inventors: Bernard Munier, Paul de Groot, Claude Weibuch, Yves Henry
  • Patent number: 4665609
    Abstract: The surface of a substrate which includes a plurality of photovoltaic junctions spaced along it is prepared as follows: a first anodic oxide layer is formed to cover the whole surface of the substrate and ensures perfect control of the photovoltaic junctions, a second layer is deposited of metal which is impervious to the radiation to be detected, then through photolithography, only the zones of the second layer that it is desired to render impervious to the radiation to be detected are maintained and the remainder removed; and finally, a layer of dielectric material is deposited to cover the whole surface.
    Type: Grant
    Filed: December 21, 1984
    Date of Patent: May 19, 1987
    Assignee: Thomson - CSF
    Inventors: Yves Henry, Andre Nicollet, Michel Villard
  • Patent number: 4650659
    Abstract: The invention relates to a process for the preparation of bismuth germanate of formula Bi.sub.4 Ge.sub.3 O.sub.12.According to this process, into an aqueous solution is introduced a bismuth compound such as Bi(NO.sub.3).sub.3, 5H.sub.2 O and a germanium compound such as GeO.sub.2, which are respectively able to release into the solution soluble bismuth complexes and soluble germanium complexes. The pH and temperature of the solution in the stability range of the Bi.sub.4 Ge.sub.3 O.sub.12 phase are then brought to value such that there is a simultaneous release of soluble bismuth and germanium complexes and they are reacted to form a precipitate of Bi.sub.4 Ge.sub.3 O.sub.12. The pH is generally approximately 0.5 to 5 and the temperature is below 120.degree. C.
    Type: Grant
    Filed: February 4, 1986
    Date of Patent: March 17, 1987
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Jean-Yves Henry