Abstract: Making a quantum device structure comprising: a substrate (10) provided with a crystalline silicon surface layer (102), a Josephson junction (160) formed by a first metal portion (132), a superconducting material (134), coated with an insulating zone (145), the insulating zone itself being coated with a second metal portion (152) of a superconducting material (134) and embedding the insulating zone (145) and the first metal portion (132), the first metal portion (132) and the second metal portion (152) being arranged on and in contact with a so-called “protective” layer (116) arranged on or in the substrate (10).

Abstract: A method for manufacturing an integrated circuit, includes providing a stack including a substrate and a dielectric layer disposed on the substrate, the substrate being formed from a semiconductor material having a resistivity greater than or equal to 500 ?.cm, etching trenches extending through the dielectric layer and opening onto the substrate; etching the substrate isotropically and selectively with respect to the dielectric layer to form first cavities in the substrate; depositing a mobile electrical charge-trapping layer on the walls of the first cavities and on the side walls of the trenches so as to fill in the trenches in the dielectric layer, thus closing the first cavities in the substrate; and forming passive components vertically with respect to the first cavities.

Abstract: Method for making a transistor, comprising: making, on a substrate, a gate surrounded by a dielectric material; depositing a stop layer on the gate and the dielectric material; etching the stop layer in accordance with an active region pattern, forming a channel location located on the gate; etching the dielectric material located in the active region pattern, forming source and drain locations; depositing a semimetal material in the channel, source and drain locations; planarizing the semimetal material; crystallizing the semimetal material, forming the channel and the source and drain; and wherein the semimetal material of the channel is semiconductive and the semimetal material of the source and drain is electrically conductive.

Abstract: There is provided a method for producing, on one same wafer, at least one first transistor surmounted at least partially on a voltage stressed layer and a second transistor surmounted at least partially on a compression stressed layer, the method including providing a wafer including the first and the second transistors; forming at least one stressed nitride-based layer, on the first and the second transistors, the layer being voltage stressed; depositing a protective layer so as to cover a first zone of the layer, the first zone covering at least partially the first transistor and leaving a second zone of the layer uncovered, the second zone at least partially covering the second transistor; and modifying a type of stress of the second zone of the layer by implanting hydrogen-based ions from a plasma in the second zone, such that the second zone of the layer is compression stressed.

Abstract: Method for making a transistor, comprising: making, on a substrate, a gate surrounded by a dielectric material; depositing a stop layer on the gate and the dielectric material; etching the stop layer in accordance with an active region pattern, forming a channel location located on the gate; etching the dielectric material located in the active region pattern, forming source and drain locations; depositing a semimetal material in the channel, source and drain locations; planarizing the semimetal material; crystallizing the semimetal material, forming the channel and the source and drain; and wherein the semimetal material of the channel is semiconductive and the semimetal material of the source and drain is electrically conductive.

Abstract: There is provided a method for manufacturing a transistor from a stack including at least one gate pattern comprising at least one flank, the method including forming at least one gate spacer over at least the flank of the gate pattern; and reducing, after a step of exposure of the stack to a temperature greater than or equal to 600° C., of a dielectric permittivity of the at least one gate spacer, the reducing including at least one ion implantation in a portion at least of a thickness of the at least one gate spacer.

Abstract: There is provided a method for producing, on one same plate, at least one first transistor surmounted at least partially on a voltage stressed layer and a second transistor surmounted at least partially on a compression stressed layer, the method including providing a plate including the first and the second transistors; forming at least one stressed nitride-based layer, on the first and the second transistors, the layer being voltage stressed; depositing a protective layer so as to cover a first zone of the layer, the first zone covering at least partially the first transistor and leaving a second zone of the layer uncovered, the second zone at least partially covering the second transistor; and modifying a type of stress of the second zone of the layer by implanting hydrogen-based ions from a plasma in the second zone, such that the second zone of the layer is compression stressed.

Abstract: A MOS transistor manufacturing method, including: forming a first conductive or semiconductor layer; forming a sacrificial gate on the first layer and a second layer made of an insulating material laterally surrounding the sacrificial gate; forming, on either side of the sacrificial gate, source and drain electric connection elements crossing the second layer and contacting the first layer; removing the sacrificial gate and the portion of the first layer located vertically in line with the sacrificial gate; depositing a third layer made of a two-dimensional semiconductor material; depositing a fourth layer made of an insulating material on the third layer; and forming a conductive gate in the opening, on the fourth layer.

Abstract: A MOS transistor manufacturing method, including: forming a first conductive or semiconductor layer; forming a sacrificial gate on the first layer and a second layer made of an insulating material laterally surrounding the sacrificial gate; forming, on either side of the sacrificial gate, source and drain electric connection elements crossing the second layer and contacting the first layer; removing the sacrificial gate and the portion of the first layer located vertically in line with the sacrificial gate; depositing a third layer made of a two-dimensional semiconductor material; depositing a fourth layer made of an insulating material on the third layer; and forming a conductive gate in the opening, on the fourth layer.

Abstract: A method for producing at least one pattern in a layer resting on a substrate, including: a) making amorphous at least one first block of an upper layer of crystalline material resting on a first amorphous supporting layer, while the crystalline structure of a second block of the upper layer that adjoins and is juxtaposed with the first block is preserved; b) partially recrystallizing the first block by using at least one side surface of the second block that is in contact with the first block as an area for the start of a recrystallization front, the partial recrystallization being carried out to preserve a region of amorphous material in the first block; c) selectively etching the amorphous material of the upper layer with respect to the crystalline material of the upper layer to form at least one first pattern in the upper layer.

Abstract: The invention relates to a method for manufacturing a transistor comprising the preparation of a stack of layers of the semiconductor on insulator type comprising at least one substrate on which an insulating layer and an initial semiconductor layer are successively disposed. The method includes the formation of at least one oxide pad extending from a top face of the insulating layer, the formation of an additional layer made from semiconductor material covering the oxide pad and intended to form a channel for the transistor, the formation of a gate stack above the oxide pad, and the formation of a source and drain on either side of the gate stack.

Abstract: Method for creation of stressed channel structure transistors wherein at least one amorphizing ion implantation of the surface layer of a substrate of the semiconductor-on-insulator type is carried out through openings in a mask, so as to render zones of the surface layers amorphous and to induce relaxation of a zone intended to form a channel and located between the zones that have been rendered amorphous, the relaxation being carried out in a direction orthogonal to that in which it is intended that the channel current flows.

Abstract: A process for manufacturing a Schottky barrier field-effect transistor is provided. The process includes: providing a structure including a control gate and a semiconductive layer positioned under the gate and having protrusions that protrude laterally with respect to the gate; anisotropically etching at least one of the protrusions by using the control gate as a mask, so as to form a recess in this protrusion, this recess defining a lateral face of the semiconductive layer; depositing a layer of insulator on the lateral face of the semiconductive layer; and depositing a metal in the recess on the layer of insulator so as to form a contact of metal/insulator/semiconductor type between the deposit of metal and the lateral face of the semiconductive layer.

Abstract: A method of fabrication, including the steps for supplying a substrate including a layer of semiconductor material covered by a sacrificial gate including a sacrificial gate insulator including a middle part, and edges covered by sacrificial spacers and having a thickness tox; removal of the sacrificial gate insulator and the sacrificial gate material; formation of a conformal deposition of thickness thk of dielectric material inside of the groove formed in order to form a gate insulator, with tox>thk?tox/2; formation of a gate electrode within the groove; removal of the sacrificial spacers so as to open up edges of the gate insulator layer; formation of spacers on the edges of the gate insulator layer on either side of the gate electrode, these spacers having a dielectric constant at the most equal to 3.5.

Abstract: A method is provided for producing a microelectronic device provided with different strained areas in a superficial layer of a semi-conductor on insulator type substrate, including amorphizing a region of the superficial layer and then a lateral recrystallization of the region from crystalline areas adjoining the region.

Abstract: A method of modifying a strain state of a first channel structure in a transistor is provided, said structure being formed from superposed semiconducting elements, the method including providing on a substrate at least one first semiconducting structure formed from a semiconducting stack including alternating elements based on at least one first semiconducting material and elements based on at least one second semiconducting material different from the first material; then removing portions of the second material from the first semiconducting structure by selective etching, the removed portions forming at least one empty space; filling the empty space with a dielectric material; forming a straining zone on the first semiconducting structure based on a first strained material having an intrinsic strain; and performing thermal annealing to cause the dielectric material to creep, and to cause a change in a strain state of the elements based on the first material.

Abstract: A method for producing at least one pattern in a layer resting on a substrate, including: a) making amorphous at least one first block of an upper layer of crystalline material resting on a first amorphous supporting layer, while the crystalline structure of a second block of the upper layer that adjoins and is juxtaposed with the first block is preserved; b) partially recrystallizing the first block by using at least one side surface of the second block that is in contact with the first block as an area for the start of a recrystallization front, the partial recrystallization being carried out to preserve a region of amorphous material in the first block; c) selectively etching the amorphous material of the upper layer with respect to the crystalline material of the upper layer to form at least one first pattern in the upper layer.

Abstract: A field-effect transistor, including a source, drain and channel formed in a semiconductor layer a gate stack placed above the channel, including a metal electrode, a first layer of electrical insulator placed between the metal electrode and the channel, and a second layer of electrical insulator covering the metal electrode; a metal contact placed plumb with the source or drain and at least partially plumb with said gate stack; and a third layer of electrical insulator placed between said metal contact and said source or said drain.

Abstract: A method of fabrication, including the steps for supplying a substrate including a layer of semiconductor material covered by a sacrificial gate including a sacrificial gate insulator including a middle part, and edges covered by sacrificial spacers and having a thickness tox; removal of the sacrificial gate insulator and the sacrificial gate material; formation of a conformal deposition of thickness thk of dielectric material inside of the groove formed in order to form a gate insulator, with tox>thk?tox/2; formation of a gate electrode within the groove; removal of the sacrificial spacers so as to open up edges of the gate insulator layer; formation of spacers on the edges of the gate insulator layer on either side of the gate electrode, these spacers having a dielectric constant at the most equal to 3.5.

Abstract: The invention relates to a process for fabricating an integrated circuit (1), comprising the steps of: providing a substrate (100), the substrate being equipped with first and second dummy gates and with an encapsulation layer (106); removing the first and second dummy gates in order to make first and second grooves (23, 33) in said encapsulation layer (106); simultaneously depositing a gate insulating layer (107) at least in the bottom of the first groove and on a side wall of the second groove; forming a gate electrode of said transistor (2) in the first groove, forming source and drain electrodes of said transistor on either side of said gate electrode, forming first and second electrodes of said memory cell on either side of said gate insulating layer deposited on a side wall of the second groove.