Abstract: This invention relates to a process for producing a matrix of "all optical" vertically-structured quantum well components.This process consists in the encapsulation of a half-structure constituted by a lower mirror (2) and an active zone (3) partially covered by a self-alignment mask (4) with a negative dielectric layer (7) whose thickness is given by the Bragg condition at the working wavelength. The encapsulated half-structure is thermally treated to induce an alloy interdiffusion (9) in the non-covered parts of the active zone, and covered with one or several negative and positive layers (10,11) so as to complete the upper Bragg mirror.

Abstract: This invention relates to a process for producing an electrically controllable matrix of vertically-structured quantum well components from a substrate on which a lower Bragg mirror has been "epitaxiated", which said mirror is made up of one or several alternations of semiconductor thin layers surmounted by an active layer consisting of compound III/V-based quantum well heterostructures, characterized in that:a) the active quantum well layer is encapsulated with a dielectric layer capable of inducing an alloy interdiffusion in the quantum well layer,b) the said dielectric layer (3) is etched in such a way as to create a self-alignment mask (4),c) the substrate covered by the self-alignment mask is treated thermally so as to create modified regions (7) by alloy interdiffusion in the active layer,d) an upper mirror (8), in semiconductor material doped inversely to the lower mirror, is deposited by epitaxial growth in the recesses of the mask with regard to the regions of the non-interdiffused active zone,e) the

Abstract: An antonomous container permits the vacuum transportation of any random small object and the performance of operations within a container (1) or lock (2), without it being necessary to transfer the object (10) into a working station (3). The container according to the invention is small and is provided with shielding windows (12). Therefore the object (10) can be observed within the container (1) during the operations performed within the said container (1). The latter can be transferred for supplementary operations with respect to the object (10) to the working station (3) by means of a manipulating rod (30). Application to the growth of integrated circuits in microelectronics.

Abstract: The process for the photochemical treatment of a solid material consists of exposing the latter to light pulses produced by at least one glow discharge elongated tube (4) having a rare gas under low pressure and whereof the gas, the pressure and the characteristics of the discharge are adapted to said material and its precursors, each pulse containing an extensive emission spectrum between 160 and 5000 nm. An electrical circuit with modulatable electrical characteristics (LC) makes it possible to modulate the discharge characteristics of the tube and the storage of the energy necessary for said discharge.

Abstract: Heat flash vapor phase deposition process of an insulating layer on a III-V material substrate and its application to the production of a MIS structure. Using the same enclosure, said process comprises carrying out an ethching of a III-V substrate (2), forming on said substrate at least one protective layer (8,10) for the substrate surface constituting the active zone (6) of the MIS structure, or even producing the active layer by epitaxy, depositing an insulating layer (12) by CVD at high temperature produced by irradiating the surface of the sample (1) with tungsten halogen lamps and optionally forming on the insulating layer (12) a conductive layer (14) at high temperature by irradiation with tungsten halogen lamps, thus completing the MIS structure.

Abstract: Process for depositing and crystallizing a thin layer of organic material by means of a beam of energy.A compact block formed of organic material is disposed adjacent one of the faces of the substrate, the block is subjected through the substrate to the action of a laser beam, so as to desorb the organic material forming the block, the substrate being optically transparent to the beam, and a relative displacement is performed between the substrate and the beam in order to sweep such faces over a given path, to enable the desorbed material to be deposited on the face of the substrate opposite the block, and the material thus deposited to be crystallized in a quasi-crystalline form.Application to the manufacture of integrated optical products, such as lenses, mirrors, networks and the manufacture of opto-electronic components.