Abstract: A coating and developing device comprises a front end module (100), a process station (200), and an interface station (300) that are successively connected, wherein the process station (200) comprises a coating unit (210), a developing unit (220), at least one transversely moving of mobile conveying part (230), and at least one side robot (R0). After a substrate has been processed in the coating unit (210), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the interface station (300) by the mobile conveying part (230). After the substrate has been processed in the developing unit (220), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the front end module (100) by the mobile conveying part (230).

Abstract: The invention relates to an equipment for semiconductor production, in particular to a heat treatment apparatus. The apparatus comprises a cooling unit (200), a heating unit (300) and a transmission unit (400). The cooling unit (200) comprises a cooling plate (210) for cooling a substrate (w), and the heating unit (300) comprises a heating plate (310) for heating the substrate (w). The transmission unit (400) comprises a transmission arm (410), a lifting module and a linear module. The transmission arm (410) supports the substrate (w) and transmits the substrate (w) between the cooling unit (200) and the heating unit (300). The transmission arm (410) is disposed on the lifting module, and the lifting module drives the transmission arm (410) to ascend and descend. The linear module drives the transmission arm (410) to transmit the substrate (w) between the cooling plate (210) and the heating plate (310). The internal space of the apparatus is optimized.

Abstract: A coating and developing device comprises a front end module (100), a process station (200), and an interface station (300) that are successively connected, wherein the process station (200) comprises a coating unit (210), a developing unit (220), at least one transversely moving of mobile conveying part (230), and at least one side robot (R0). After a substrate has been processed in the coating unit (210), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the interface station (300) by the mobile conveying part (230). After the substrate has been processed in the developing unit (220), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the front end module (100) by the mobile conveying part (230).

Abstract: A high-temperature tube furnace comprises: a process tube (1) with a top cover (101) arranged on the top end thereof, the top cover (101) being provided with through holes (1011); a gas supply pipe (2) communicating with the through holes (1011) of the top cover (101) of the process tube (1), process gas being introduced into the process tube (1) through the gas supply pipe (2) and the through holes (1011) of the top cover (101) of the process tube (1); a wafer boat (3) arranged in the process tube (1), and comprising a supporting frame (301) and supporting plates (302), the supporting plates (302) being distributed in multiple layers along the length direction of the supporting frame (301) and used for supporting multiple substrates (w), each substrate (w) being placed on one supporting plate and each supporting plate supporting the entire bottom of the substrate (w).

Abstract: Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation.

Abstract: Embodiments of the present invention provide a substrate processing apparatus comprising a chemical liquid processing apparatus. The chemical liquid processing apparatus includes a first chemical liquid processing part, a second chemical liquid processing part configured to be stacked with the first chemical liquid processing part, a heating processing part located opposite the first chemical liquid processing part and the second chemical liquid processing part and a substrate transferring part located between the first and second chemical liquid processing parts and the heating processing part. The substrate transferring part is configured to have at least two first robots, at least one second robot and at least one third robot, all of which are arranged in parallel layers, and at least one pair of first buffer units located between two adjacent first robots and configured for loading and unloading the substrates therein and therefrom via the at least one second robot.