Abstract: The invention provides a fingered decoupling capacitor in the bulk silicon region that are formed by etching a series of minimum or sub-minimum trenches in the bulk silicon region, oxidizing these trenches, removing the oxide from at least one or more disjoint trenches, filling all the trenches with either in-situ doped polysilicon, intrinsic polysilicon that is later doped through ion implantation, or filling with a metal stud, such as tungsten and forming standard interconnects to the capacitor plates.

Abstract: A thermal monitor diode is provided that comprises a silicon thin film on an insulator mounted on a silicon substrate. An opening extends through the silicon thin film and through the insulator and partially into the silicon substrate and terminates at an end wall. A conductive material is disposed in the opening and extends to the end wall. The substrate has a P/N junction formed therein adjacent the end wall, and an insulating spacer material surrounds the conductive material and is sufficiently thin to allow temperature excursions in the silicon thin film to pass therethrough. The invention also contemplates a method of forming the diode.

Abstract: Disclosed is a method and apparatus for autonomously self-monitoring and self-adjusting the operation of an integrated circuit device throughout the integrated circuit device's useful life. The invention periodically performs performance self-testing on the integrated circuit device throughout the integrated circuit devices useful life. The invention also evaluates whether results from the self-testing are within acceptable limits and self-adjusts parameters of the integrated circuit device until the results from the self-testing are within the acceptable limits.

Abstract: A method and apparatus for providing a more accurate reading of the junction temperature within an Integrated Circuit (IC) where temperature sensing elements are used that are sensitive to process changes. The apparatus stores an offset value in the IC that is used by internal temperature reading circuitry to adjust the temperature read/calculated from the sensing elements to more accurately reflect the actual junction temperature.