Patents by Inventor Zachary D. Beaman

Zachary D. Beaman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated assemblies, and methods of forming integrated assemblies
    Patent number: 11903201
    Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: February 13, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Gordon A. Haller, William R. Kueber, Zachary D. Beaman, Christopher G. Shea, Taehyun Kim
  • Integrated Assemblies, and Methods of Forming Integrated Assemblies
    Publication number: 20230413561
    Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.
    Type: Application
    Filed: September 1, 2023
    Publication date: December 21, 2023
    Applicant: Micron Technology, Inc.
    Inventors: Gordon A. Haller, William R. Kueber, Zachary D. Beaman, Christopher G. Shea, Taehyun Kim
  • Integrated Assemblies, and Methods of Forming Integrated Assemblies
    Publication number: 20210358950
    Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.
    Type: Application
    Filed: August 2, 2021
    Publication date: November 18, 2021
    Applicant: Micron Technology, Inc.
    Inventors: Gordon A. Haller, William R. Kueber, Zachary D. Beaman, Christopher G. Shea, Taehyun Kim
  • Integrated assemblies, and methods of forming integrated assemblies
    Patent number: 11088165
    Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: August 10, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Gordon A. Haller, William R. Kueber, Zachary D. Beaman, Christopher G. Shea, Taehyun Kim
  • Integrated Assemblies, and Methods of Forming Integrated Assemblies
    Publication number: 20210175248
    Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 10, 2021
    Applicant: Micron Technology, Inc.
    Inventors: Gordon A. Haller, William R. Kueber, Zachary D. Beaman, Christopher G. Shea, Taehyun Kim