Abstract: An amplifier cell apparatus has an RF input node, a first power transistor in communication with the input node through a first input impedance matching network, a second power transistor in communication with the input node through a second input impedance matching network, and an RF output node in communication with the first and second power transistors through a single output impedance matching network so that the first and second input impedance matching networks are disposed on an RF input side of the amplifier cell.

Abstract: An amplifier cell apparatus has an RF input node, a first power transistor in communication with the input node through a first input impedance matching network, a second power transistor in communication with the input node through a second input impedance matching network, and an RF output node in communication with the first and second power transistors through a single output impedance matching network so that two impedance matching networks are disposed on an RF input side of the amplifier cell.

Abstract: A cascode gain stage apparatus includes an input transistor having an RF input node and a transistor output node, an output transistor having a transistor input node and an RF output node, and a DC blocking capacitor connected between the transistor input and transistor output nodes.

Abstract: A transistor, a method and an apparatus for forming multiple connections to a transistor for reduced gate (FET/HEMT) or base (BJT/HBT) parasitics, and improved multi-finger transistor thermal impedance. Providing for a method and an apparatus that reduces a transistor's parasitics and reduces a transistor's thermal impedance, resulting in higher device bandwidths and higher output power. More particularly, providing for a method and an apparatus for applying compact, multiple connections to the gate of a FET (or HEMT) or the base of a BJT (or HBT) from many sides resulting in reduced parasitics and improved transistor thermal impedance.

Abstract: A transistor, a method and an apparatus for forming multiple connections to a transistor for reduced gate (FET/HEMT) or base (BJT/HBT) parasitics, and improved multi-finger transistor thermal impedance. Providing for a method and an apparatus that reduces a transistor's parasitics and reduces a transistor's thermal impedance, resulting in higher device bandwidths and higher output power. More particularly, providing for a method and an apparatus for applying compact, multiple connections to the gate of a FET (or HEMT) or the base of a BJT (or HBT) from many sides resulting in reduced parasitics and improved transistor thermal impedance.

Abstract: A transistor, a method and an apparatus for forming multiple connections to a transistor for reduced gate (FET/HEMT) or base (BJT/HBT) parasitics, and improved multi-finger transistor thermal impedance. Providing for a method and an apparatus that reduces a transistor's parasitics and reduces a transistor's thermal impedance, resulting in higher device bandwidths and higher output power. More particularly, providing for a method and an apparatus for applying compact, multiple connections to the gate of a FET (or HEMT) or the base of a BJT (or HBT) from many sides resulting in reduced parasitics and improved transistor thermal impedance.

Abstract: A transistor, a method and an apparatus for forming multiple connections to a transistor for reduced gate (FET/HEMT) or base (BJT/HBT) parasitics, and improved multi-finger transistor thermal impedance. Providing for a method and an apparatus that reduces a transistor's parasitics and reduces a transistor's thermal impedance, resulting in higher device bandwidths and higher output power. More particularly, providing for a method and an apparatus for applying compact, multiple connections to the gate of a FET (or HEMT) or the base of a BJT (or HBT) from many sides resulting in reduced parasitics and improved transistor thermal impedance.

Abstract: An operational amplifier may include a transimpedance input stage. The operational amplifier is capable of self-biasing its input voltage(s) including a first stage, an input source connected to the first stage, an output stage connected to the first stage via feedback resistors, and feedback current sources connected to the first stage, wherein the feedback current sources are set to generate feedback currents flowing from the output stage back to the input stage via the feedback resistors, so as to self-bias the input voltage(s) at the input stage. A method for allowing for an op-amp to self-bias its input voltage(s), including generating feedback currents flowing from the output stage back to the input stage via feedback resistors, so as to self-bias the input voltage(s) at the input stage.

Abstract: An operational amplifier may include a transimpedance input stage. The operational amplifier is capable of self-biasing its input voltage(s) including a first stage, an input source connected to the first stage, an output stage connected to the first stage via feedback resistors, and feedback current sources connected to the first stage, wherein the feedback current sources are set to generate feedback currents flowing from the output stage back to the input stage via the feedback resistors, so as to self-bias the input voltage(s) at the input stage. A method for allowing for an op-amp to self-bias its input voltage(s), including generating feedback currents flowing from the output stage back to the input stage via feedback resistors, so as to self-bias the input voltage(s) at the input stage.

Abstract: The present invention relates generally to an operational amplifier. In one embodiment, the present invention is an operational amplifier including a transimpedance input stage, the transimpedance input stage including a first stage connected to a first resistor and a second resistor, and an output stage connected to the transimpedance input stage.

Abstract: The present invention relates generally to an operational amplifier. In one embodiment, the present invention is an operational amplifier including a transimpedance input stage, the transimpedance input stage including a first stage connected to a first resistor and a second resistor, and an output stage connected to the transimpedance input stage.

Abstract: The present invention relates generally to an operational amplifier. In one embodiment, the present invention is an operational amplifier including a transimpedance input stage, the transimpedance input stage including a first stage connected to a first resistor and a second resistor, and an output stage connected to the transimpedance input stage.

Abstract: The present invention relates generally to an operational amplifier. In one embodiment, the present invention is an operational amplifier including a transimpedance input stage, the transimpedance input stage including a first stage connected to a first resistor and a second resistor, and an output stage connected to the transimpedance input stage.